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KAF-6303-AAA-CD-B2

Onsemi

KAF-6303-AAA-CD-B2 by Onsemi

The Onsemi KAF-6303-AAA-CD-B2 is a CCD image sensor with 3072x2048 pixels, 9x9 um pixel size, and 76 dB dynamic range. It operates b/w -60 to 60 °C and has a spectral response of 400-1100 nm. Ideal for high-resolution imaging applications requiring precise color reproduction.

Median Price

$9,668.130

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 6 parts In-Stock

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Verical

USA . 6 parts In-Stock

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$9,668.130

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6

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Distributors (In-Stock)

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Digiode

USA . 1,880 parts In-Stock

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$9,184.724

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Vyrian

USA . 2,962 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,771 parts In-Stock

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$8,701.317

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Corohmni

South Africa . 354 parts In-Stock

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Problanco Electronics

Mexico . 6,217 parts In-Stock

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Kulean Microsystems

USA . 5,645 parts In-Stock

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SupplyDigital Components

Austria . 5,116 parts In-Stock

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TANS Electronics

Latvia . 4,194 parts In-Stock

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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Overview

Experience unparalleled image quality and precision with the KAF-6303-AAA-CD-B2 by Onsemi. As a leading manufacturer in the industry, Onsemi's Image Sensors are known for their superior performance and reliability. Ideal for a wide range of applications, this CCD Image Sensor offers exceptional value, delivering crystal-clear images with a dynamic range of 76 dB. Whether you're in the medical field, security industry, or involved in scientific research, the KAF-6303-AAA-CD-B2 is the perfect solution to meet your imaging needs. Unlock endless possibilities and elevate your projects with this cutting-edge technology from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 9X9

Small pixel size allows for high resolution images to be captured with clarity and detail.

Maximum Supply Voltage: 15.5 V

Wide voltage range ensures compatibility with various power sources and stable operation.

Body Width: 22.1 inch

Compact body design makes it easy to integrate into different imaging systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensor technology provides high-quality image capturing capabilities for professional applications.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy mounting and integration into electronic devices or systems.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures efficient power usage and longer battery life.

Maximum Operating Temperature: 60 °C

Wide temperature range allows for operation in various environments without overheating.

Horizontal Pixel: 3072

High number of horizontal pixels results in high-definition images with crisp details.

Minimum Operating Temperature: -60 °C

Operates in extreme cold conditions without compromising performance or image quality.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensitive image sensor components.

Dynamic Range: 76 dB

Wide dynamic range ensures accurate representation of bright and dark areas in the captured images.

Vertical Pixel: 2048

High number of vertical pixels allows for capturing detailed images with excellent vertical resolution.

Body Length/Diameter: 38.1 mm

Compact body size makes it suitable for integration into compact devices or systems.

Spectral Response (nm): 400-1100

Broad spectral response range ensures capturing a wide range of colors and details in the images.

Data Rate: 10 Mbps

High data rate enables fast and efficient transfer of image data for real-time processing or storage.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for seamless integration into electronic circuits.

Array Type: FULL FRAME

Full frame array type ensures that the entire image is captured without any cropping or distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for secure and stable installation in various electronic devices or systems.

Technical Specifications

Image Sensors KAF-6303-AAA-CD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

22.1 inch

Body Length/Diameter:

38.1 mm

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

3072

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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