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NOIX3SN012KB-LTI1

Onsemi

NOIX3SN012KB-LTI1 by Onsemi

NOIX3SN012KB-LTI1 by Onsemi features 3.2x3.2 um pixel size, 32.4 MHz master clock, and 4096 horizontal pixels. Ideal for image sensing applications with a spectral response of 300-1000 nm and I2C/SPI digital output interface.

Median Price

$264.275

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4 parts In-Stock

1+ parts

$239.240

100+ parts

$224.890

1k+ parts

$210.530

10k+ parts

-

4

$239.240

$224.890

$210.530

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DigiKey

USA . 4 parts In-Stock

1+ parts

$289.310

100+ parts

$256.070

1k+ parts

-

10k+ parts

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4

$289.310

$256.070

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Verical

USA . 4 parts In-Stock

1+ parts

-

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4

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Distributors (In-Stock)

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Digiode

USA . 536 parts In-Stock

1+ parts

$388.075

100+ parts

-

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536

$388.075

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Vyrian

USA . 6,130 parts In-Stock

1+ parts

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6,130

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,358 parts In-Stock

1+ parts

$367.650

100+ parts

-

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2,358

$367.650

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Corohmni

South Africa . 92 parts In-Stock

1+ parts

$408.500

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-

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92

$408.500

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TANS Electronics

Latvia . 8,195 parts In-Stock

1+ parts

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8,195

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Problanco Electronics

Mexico . 4,691 parts In-Stock

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4,691

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SupplyDigital Components

Austria . 4,621 parts In-Stock

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4,621

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Kulean Microsystems

USA . 4,143 parts In-Stock

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4,143

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UHIMA Technologies

Türkiye . 951 parts In-Stock

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951

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Capture every detail in stunning clarity with the NOIX3SN012KB-LTI1 image sensor by Onsemi. As a leader in imaging technology, Onsemi ensures top-notch quality and reliability in every product they create. This sensor is perfect for a wide range of applications, from surveillance to medical imaging. Unlock endless possibilities with its high resolution, wide operating temperature range, and easy integration with digital interfaces. Experience exceptional performance and value with the NOIX3SN012KB-LTI1, where innovation meets excellence.

Feature Benefit Bullets

Pixel Size (um) 3.2X3.2

Small pixel size allows for high resolution images to be captured, making this image sensor suitable for applications requiring detailed imagery.

Maximum Supply Voltage 1.3 V

Low maximum supply voltage helps in reducing power consumption and heat generation, making the image sensor more energy efficient.

Master Clock 32.4 MHz

High master clock frequency enables fast image processing and data transfer, ensuring quick and efficient operation of the image sensor.

Body Width 19.9 inch

Compact body width makes this image sensor suitable for applications where space is limited, allowing for easy integration into various devices.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption, high quality images, and fast readout speeds, making this image sensor a reliable choice for imaging applications.

Package Shape or Style RECTANGULAR

Rectangular package shape allows for easy placement and mounting of the image sensor on circuit boards, ensuring convenient installation.

Minimum Supply Voltage 1.1 V

Low minimum supply voltage ensures stable operation of the image sensor even under low power conditions, making it suitable for battery-powered devices.

Maximum Operating Temperature 85 °C

High maximum operating temperature range allows the image sensor to be used in various environments without the risk of overheating, ensuring reliable performance.

Horizontal Pixel 4096

High horizontal pixel count enables high-resolution images to be captured, providing sharp and detailed visuals for imaging applications.

Output Range 0.4-1.5V

Wide output range provides flexibility in output signal levels, allowing for compatibility with different circuit designs and signal processing requirements.

Output Type DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and data transmission, ensuring accurate and reliable communication of image data.

Minimum Operating Temperature -40 °C

Low minimum operating temperature range allows the image sensor to remain operational even in cold environments, making it suitable for outdoor or industrial applications.

Maximum Operating Current 240 mA

Low maximum operating current helps in reducing power consumption and prolonging the lifespan of the image sensor, making it a cost-effective choice for long-term use.

Housing CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed co-fired housing provides durability and protection to the image sensor components, ensuring reliable operation in harsh conditions.

Dynamic Range 68 dB

High dynamic range allows the image sensor to capture a wide range of light intensities, ensuring accurate and detailed image reproduction in high-contrast scenes.

Vertical Pixel 3072

High vertical pixel count contributes to the overall resolution of the image sensor, allowing for detailed images to be captured in both horizontal and vertical directions.

Body Length/Diameter 20.88 mm

Compact body length/diameter makes the image sensor space-efficient and easy to integrate into various devices, providing flexibility in design and installation.

Spectral Response (nm) 300-1000

Wide spectral response range allows the image sensor to capture a broad range of wavelengths, making it suitable for applications requiring diverse imaging capabilities.

Termination Type SOLDER

Solder termination ensures secure and reliable connections between the image sensor and circuit board, preventing signal loss or disconnections during operation.

Output Interface Type I2C/SPI INTERFACE

I2C/SPI interface provides a versatile and standardized method for data communication, allowing the image sensor to easily interface with a wide range of microcontrollers and devices.

Frame Rate 28 fps

High frame rate enables fast and smooth video capture, making the image sensor suitable for applications requiring real-time imaging or motion analysis.

Array Type FRAME

Frame array type allows for simultaneous capture of multiple image frames, enabling efficient processing and analysis of image data.

Mounting Feature SURFACE MOUNT

Surface mounting feature simplifies the installation and integration of the image sensor onto circuit boards, ensuring secure placement and reliable operation.

Technical Specifications

Image Sensors NOIX3SN012KB-LTI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

28 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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