Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SI4567DY-T1-E3
Vishay Intertechnology
SI4567DY-T1-E3 by Vishay Intertechnology is a Small Signal FET with N/P-Channel, 2 elements, built-in diode for switching applications. Features include 40V DS breakdown voltage, 4.7A max drain current, 0.06 ohm max on resistance. Ideal for enhancement mode operation in surface mount designs at up to 150°C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
4.7 A
4.1 A
.06 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e3
1
2
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL AND P-CHANNEL
2.95 W
Not Qualified
Other Transistors
YES
Matte Tin (Sn)
GULL WING
DUAL
40
SWITCHING
SILICON
FDG6332C_F085
Fairchild Semiconductor
FDG6332C_F085 by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It's used for switching applications in enhancement mode, with max drain current of 0.7A and on-resistance of 0.3Ω. The package is SOT-23 style, surface mountable, operating up to 150°C.
20 V
.7 A
.3 ohm
R-PDSO-G6
6
.3 W
MATTE TIN
30
DMN5L06DW-7
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
LOW CAPACITANCE
50 V
.28 A
3 ohm
5 pF
N-CHANNEL
.2 W
FET General Purpose Power
DMN5L06V-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .28 A; No. of Elements: 2;
R-PDSO-F6
.15 W
FLAT
DMN5L06VA-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN5L06VAK-7
DMN5L06VAK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.28A max drain current, and 3 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. Suitable for small outline packages, it features separate elements with built-in diode and AEC-Q101 compliance.
HIGH RELIABILITY
-55 Cel
.25 W
AEC-Q101
FET General Purpose Powers
DMN5L06VK-7
DMN5L06VK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.28A max drain current, and 3 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. It comes in a small outline package with matte tin finish and AEC-Q101 standard compliance.
NTMD6P02R2SG
Onsemi
NTMD6P02R2SG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 6.2A Drain Current, and 0.033 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
6.2 A
4.8 A
.033 ohm
450 pF
P-CHANNEL
2 W
TIN
IRF5851TRPBF
International Rectifier
IRF5851TRPBF by International Rectifier is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications, operating in enhancement mode. With a max drain current of 2.7A and a min DS breakdown voltage of 20V, it is suitable for various electronic circuits requiring high performance in a small outline package.
2.7 A
.09 ohm
.96 W
FDG6301N-F085
FDG6301N-F085 by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.22A, operating at an enhancement mode with a breakdown voltage of 25V. With a small outline package style and peak reflow temperature of 260°C, it offers efficient performance in various electronic devices.
LOGIC LEVEL COMPATIBLE
25 V
.22 A
4 ohm
DMP2900UV-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .85 A; Maximum Feedback Capacitance (Crss): 3.4 pF; Terminal Position: DUAL;
LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
.85 A
.75 ohm
3.4 pF
.8 W
DMN3061SVT-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
30 V
3.4 A
29 pF
1.08 W
MCH6660-TL-W
MCH6660-TL-W by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max ID of 2A, RDS(on) of 0.136Ω, and V(BR)DSS of 20V. Operating in enhancement mode at up to 150°C, this MOSFET is surface mountable with a small outline package style.
2 A
.136 ohm
e6
TIN BISMUTH
TT8J3TR
ROHM
ROHM TT8J3TR is a P-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for SWITCHING applications, it has a max ID of 2.5A and 0.084Ω RDS(on). This SMALL OUTLINE transistor operates in ENHANCEMENT MODE with METAL-OXIDE SEMICONDUCTOR technology.
2.5 A
.084 ohm
R-PDSO-F8
10
MCH6662-TL-W
MCH6662-TL-W by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode. It has a max drain current of 2A, on resistance of 0.16 ohm, and operates in enhancement mode. Ideal for small outline applications requiring high power dissipation up to 0.8W at 150 °C.
.16 ohm
DMC1028UFDB-13
DMC1028UFDB-13 by Diodes Inc. is a Small Signal FET with N/P-channel types, 2 elements with built-in diode, and 12V DS breakdown voltage. Ideal for switching applications, it features a max ID of 6A, 0.025Ω RDS(on), and operates in enhancement mode.
DRAIN
12 V
6 A
.025 ohm
S-PDSO-N6
e4
SQUARE
NICKEL PALLADIUM GOLD
NO LEAD
DMC1029UFDB-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
5.6 A
.029 ohm
119 pF
2.2 W
DMN2041UFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .04 ohm; Case Connection: DRAIN;
.04 ohm
DMN3035LWN-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 5.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
5.5 A
.035 ohm
R-PDSO-N6
DMP2060UFDB-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.2 A; No. of Terminals: 6; Minimum DS Breakdown Voltage: 20 V;
3.2 A
DMC2041UFDB-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Maximum Drain-Source On Resistance: .04 ohm; Terminal Finish: NICKEL PALLADIUM GOLD;
DMN32D4SDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 30 V;
.65 A
1 ohm
6.8 pF
.35 W
DMN1029UFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
1.4 W
ZXMS6006DT8QTA
ZXMS6006DT8QTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.125 ohm RDS(on), and 150°C max operating temp. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.
