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AR0134CSSC00SUEA0-DRBR

Onsemi

AR0134CSSC00SUEA0-DRBR by Onsemi

Onsemi's AR0134CSSC00SUEA0-DRBR is a 1/3-inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. It operates at -30 to 70 °C, with a max supply voltage of 1.95V and a data rate of 700Mbps. Ideal for applications requiring high-resolution imaging in varying temperature conditions.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,187 parts In-Stock

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Digiode

USA . 2,471 parts In-Stock

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Native Components

USA . 612 parts In-Stock

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$0.720

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Northwest PG Solutions

USA . 423 parts In-Stock

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$0.792

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AZTECH Wire

Italy . 1,085 parts In-Stock

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SupplyDigital Components

Austria . 6,059 parts In-Stock

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Problanco Electronics

Mexico . 5,856 parts In-Stock

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Kulean Microsystems

USA . 5,644 parts In-Stock

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Corphita

USA . 1,320 parts In-Stock

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UHIMA Technologies

Türkiye . 541 parts In-Stock

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Corohmni

South Africa . 389 parts In-Stock

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TANS Electronics

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Overview

Experience the unmatched quality and precision of Onsemi's AR0134CSSC00SUEA0-DRBR Image Sensor. As a leading manufacturer in the industry, Onsemi delivers top-notch technology for a wide range of applications. This innovative sensor offers exceptional value with its high performance capabilities, ensuring superior image quality and reliability. Whether you're in need of advanced imaging solutions for automotive, security, or consumer electronics, the AR0134CSSC00SUEA0-DRBR is the perfect choice to elevate your products to the next level. Trust Onsemi to provide the cutting-edge technology you need to stand out in the competitive market.

Feature Benefit Bullets

Pixel Size (um): 3.75

Having a small pixel size of 3.75 um allows for high-resolution images to be captured, making this Image Sensor suitable for applications where detailed images are required.

Maximum Supply Voltage: 1.95 V

With a high maximum supply voltage of 1.95 V, this Image Sensor can operate efficiently without the risk of voltage fluctuations affecting its performance.

Master Clock: 50 MHz

The high master clock frequency of 50 MHz ensures fast data processing, enabling quick capture and transfer of images.

Minimum Operating Temperature: -30 °C

With a low minimum operating temperature of -30 °C, this Image Sensor can function effectively even in cold environments.

Frame Rate: 60 fps

The high frame rate of 60 frames per second allows for smooth and clear video recording, making this Image Sensor ideal for applications requiring real-time imaging.

Technical Specifications

Image Sensors AR0134CSSC00SUEA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

SINGLE FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Data Rate:

700 Mbps

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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