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AR0132AT6R00XPEA0-DRBR1

Onsemi

AR0132AT6R00XPEA0-DRBR1 by Onsemi

The Onsemi AR0132AT6R00XPEA0-DRBR1 image sensor features 3.75um pixel size, 50MHz master clock, and 115dB dynamic range. Ideal for applications requiring a high-resolution digital voltage output interface, such as surveillance cameras and automotive vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

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Vyrian

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Digiode

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Native Components

USA . 429 parts In-Stock

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Northwest PG Solutions

USA . 607 parts In-Stock

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AZTECH Wire

Italy . 603 parts In-Stock

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Kulean Microsystems

USA . 5,231 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 4,148 parts In-Stock

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Problanco Electronics

Mexico . 3,651 parts In-Stock

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UHIMA Technologies

Türkiye . 654 parts In-Stock

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Corphita

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Corohmni

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Overview

Capture every moment with the AR0132AT6R00XPEA0-DRBR1 by Onsemi, a cutting-edge image sensor designed to deliver unparalleled quality and performance. As a leading manufacturer in the industry, Onsemi ensures top-notch reliability and innovation in every product they create. Ideal for a wide range of applications, this image sensor offers customers exceptional value, superior benefits, and countless advantages. Elevate your projects and experiences with the AR0132AT6R00XPEA0-DRBR1 and unlock a world of possibilities in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images and better low light performance.

Maximum Supply Voltage: 1.95 V

Higher supply voltage allows for better signal-to-noise ratio and improved overall performance.

Master Clock: 50 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 9 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high performance, making them suitable for a wide range of applications.

Body Height: 1.4 mm

Slim body height enables the sensor to be mounted in tight spaces without compromising performance.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 105 °C

Wide operating temperature range ensures the sensor can function in various environments without degradation in performance.

Horizontal Pixel: 1280

Higher horizontal pixel count results in detailed and sharp images.

Output Range: 0.40-1.50V

Wide output range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data transmission and processing for easier integration into digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the sensor can function in extreme cold conditions.

Maximum Operating Current: 130 mA

Low operating current helps in reducing power consumption and heat generation.

Dynamic Range: 115 dB

High dynamic range allows the sensor to capture both bright and dark scenes accurately.

Vertical Pixel: 960

Moderate vertical pixel count provides good resolution for various imaging applications.

Body Length/Diameter: 9 mm

Compact body length allows for versatility in mounting options.

Optical Format (inch): 1/3

Standard optical format ensures compatibility with common lenses and optics.

Termination Type: SOLDER

Secure solder termination ensures reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

Simple 2-wire interface for easy connectivity with other devices.

Frame Rate: 60 fps

High frame rate enables smooth video recording and fast image capture.

Array Type: LINEAR

Linear array provides uniform pixel distribution for consistent image quality.

Mounting Feature: SURFACE MOUNT

Surface mount option for easy and secure installation on PCBs.

Technical Specifications

Image Sensors AR0132AT6R00XPEA0-DRBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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