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AR0147ATSC00XUEG0-DPBR

Onsemi

AR0147ATSC00XUEG0-DPBR by Onsemi

Onsemi's AR0147ATSC00XUEG0-DPBR is a 3x3 um CMOS image sensor with 1344H x 968V pixels, offering a dynamic range of 140 dB. It operates at temperatures ranging from -40 to 110 °C and has a max supply voltage of 1.26 V. Ideal for applications requiring high-resolution imaging and digital output interface with a frame rate of 60 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,463 parts In-Stock

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Digiode

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Native Components

USA . 43 parts In-Stock

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$0.040

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$0.038

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AZTECH Wire

Italy . 512 parts In-Stock

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$18.710

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 7,812 parts In-Stock

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Problanco Electronics

Mexico . 5,865 parts In-Stock

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SupplyDigital Components

Austria . 5,179 parts In-Stock

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TANS Electronics

Latvia . 4,990 parts In-Stock

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Corphita

USA . 1,877 parts In-Stock

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Northwest PG Solutions

USA . 1,569 parts In-Stock

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the AR0147ATSC00XUEG0-DPBR by Onsemi. As a leader in image sensor technology, Onsemi ensures top-notch quality and reliability in all their products. Perfect for applications such as surveillance systems, automotive cameras, and industrial inspection, this image sensor offers unbeatable value with its exceptional dynamic range and high sensitivity. Experience the difference with Onsemi and see your visions come to life with unparalleled clarity and precision.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.26 V

Low supply voltage helps in reducing power consumption and heat generation.

Master Clock: 50 MHz

High master clock speed enables fast data processing and capture of images.

Body Width: 7 inch

Compact body width makes it suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high sensitivity and low noise performance.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies integration and processing of image data.

Maximum Operating Temperature: 110 °C

Wide operating temperature range ensures reliability in various environments.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme conditions.

Frame Rate: 60 fps

High frame rate enables smooth video recording and fast image capture.

Technical Specifications

Image Sensors AR0147ATSC00XUEG0-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

7 inch

Body Height:

1.5 mm

Body Length/Diameter:

8 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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