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NOIP3SE5000A-QDI

Onsemi

NOIP3SE5000A-QDI by Onsemi

NOIP3SE5000A-QDI by Onsemi is an image sensor with 4.8x4.8 um pixel size, 360 MHz master clock, and 2592 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging at a frame rate of 45 fps.

Median Price

$207.955

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4 parts In-Stock

1+ parts

$188.400

100+ parts

$177.100

1k+ parts

$165.790

10k+ parts

-

4

$188.400

$177.100

$165.790

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DigiKey

USA . 4 parts In-Stock

1+ parts

-

100+ parts

$227.510

1k+ parts

$227.510

10k+ parts

$227.510

4

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$227.510

$227.510

$227.510

Verical

USA . 4 parts In-Stock

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-

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4

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Distributors (In-Stock)

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Digiode

USA . 713 parts In-Stock

1+ parts

$207.822

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713

$207.822

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Vyrian

USA . 6,747 parts In-Stock

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6,747

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4 parts In-Stock

1+ parts

$184.520

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-

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4

$184.520

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Corohmni

South Africa . 236 parts In-Stock

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$189.710

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236

$189.710

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Corphita

USA . 2,465 parts In-Stock

1+ parts

$196.884

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2,465

$196.884

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Problanco Electronics

Mexico . 5,452 parts In-Stock

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5,452

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Kulean Microsystems

USA . 4,008 parts In-Stock

1+ parts

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4,008

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 2,780 parts In-Stock

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2,780

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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899

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TANS Electronics

Latvia . 19 parts In-Stock

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Overview

Discover the future of imaging technology with the NOIP3SE5000A-QDI by Onsemi. As a leading manufacturer in image sensors, Onsemi brings unparalleled quality and innovation to the table. Whether you're looking to enhance security systems, improve medical imaging, or upgrade your automotive cameras, this sensor delivers exceptional performance and reliability. With a superior pixel size, wide operating temperature range, and high frame rate, this product offers unmatched value and benefits to customers seeking cutting-edge image sensing solutions. Elevate your projects with the NOIP3SE5000A-QDI and experience the difference today.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Smaller pixel size allows for higher resolution images and better image quality.

Maximum Supply Voltage: 1.9 V

Efficient power usage and compatibility with various systems.

Master Clock: 360 MHz

High clock speed allows for fast data processing and high frame rates.

Body Width: 19 inch

Compact size for easy integration into different devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides low power consumption and high image quality.

Minimum Operating Temperature: -40 °C

Wide temperature range for usage in various environments.

Dynamic Range: 60 dB

High dynamic range for capturing details in both bright and dark areas of an image.

Spectral Response (nm): 400-1000

Wide spectral response range for capturing a broad range of colors and wavelengths.

Frame Rate: 45 fps

High frame rate for capturing fast-moving scenes or objects.

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity for capturing low-light images with minimal noise.

Technical Specifications

Image Sensors NOIP3SE5000A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

45 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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