Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PMWD30UN,518
NXP Semiconductors
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
5 A
.04 ohm
METAL-OXIDE SEMICONDUCTOR
MO-153AB
R-PDSO-G8
2
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
Not Qualified
YES
GULL WING
DUAL
SWITCHING
SILICON
NTZD5110NT5G
Onsemi
NTZD5110NT5G by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include 60V DS breakdown voltage, 0.294A max drain current, and 1.6 ohm max on resistance. With small outline package style & operating temp up to 150 °C, it's suitable for various electronic designs.
60 V
.294 A
1.6 ohm
R-PDSO-F6
e3
1
6
260
.25 W
FET General Purpose Power
TIN
FLAT
30
NTJD3158CT1G
NTJD3158CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has a max drain current of 0.82A and on-resistance of 0.375 ohm. Operating at up to 150 °C, it features a peak reflow temp of 260°C and feedback capacitance of 5pF.
20 V
.82 A
.63 A
.375 ohm
5 pF
R-PDSO-G6
N-CHANNEL AND P-CHANNEL
.35 W
Other Transistors
DMN33D8LDW-13
Diodes Incorporated
DMN33D8LDW-13 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 0.25A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package, suitable for surface mount technology.
HIGH RELIABILITY
.25 A
3 ohm
AEC-Q101
MATTE TIN
DMP58D0SV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
50 V
.16 A
8 ohm
1.4 pF
-55 Cel
P-CHANNEL
.4 W
MIL-STD-202
NTLUD3A260PZTAG
NTLUD3A260PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a square package and operates in ENHANCEMENT MODE for efficient performance.
DRAIN
1.7 A
1.3 A
.2 ohm
S-PDSO-N6
SQUARE
1.3 W
NO LEAD
NTLUD3A260PZTBG
NTLUD3A260PZTBG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a Drain terminal connection and operates in ENHANCEMENT MODE.
SI1034X-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI1034X-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.18A, and max power dissipation of 0.28W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.
LOW THRESHOLD
.18 A
5 ohm
.28 W
FET General Purpose Powers
DMN2215UDM-7
DMN2215UDM-7 by Diodes Inc. is a N-channel FET with 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 2A max drain current, and 0.1 ohm max on resistance. Package style is small outline with Gull Wing terminals, operating up to 150°C.
2 A
.1 ohm
.65 W
Matte Tin (Sn)
2N7002DWL6327
Infineon Technologies
2N7002DWL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A max drain current, and 3ohm on resistance. Ideal for switching applications, it features a small outline package, matte tin finish, and operates in enhancement mode at up to 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.3 A
3 pF
.5 W
BSD840NL6327
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.88 A
.4 ohm
175 Cel
BSD235CL6327
Infineon's BSD235CL6327 is a Small Signal FET with N-Channel and P-Channel types. It features 2 elements with built-in diode, 0.95A max drain current, and 0.35 ohm max on-resistance. Ideal for applications requiring low power dissipation in small outline packages at up to 150°C operating temperature.
.95 A
.35 ohm
BSD235NL6327
Infineon's BSD235NL6327 is a N-CHANNEL FET with 2 elements, built-in diode, and 0.95A max drain current. Ideal for small outline applications requiring 0.35 ohm on-resistance and 20V breakdown voltage. Operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
NTHD4401PT3G
NTHD4401PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 0.155 ohm max drain-source resistance, and 2.1A max drain current. Its small outline package makes it suitable for surface mount designs.
2.1 A
.155 ohm
50 pF
R-PDSO-C8
C BEND
AO4822
Alpha & Omega Semiconductor
AO4822 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, 8A max ID, and 0.019 ohm max RDS(on). The small outline package with gull wing terminals makes it suitable for surface mount designs.
8 A
.019 ohm
115 pF
NOT SPECIFIED
NTGD3149CT1G
NTGD3149CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 2.4A max drain current, and 0.06 ohm on-resistance. Ideal for surface mount designs requiring high performance in a compact square package.
2.4 A
.06 ohm
S-PDSO-G6
Tin (Sn)
NTMD6601NR2G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 2; No. of Terminals: 8;
80 V
2.2 A
1.1 A
.215 ohm
30 pF
1 W
NTHD5904T1
NTHD5904T1 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 3.1A, on-resistance of 0.075 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 150 °C operating temperature, making it suitable for various electronic devices.
3.1 A
.075 ohm
R-XDSO-C8
e0
UNSPECIFIED
235
.6 W
TIN LEAD
NTHD5905T1
NTHD5905T1 by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode for switching applications. Features include 8V DS breakdown voltage, 3A max drain current, and 0.09 ohm max on resistance. Ideal for small outline packages in enhancement mode operation up to 150 °C.
8 V
3 A
.09 ohm
NTTD1P02R2
NTTD1P02R2 by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1.45A max drain current, and 0.16 ohm max on resistance. Ideal for switching applications, it features a small outline package with GULL WING terminals and operates in enhancement mode up to 150 °C.
LOGIC LEVEL COMPATIBLE
1.45 A
.16 ohm
BSD223P
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Element Material: SILICON; Terminal Finish: TIN;
AVALANCHE RATED
.39 A
1.2 ohm
22 pF
2N7002DW-7
2N7002DW-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A max drain current, and 7.5 ohm on-resistance. Ideal for switching applications due to its separate dual-element configuration and built-in diode. Features small outline package style, Gull Wing terminals, and metal-oxide semiconductor technology for efficient performance in enhancement mode operation.
.115 A
7.5 ohm
BSS138DW-7
BSS138DW-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm max on resistance. Ideal for switching applications, it features a small outline package with Gull Wing terminals and operates in enhancement mode up to 150°C.
