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KAI-43140-AXA-JD-B1

Onsemi

KAI-43140-AXA-JD-B1 by Onsemi

KAI-43140-AXA-JD-B1 by Onsemi is an image sensor with 4.5x4.5 um pixel size, 8040 horizontal pixels, and 5360 vertical pixels. It operates at a max supply voltage of 15.5 V and has a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

$37,938.230

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 200 parts In-Stock

1+ parts

$37,938.230

100+ parts

$26,779.930

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200

$37,938.230

$26,779.930

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Verical

USA . 200 parts In-Stock

1+ parts

$37,938.230

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$26,779.930

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200

$37,938.230

$26,779.930

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Distributors (In-Stock)

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Digiode

USA . 1,585 parts In-Stock

1+ parts

$36,041.318

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1,585

$36,041.318

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Vyrian

USA . 6,441 parts In-Stock

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6,441

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Distributors (Availability)

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AZTECH Wire

Italy . 971 parts In-Stock

1+ parts

$8.910

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-

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971

$8.910

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Corphita

USA . 1,820 parts In-Stock

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$34,144.407

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1,820

$34,144.407

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Corohmni

South Africa . 100 parts In-Stock

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$37,938.230

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100

$37,938.230

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TANS Electronics

Latvia . 5,254 parts In-Stock

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5,254

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Kulean Microsystems

USA . 5,091 parts In-Stock

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5,091

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SupplyDigital Components

Austria . 4,333 parts In-Stock

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4,333

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Problanco Electronics

Mexico . 1,680 parts In-Stock

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1,680

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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733

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Overview

Elevate your imaging experience with the KAI-43140-AXA-JD-B1 image sensor by Onsemi. Designed with precision and quality in mind, this cutting-edge CCD sensor offers unparalleled performance in a compact package. Ideal for a wide range of applications, from medical imaging to industrial inspection, this sensor delivers crisp, high-resolution images with a dynamic range of 60 dB. Trust Onsemi's expertise and innovation to bring you the best in image sensor technology. Experience the difference with the KAI-43140-AXA-JD-B1.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Small pixel size allows for high resolution images to be captured, making this sensor suitable for applications requiring detailed image capture.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for increased sensitivity and performance, making this sensor suitable for low-light imaging applications.

Body Width: 45.34 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture and low noise performance, making this sensor suitable for applications requiring high image quality.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides ease of mounting and integration into systems.

Maximum Operating Temperature: 70 °C

High operating temperature range allows for versatility in usage environments.

Output Type: CURRENT OUTPUT

Current output simplifies interface with other components and systems.

Dynamic Range: 60 dB

High dynamic range enables the sensor to capture both bright and dark elements in a scene accurately.

Data Rate: 60 Mbps

Fast data rate allows for quick transfer of image data, suitable for real-time imaging applications.

Technical Specifications

Image Sensors KAI-43140-AXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAVE OUTPUT SENSTIVITY OF 42 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Data Rate:

60 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

8040

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/2.9

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5360

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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