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KAF-6303-AAA-CD-AE

Onsemi

KAF-6303-AAA-CD-AE by Onsemi

The Onsemi KAF-6303-AAA-CD-AE is a CCD image sensor with 3072x2048 pixels, 9x9 um pixel size, and 76 dB dynamic range. It operates b/w -60 to 60 °C and has a spectral response of 400-1100 nm. Ideal for high-resolution imaging applications requiring precise color reproduction.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,498 parts In-Stock

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Vyrian

USA . 292 parts In-Stock

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SupplyDigital Components

Austria . 3,212 parts In-Stock

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Problanco Electronics

Mexico . 2,397 parts In-Stock

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Kulean Microsystems

USA . 2,372 parts In-Stock

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Corphita

USA . 1,410 parts In-Stock

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TANS Electronics

Latvia . 1,020 parts In-Stock

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UHIMA Technologies

Türkiye . 534 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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Overview

Discover the unparalleled quality and performance of the KAF-6303-AAA-CD-AE image sensor by Onsemi. With a wide range of applications in various industries, this CCD sensor offers exceptional value and benefits to customers looking for reliable imaging solutions. Benefit from the advanced technology and expertise of Onsemi, a trusted manufacturer known for delivering top-notch products that meet the highest standards. Upgrade your imaging system with the KAF-6303-AAA-CD-AE and experience the difference in quality and performance.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images and better low light performance.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for versatility in power options and ensures stable performance.

Body Width: 22.1 inch

Larger body width provides more room for additional features and components, making it a versatile choice.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture and low noise, making them a reliable choice for imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easier integration into various systems and devices.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures energy efficiency and helps in reducing power consumption.

Maximum Operating Temperature: 60 °C

High maximum operating temperature allows for reliable performance even in challenging environmental conditions.

Horizontal Pixel: 3072

High horizontal pixel count enables detailed and high-resolution image capture.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature ensures the sensor can function in extreme cold conditions without any issues.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, making it suitable for demanding industrial applications.

Dynamic Range: 76 dB

High dynamic range allows for better contrast and detail in captured images.

Vertical Pixel: 2048

High vertical pixel count ensures precise image composition and quality.

Body Length/Diameter: 38.1 mm

Compact body size allows for easy integration into a variety of devices and systems.

Spectral Response (nm): 400-1100

Wide spectral response range enables the sensor to capture a broader range of colors and wavelengths, making it versatile for different applications.

Data Rate: 10 Mbps

High data rate allows for fast and efficient data transfer, ensuring real-time image capture and processing.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for seamless integration into electronic circuits.

Array Type: FULL FRAME

Full-frame array type provides maximum image coverage and accuracy, making it ideal for high-end imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers strong mechanical support and stability for the sensor, ensuring precise image capture even in dynamic environments.

Technical Specifications

Image Sensors KAF-6303-AAA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

22.1 inch

Body Length/Diameter:

38.1 mm

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

3072

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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