.2 A
3.5 ohm
8 pF
.2 W
Tin/Lead (Sn/Pb)
10
BSS84DW-7
BSS84DW-7 by Diodes Incorporated is a P-channel FET with 50V breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a small outline package, Gull Wing terminals, and 10 ohm on-resistance. Operating in enhancement mode at up to 150°C, this MOSFET has dual terminals and built-in diode elements.
.13 A
10 ohm
12 pF
.3 W
BSS8402DW-7
BSS8402DW-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 60V DS breakdown voltage, 7.5Ω max RDS(on), and 0.115A max ID. With a dual-terminal configuration in a small outline package, it utilizes MOSFET technology for efficient performance in enhancement mode operation.
NTHD4401PT1G
NTHD4401PT1G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 2.1A max drain current, and 0.155 ohm max on resistance. Operates in enhancement mode with a max temp of 150 °C.
1.1 W
NTHD4401PT1
NTHD4401PT1 by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include: Max Drain Current of 2.1A, Breakdown Voltage of 20V, and Operating Temp up to 150 °C. Its small outline package makes it suitable for surface mount designs.
FDC6000NZ
Fairchild Semiconductor
FDC6000NZ by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 6.5A Max Drain Current, and 0.02 ohm Max RDS(ON). Operates in ENHANCEMENT MODE with a max temp of 150°C, suitable for surface mount with small outline package style.
6.5 A
7.3 A
.02 ohm
e4
1.6 W
NICKEL PALLADIUM GOLD
BSO150N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JEDEC-95 Code: MS-012AA;
7.6 A
.015 ohm
100 pF
MS-012AA
3
1.4 W
NTLJD3181PZTAG
NTLJD3181PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 20V DS Breakdown Voltage, 3.2A ID, and 0.1 ohm RDS(on). This METAL-OXIDE SEMICONDUCTOR FET comes in a SQUARE package with NO LEAD terminals, suitable for ENHANCEMENT MODE operation in various electronic circuits.
3.2 A
NTLUD3191PZTBG
NTLUD3191PZTBG by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 1.1A, and Drain-Source On Resistance of 0.25 ohm. This small outline transistor in PLASTIC/EPOXY package is designed for surface mount with DUAL terminals.
.25 ohm
BSO350N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain-Source On Resistance: .035 ohm; JESD-30 Code: R-PDSO-G8;
.035 ohm
28 pF
SI3993DV-T1-E3
SI3993DV-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 1.8A Drain Current, and 0.133 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
1.8 A
.133 ohm
1.15 W
2N7002V-7
2N7002V-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.28A drain current, and 13.5 ohm on-resistance. Ideal for switching applications due to its small outline package and enhancement mode operation. Suitable for surface mount designs with dual terminals and built-in diode elements.
.28 A
13.5 ohm
.15 W
NTHD5903T1G
NTHD5903T1G by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 2.2A, on-resistance of 0.155 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 2.1W power dissipation at a max temp of 150 °C, making it suitable for various electronic circuits.
2.1 W
STS3C2F100
STMicroelectronics
STS3C2F100 by STMicroelectronics is a dual N/P-channel FET designed for efficient switching applications. It features a max drain current of 3 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
100 V
1.5 A
.145 ohm
2 W
STS8DNH3LL
STS8DNH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
.025 ohm
40
NTHD5904NT1
NTHD5904NT1 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include: Max Drain Current of 3.3A, Min DS Breakdown Voltage of 20V, and Max Power Dissipation of 1.13W. Its small outline package style & max operating temp of 150 °C make it suitable for various electronic designs.
3.3 A
2.5 A
.065 ohm
1.13 W
NTHD5904NT3
NTHD5904NT3 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.3A Drain Current, 0.065 ohm On Resistance. Operates in ENHANCEMENT MODE up to 150 °C, with small outline package & tin lead finish.
STS5DPF20L
STS5DPF20L by STMicroelectronics is a P-channel MOSFET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates in enhancement mode. Its compact SO8 package ensures efficient surface mounting.
STS8C5H30L
STS8C5H30L by STMicroelectronics is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has 30V DS breakdown voltage, 4.2A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Package: SO-8, surface mountable with Gull Wing terminals.
4.2 A
20 pF
SI6544BDQ-T1-E3
Vishay Intertechnology's SI6544BDQ-T1-E3 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Features include 30V DS breakdown voltage, 0.032 ohm RDS(on), and 3.7A ID max current. Ideal for applications requiring high efficiency in compact designs like power management systems.
3.7 A
.032 ohm
20
TT8M2TR
ROHM
ROHM's TT8M2TR is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 2.5A and on-resistance of 0.09 ohm. Operating at up to 150°C, this MOSFET comes in a small outline package with 8 terminals.
R-PDSO-F8
1.25 W
MMDF2P02HDR2G
MMDF2P02HDR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.3A Drain Current. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.
232 pF
MMDF3N04HDR2G
MMDF3N04HDR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 2W and can withstand temperatures up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
40 V
3.4 A
.08 ohm
96 pF
BSS84V-7
BSS84V-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max temp of 150°C. With 0.13A drain current and 10Ω on-resistance, it offers efficient performance in compact designs.
NTZD3152PT5G
NTZD3152PT5G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.43A ID, and 0.9 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor has 2 elements with built-in diode and operates in METAL-OXIDE SEMICONDUCTOR technology.
ESD PROTECTION, LOW THRESHOLD
.43 A
.9 ohm
NTZD3155CT5G
NTZD3155CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance. Ideal for surface mount designs in various electronic systems.
.54 A
.55 ohm
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