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KAI-04022-FBA-CR-AE

Onsemi

KAI-04022-FBA-CR-AE by Onsemi

The Onsemi KAI-04022-FBA-CR-AE is a 2048x2048 CCD image sensor with 7.4um pixel size, offering a dynamic range of 72dB. It operates b/w -50 to 70 °C and supports supply voltages from 14.5V to 15.5V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,417 parts In-Stock

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Digiode

USA . 1,180 parts In-Stock

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AZTECH Wire

Italy . 586 parts In-Stock

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$9.420

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SupplyDigital Components

Austria . 8,214 parts In-Stock

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Problanco Electronics

Mexico . 7,587 parts In-Stock

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Kulean Microsystems

USA . 1,358 parts In-Stock

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Corphita

USA . 1,274 parts In-Stock

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TANS Electronics

Latvia . 1,189 parts In-Stock

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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Corohmni

South Africa . 444 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the KAI-04022-FBA-CR-AE by Onsemi. As a leading manufacturer in image sensor technology, Onsemi delivers unparalleled quality and reliability. This advanced CCD image sensor boasts a high pixel count and wide dynamic range, making it perfect for applications in industrial machines, scientific equipment, and medical devices. Elevate your project with the precision and performance that only Onsemi can provide. Choose the KAI-04022-FBA-CR-AE for crystal-clear images every time.

Feature Benefit Bullets

Pixel Size (um) 7.4X7.4

Smaller pixel size allows for higher resolution images and better image quality.

Maximum Supply Voltage 15.5 V

Provides a wide voltage range for flexibility in power supply options.

Body Width 25.65 inch

Compact size makes it suitable for integration into various devices and systems.

Sensors or Transducers Type IMAGE SENSOR,CCD

Uses CCD technology which is known for high-quality imaging and low noise levels.

Body Height 4.95 mm

Low profile design for easy integration and space-saving.

Package Shape or Style RECTANGULAR

Standard rectangular shape for compatibility with existing mounting systems.

Minimum Supply Voltage 14.5 V

Low minimum supply voltage for energy efficiency and battery-operated devices.

Maximum Operating Temperature 70 °C

Wide temperature range allows for operation in various environments.

Horizontal Pixel 2048

High horizontal pixel count for detailed and sharp images.

Minimum Operating Temperature -50 °C

Operates in extreme cold temperatures for versatility in usage.

Housing CERAMIC

Durable ceramic housing for protection and longevity of the sensor.

Dynamic Range 72 dB

High dynamic range for capturing both bright and dark areas in a scene.

Vertical Pixel 2048

High vertical pixel count for detailed and high-resolution images.

Body Length/Diameter 35.56 mm

Optimal size for accommodating the sensor and its components.

Optical Format (inch) 4/3

Standard optical format for compatibility with various lenses.

Termination Type SOLDER

Secure and reliable solder termination for stable connections.

Array Type INTERLINE

Interline array design for improved image quality and reduced lag.

Mounting Feature THROUGH HOLE MOUNT

Easy through-hole mounting for secure and stable installation.

Technical Specifications

Image Sensors KAI-04022-FBA-CR-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.65 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Dynamic Range:

72 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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