60 V
.125 ohm
-40 Cel
MCH6663-TL-W
MCH6663-TL-W by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Features include 30V DS breakdown voltage, 0.188 ohm RDS(on), and 1.8A ID max. Ideal for applications requiring high temp operation up to 150 °C in small outline packages.
1.8 A
.188 ohm
ZXMS6004DT8QTA
ZXMS6004DT8QTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and AEC-Q101 standard. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals for surface mount assembly.
.6 ohm
DMC6070LND-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain Current (ID): 2.4 A; Terminal Finish: MATTE TIN;
2.4 A
.085 ohm
S-PDSO-F8
DMG1016VQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; No. of Elements: 2; Maximum Drain-Source On Resistance: .4 ohm;
.87 A
.4 ohm
5.37 pF
.53 W
AEC-Q101; IATF 16949; MIL-STD-202
DMN5L06DMKQ-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 50 V; No. of Elements: 2;
.305 A
VEC2315-TL-W
VEC2315-TL-W by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for amplifier applications. It features a 60V DS breakdown voltage, 0.137 ohm max RDS(on), and 2.5A max ID. This small outline transistor operates in enhancement mode at up to 150 °C, making it suitable for various electronic circuits.
.137 ohm
1 W
AMPLIFIER
VEC2616-TL-W
Onsemi's VEC2616-TL-W is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, this MOSFET offers 0.08 ohm RDS(on) and can handle up to 1W power dissipation at 150 °C.
3 A
.08 ohm
NTLUD4C26NTBG
NTLUD4C26NTBG by Onsemi is a Small Signal FET with 2 elements, built-in diode, and N-channel polarity. Ideal for switching applications, it has a max drain current of 4.8A, on-resistance of 0.021 ohm, and operates b/w -55 to 150 °C. This MOSFET in a square package with no lead terminals is designed for surface mount assembly.
.021 ohm
1.7 W
DMC2450UV-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 20 V; JESD-609 Code: e3;
ESD PROTECTED
1.03 A
.7 ohm
DMC1030UFDBQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Package Shape: SQUARE; Maximum Operating Temperature: 150 Cel;
5.1 A
.034 ohm
1.36 W
DMN1150UFL3-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-N4; Minimum Operating Temperature: -55 Cel;
.15 ohm
23 pF
R-PDSO-N4
4
.9 W
DMN3055LFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; JESD-609 Code: e4; Maximum Feedback Capacitance (Crss): 44 pF;
5 A
44 pF
DMN63D1LDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .39 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 60 V;
.25 A
2 ohm
2.9 pF
.39 W
MIL-STD-202
ZXMP6A16DN8QTA
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Reference Standard: AEC-Q101; Maximum Drain Current (ID): 2.9 A;
2.9 A
NVTJD4001NT2G
NVTJD4001NT2G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 0.25A Drain Current, and 1.5 ohm Drain-Source Resistance. With a max operating temperature of 150 °C, it is ideal for small outline packages in automotive electronics (AEC-Q101).
1.5 ohm
12 pF
.272 W
NX138AKSF
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.17 A
4.5 ohm
IEC-60134
DMP3048LSD-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; Maximum Drain Current (ID): 4.8 A;
.048 ohm
NX138BKSF
NX138BKSF by Nexperia is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is used for switching applications and features a max drain current of 0.21A and a max drain-source on resistance of 3.5 ohm.
.21 A
3.5 ohm
AEC-Q101; IEC-60134
BSL306NH6327XTSA1
Infineon Technologies
Infineon BSL306NH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, 0.057 ohm RDS(on), and 2.3A ID. Ideal for automotive applications due to AEC-Q101 standard compliance, it features separate elements with built-in diode in a small outline package. Operating from -55°C to 150°C, it offers high power dissipation and low feedback capacitance for efficient performance.
2.3 A
.057 ohm
17 pF
.5 W
PMDT290UNEYL
PMDT290UNEYL by Nexperia is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.8A, and Max Drain-Source On Resistance of 0.38 ohm. This small outline transistor operates in ENHANCEMENT MODE and is surface mountable.
.8 A
.38 ohm
BSL205NH6327XTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 20 V;
AVALANCHE RATED
.05 ohm
24 pF
BSL207NH6327XTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Package Shape: RECTANGULAR; Terminal Position: DUAL;
2.1 A
.07 ohm
BSL314PEH6327XTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Reference Standard: AEC-Q101; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1.5 A
.14 ohm
11 pF
BSL214NH6327XTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Elements: 2; Moisture Sensitivity Level (MSL): 1;
9 pF
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