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KAF-6303-AAA-CP-B2

Onsemi

KAF-6303-AAA-CP-B2 by Onsemi

The Onsemi KAF-6303-AAA-CP-B2 is a CCD image sensor with 3072x2048 pixels, 9x9 um pixel size, and 76 dB dynamic range. It operates b/w -60 to 60 °C and has a spectral response of 400-1100 nm. Ideal for high-resolution imaging applications in industrial and scientific fields.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,231 parts In-Stock

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SupplyDigital Components

Austria . 6,913 parts In-Stock

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TANS Electronics

Latvia . 5,928 parts In-Stock

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Problanco Electronics

Mexico . 4,723 parts In-Stock

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Corphita

USA . 917 parts In-Stock

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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Authorized Procurement Solutions

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Corohmni

South Africa . 312 parts In-Stock

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Kulean Microsystems

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Overview

Elevate your imaging game with the KAF-6303-AAA-CP-B2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality image sensors that guarantee superior performance and reliability. The KAF-6303-AAA-CP-B2 is the perfect solution for a wide range of applications, providing crystal-clear images and unmatched precision. Experience the value of cutting-edge technology and unlock endless possibilities with this innovative product. Choose Onsemi for unparalleled quality, innovation, and customer satisfaction.

Feature Benefit Bullets

Pixel Size (um): 9X9

This small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and ensures stable operation.

Body Width: 22.1 inch

The compact body width makes it suitable for integration into various devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The combination of image sensor and CCD technology ensures high-quality, accurate image capture.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into different systems.

Minimum Supply Voltage: 14.5 V

Having a low minimum supply voltage helps in reducing power consumption and ensuring efficient operation.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature, this sensor can withstand harsh environmental conditions.

Horizontal Pixel: 3072

A high number of horizontal pixels results in detailed and sharp images with a wide field of view.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature allows for reliable performance even in extreme cold conditions.

Housing: CERAMIC

The ceramic housing provides durability and protection to the sensor, making it suitable for long-term use.

Dynamic Range: 76 dB

A wide dynamic range allows the sensor to capture both bright and dark areas in an image accurately.

Vertical Pixel: 2048

The vertical pixel count contributes to the overall resolution and quality of the captured images.

Body Length/Diameter: 38.1 mm

The compact body length/diameter makes it easy to fit into space-constrained applications.

Spectral Response (nm): 400-1100

The wide spectral response range allows for capturing images in various lighting conditions and environments.

Data Rate: 10 Mbps

A high data rate ensures fast and efficient transfer of image data for real-time applications.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection, ensuring stable performance of the sensor.

Array Type: FULL FRAME

A full-frame array type maximizes the image sensor's field of view, making it ideal for applications requiring wide coverage.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting facilitates easy and secure installation of the sensor onto circuit boards or other surfaces.

Technical Specifications

Image Sensors KAF-6303-AAA-CP-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

22.1 inch

Body Length/Diameter:

38.1 mm

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

3072

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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