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KAI-47052-AXA-JD-B1

Onsemi

KAI-47052-AXA-JD-B1 by Onsemi

KAI-47052-AXA-JD-B1 by Onsemi is an image sensor with 5.5x5.5 um pixel size, 40 MHz master clock, and 15.5V max supply voltage. Ideal for applications requiring high-resolution imaging in industrial cameras or machine vision systems due to its 8856 (H) x 5280 (V) pixel resolution and 66 dB dynamic range at temperatures ranging from -50 °C to 70°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,084 parts In-Stock

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Digiode

USA . 435 parts In-Stock

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435

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Distributors (Availability)

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AZTECH Wire

Italy . 915 parts In-Stock

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$8.430

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915

$8.430

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TANS Electronics

Latvia . 6,046 parts In-Stock

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6,046

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SupplyDigital Components

Austria . 5,909 parts In-Stock

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Problanco Electronics

Mexico . 1,605 parts In-Stock

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Corphita

USA . 1,239 parts In-Stock

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Kulean Microsystems

USA . 1,141 parts In-Stock

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UHIMA Technologies

Türkiye . 400 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-47052-AXA-JD-B1 by Onsemi. As a leader in manufacturing top-notch image sensors, Onsemi delivers unrivaled quality and reliability. Whether you're in the medical, automotive, or industrial field, this innovative product offers exceptional value, providing high-definition imaging with a wide dynamic range. Say goodbye to blurry images and hello to crystal-clear visuals with the KAI-47052-AXA-JD-B1. Experience the difference today!

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

Smaller pixel size allows for higher resolution images and better image quality.

Maximum Supply Voltage 15.5 V

Higher supply voltage provides more power to the sensor for better performance and functionality.

Master Clock 40 MHz

High master clock frequency enables faster data processing and image capture.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality imaging capabilities, making them a reliable choice.

Dynamic Range 66 dB

Wide dynamic range allows the sensor to capture details in both bright and dark areas of an image.

Frame Rate 7 fps

Decent frame rate ensures smooth video recording and real-time image capture.

Technical Specifications

Image Sensors KAI-47052-AXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 38 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.45 inch

Body Height:

3.25 mm

Body Length/Diameter:

69.96 mm

Dynamic Range:

66 dB

Frame Rate:

7 fps

Horizontal Pixel:

8856

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5280

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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