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KAI-08670-FXA-JD-B1

Onsemi

KAI-08670-FXA-JD-B1 by Onsemi

Onsemi's KAI-08670-FXA-JD-B1 image sensor features 7.4x7.4 um pixel size, 40 MHz master clock, and 82 dB dynamic range. Ideal for applications requiring high-quality imaging with a resolution of 3600x2400 pixels, such as industrial machine vision systems or scientific cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,978 parts In-Stock

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Digiode

USA . 1,227 parts In-Stock

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AZTECH Wire

Italy . 429 parts In-Stock

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SupplyDigital Components

Austria . 8,109 parts In-Stock

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Problanco Electronics

Mexico . 7,668 parts In-Stock

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TANS Electronics

Latvia . 2,010 parts In-Stock

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Kulean Microsystems

USA . 624 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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Corohmni

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Overview

Experience the next level of imaging with the KAI-08670-FXA-JD-B1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional quality and reliability in their image sensors. This sensor, with its high pixel density and wide dynamic range, is perfect for applications such as surveillance systems, industrial inspection, and medical imaging. Trust Onsemi to provide cutting-edge technology that exceeds expectations, delivering unparalleled value and performance to customers.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 15.5 V

Provides sufficient power for optimal performance of the image sensor.

Master Clock: 40 MHz

Fast master clock speed enables quick and efficient data processing.

Body Width: 45.34 inch

Compact body width makes it easy to integrate this image sensor into various electronic devices.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture and excellent light sensitivity.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy placement and alignment within a device.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures energy efficiency and extends the product's lifespan.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows this image sensor to be used in various environments.

Horizontal Pixel: 3600

High horizontal pixel count contributes to the sharpness and clarity of images captured.

Minimum Operating Temperature: -50 °C

Can withstand extremely low temperatures, making it suitable for a range of applications.

Maximum Operating Current: 11 mA

Low operating current consumption helps to conserve power and improve overall efficiency.

Dynamic Range: 82 dB

Wide dynamic range allows for the capture of both bright and dark areas in a scene with detail.

Vertical Pixel: 2400

High vertical pixel count contributes to the overall image quality and detail captured.

Body Length/Diameter: 47.24 mm

Compact body length makes it easy to fit this image sensor in a variety of devices.

Optical Format (inch): 1.26

Common optical format size ensures compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the image sensor.

Frame Rate: 12 fps

Decent frame rate allows for smooth video recording and fast image capture.

Array Type: INTERLINE

Interline array type allows for faster readout speeds and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides a secure and stable attachment for the image sensor.

Technical Specifications

Image Sensors KAI-08670-FXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 33 AND 9.7 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.3 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

82 dB

Frame Rate:

12 fps

Horizontal Pixel:

3600

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.26

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2400

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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