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MTFC4GACAANA-4MIT

Micron Technology

MTFC4GACAANA-4MIT by Micron Technology

MTFC4GACAANA-4MIT by Micron Technology is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52MHz clock frequency. Suitable for industrial applications, it offers a memory density of 34.36 Gb and operates in a parallel mode with a supply voltage range of 2.7V to 3.6V.

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Chip Stock

USA . 23,500 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Vyrian

USA . 3,753 parts In-Stock

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Digiode

USA . 1,863 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,098 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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200

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ComSIT Distribution GmbH

Germany . 82 parts In-Stock

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82

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BCID Electronics Ltd.

Israel . 30 parts In-Stock

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30

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Semtec, LLC

USA . 9 parts In-Stock

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Inventory MP

USA . 5 parts In-Stock

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Semi Source

USA . 5 parts In-Stock

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5

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Bristol Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,726 parts In-Stock

1+ parts

$3.770

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$3.770

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AZTECH Wire

Italy . 507 parts In-Stock

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$15.948

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507

$15.948

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Ampacity Inc.

Singapore . 351 parts In-Stock

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$19.000

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351

$19.000

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Corohmni

South Africa . 332 parts In-Stock

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$67.485

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QUARKTWIN TECHNOLOGY LTD

USA . 14,420 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,465 parts In-Stock

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Microchip USA

USA . 3,953 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,633 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,231 parts In-Stock

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Corphita

USA . 1,076 parts In-Stock

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Futuretech Components

Singapore . 639 parts In-Stock

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Infinite Electronics LLP (Excess)

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GreenTree Electronics

Israel . 360 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Legend Electronics Inc. (Excess)

USA . 217 parts In-Stock

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Formix International (Excess)

India . 1 parts In-Stock

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Overview

Upgrade your device's memory with the MTFC4GACAANA-4MIT by Micron Technology! As a leading manufacturer in the industry, Micron Technology delivers top-quality flash memory products that are perfect for a wide range of applications. From smartphones to industrial equipment, this flash memory card offers reliable performance and storage capacity for all your needs. With a nominal supply voltage of 3.3V and a maximum operating temperature of 85°C, you can trust that the MTFC4GACAANA-4MIT will provide the value, benefits, and advantages you're looking for in a memory solution. Unlock the potential of your devices with Micron Technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as package body material makes the product lightweight and durable, ideal for portable devices.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures efficient power consumption and compatibility with a wide range of systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the product can withstand high temperatures, making it suitable for industrial environments.

Memory Density: 34359738368 bit

High memory density of 34359738368 bits allows for storing a large amount of data in a compact form factor, making it efficient for data-intensive applications.

Technical Specifications

Flash Memory MTFC4GACAANA-4MIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4GX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

MLC NAND TYPE

Width:

14 mm

Trade Compliance

MTFC4GACAANA-4MIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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