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KAF-6303-AAA-CP-AE

Onsemi

KAF-6303-AAA-CP-AE by Onsemi

The Onsemi KAF-6303-AAA-CP-AE is a CCD image sensor with 3072x2048 pixels, 9x9 um pixel size, and 76 dB dynamic range. It operates b/w -60 to 60 °C and has a spectral response of 400-1100 nm. Ideal for high-resolution imaging applications requiring precise color reproduction.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,497 parts In-Stock

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Digiode

USA . 234 parts In-Stock

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Problanco Electronics

Mexico . 7,879 parts In-Stock

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Kulean Microsystems

USA . 4,300 parts In-Stock

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SupplyDigital Components

Austria . 3,614 parts In-Stock

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TANS Electronics

Latvia . 3,229 parts In-Stock

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Corphita

USA . 1,706 parts In-Stock

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UHIMA Technologies

Türkiye . 821 parts In-Stock

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Corohmni

South Africa . 267 parts In-Stock

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Overview

Capture the essence of every moment with the KAF-6303-AAA-CP-AE by Onsemi, a top-tier manufacturer renowned for its cutting-edge image sensors. Designed to deliver unparalleled quality and precision, this CCD sensor boasts a wide range of applications in various industries. Whether you're a photography enthusiast or a professional in need of high-performance imaging solutions, this product offers unmatched value, exceptional benefits, and undeniable advantages that will elevate your projects to new heights. Choose excellence with Onsemi's KAF-6303-AAA-CP-AE and experience the difference in clarity and detail like never before.

Feature Benefit Bullets

Pixel Size (um): 9X9

This small pixel size allows for high-resolution images to be captured with great detail.

Maximum Supply Voltage: 15.5 V

Having a high maximum supply voltage ensures stable and reliable performance under various operating conditions.

Body Width: 22.1 inch

The compact body width of this image sensor makes it suitable for integration into a wide range of devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor ensures high-quality image capture with low noise and excellent light sensitivity.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy integration and mounting within different systems and devices.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps in reducing power consumption while maintaining operational efficiency.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions without compromising performance.

Horizontal Pixel: 3072

The high horizontal pixel count allows for detailed and high-resolution image capture for precise imaging applications.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments.

Housing: CERAMIC

The ceramic housing provides durability and protection for the image sensor, making it suitable for long-term use.

Dynamic Range: 76 dB

The high dynamic range of 76 dB allows for capturing both dark and bright areas in an image accurately.

Vertical Pixel: 2048

The vertical pixel count contributes to the overall image resolution and clarity of the captured images.

Body Length/Diameter: 38.1 mm

The compact body size of the image sensor makes it easy to integrate into various devices and systems.

Spectral Response (nm): 400-1100

The wide spectral response range enables the sensor to capture images across a broad range of wavelengths for versatile applications.

Data Rate: 10 Mbps

With a high data rate of 10 Mbps, this sensor can transmit image data quickly and efficiently for real-time imaging applications.

Termination Type: SOLDER

The solder termination type ensures secure connections and reliable performance in diverse operating environments.

Array Type: FULL FRAME

The full-frame array type allows for capturing complete images without cropping or distortion, ideal for high-quality imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure and stable mounting for the image sensor.

Technical Specifications

Image Sensors KAF-6303-AAA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

22.1 inch

Body Length/Diameter:

38.1 mm

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

3072

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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