Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO4606
Alpha & Omega Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .03 ohm; Package Style (Meter): SMALL OUTLINE;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
6 A
.03 ohm
METAL-OXIDE SEMICONDUCTOR
50 pF
R-PDSO-G8
2
8
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL AND P-CHANNEL
2 W
YES
GULL WING
DUAL
SWITCHING
SILICON
AO7800
AO7800 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It operates in ENHANCEMENT MODE, has 20V DS Breakdown Voltage, 0.3W Power Dissipation, and 0.9A Drain Current. With GULL WING terminals, it's a small outline package suitable for surface mount technology.
20 V
.9 A
.3 ohm
14 pF
R-PDSO-G6
6
N-CHANNEL
.3 W
SI4286DY-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI4286DY-T1-GE3 is a N-channel FET with 2 elements & built-in diode. It has a max drain current of 7A, on-resistance of 0.0325 ohm, and operates in enhancement mode for switching applications. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly up to 260°C.
40 V
7 A
.0325 ohm
1
260
2.9 W
Not Qualified
FET General Purpose Power
30
DMS3017SSD-13
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.79 W; Minimum DS Breakdown Voltage: 30 V; Maximum Drain-Source On Resistance: .012 ohm;
HIGH RELIABILITY
10 A
.008 A
.012 ohm
e3
1.79 W
MATTE TIN
DMS3019SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.79 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
9 A
.007 A
.015 ohm
BSS8402DWQ-13
BSS8402DWQ-13 by Diodes Incorporated is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 60V DS breakdown voltage, 7.5Ω max RDS(on), and 5pF Crss capacitance. With AEC-Q101 compliance, it suits automotive electronics requiring high reliability in compact designs.
60 V
.115 A
7.5 ohm
5 pF
AEC-Q101
BSS84DWQ-7
BSS84DWQ-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max 150°C. With 0.13A drain current and 10Ω on resistance, it offers reliable performance in various electronic circuits.
50 V
.13 A
10 ohm
12 pF
P-CHANNEL
Other Transistors
DMN5L06VK-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 50 V;
.28 A
3 ohm
R-PDSO-F6
.25 W
FLAT
DMP2100UCB9-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; No. of Terminals: 9;
4 A
3 A
.0175 ohm
55 pF
S-PBGA-B9
e1
9
SQUARE
GRID ARRAY
TIN SILVER COPPER
BALL
BOTTOM
FC6946010R
Panasonic
FC6946010R by Panasonic is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a 60V DS Breakdown Voltage, 0.1A Drain Current, and 15 ohm On Resistance. Operating in ENHANCEMENT MODE, it features a max power dissipation of 0.125W at 150°C.
.1 A
15 ohm
NOT SPECIFIED
.125 W
MTM763200LBF
Panasonic MTM763200LBF is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it operates in enhancement mode with max ID of 1.9A and RDS(on) of 0.105 ohm. Features METAL-OXIDE SEMICONDUCTOR tech and PLASTIC/EPOXY package for surface mount assembly.
1.9 A
.105 ohm
e6
TIN BISMUTH
NTZD3154NT1H
Onsemi
NTZD3154NT1H by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 20V, Max Drain Current of 0.54A, and Max Power Dissipation of 0.25W. This small outline transistor operates in enhancement mode with a max temperature of 150 °C.
.54 A
.55 ohm
20 pF
TIN
NTZD3155CT1H
NTZD3155CT1H by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance.
DMC6070LFDH-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: MATTE TIN; Additional Features: HIGH RELIABILITY;
3.1 A
.085 ohm
S-PDSO-N8
1.4 W
NO LEAD
DMN4027SSDQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17.2 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .027 ohm;
7.1 A
5.4 A
.027 ohm
17.2 W
BSL215CL6327HTSA1
Infineon Technologies
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): 9 pF;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
1.5 A
.14 ohm
9 pF
BSL308CL6327HTSA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Feedback Capacitance (Crss): 17 pF;
AVALANCHE RATED
2.3 A
.057 ohm
17 pF
BSL316CL6327HTSA1
Infineon's BSL316CL6327HTSA1 is a Small Signal FET with N/P-Channel, 2 elements & built-in diode. Operating in enhancement mode, it has max drain current of 1.4A and on-resistance of 0.16 ohm. Ideal for applications requiring high-speed switching in compact designs at up to 150°C.
1.4 A
.16 ohm
7 pF
BSL205NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
2.5 A
.05 ohm
24 pF
BSL214NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;
BSL215PL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G6;
.15 ohm
128 pF
BSL306NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 2.3 A; Qualification: Not Qualified; Additional Features: AVALANCHE RATED;
BSL308PEL6327HTSA1
Infineon's BSL308PEL6327HTSA1 is a P-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for small outline applications, it operates in enhancement mode with max ID of 2.1A and 0.08Ω RDS(on), featuring a max temp of 150°C.
LOGIC LEVEL COMPATIBLE
2.1 A
.08 ohm
7.8 pF
BSL315PL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
84 pF
BSL806NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
28.6 pF
BSL314PEL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .14 ohm; No. of Elements: 2; Maximum Drain Current (ID): 1.5 A;
11 pF
PMDPB38UNE,115
NXP Semiconductors
NXP Semiconductors' PMDPB38UNE,115 is a N-CHANNEL FET with 2 elements and built-in diode for switching applications. It has a max drain current of 5A, min DS breakdown voltage of 20V, and max power dissipation of 0.51W. This small outline transistor operates in enhancement mode at up to 150°C.
DRAIN
5 A
.061 ohm
S-PDSO-N6
.51 W
IEC-60134
PMGD175XN,115
PMGD175XN,115 by NXP Semiconductors is a N-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 0.9A Drain Current, and 0.225 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
.225 ohm
.905 W
PMDPB95XNE,115
PMDPB95XNE,115 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max drain current of 3.1A and max power dissipation of 6.25W.
2.4 A
.12 ohm
6.25 W
DMG6301UDW-7
DMG6301UDW-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 0.24A, and operating temperature range from -55 to 150°C. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.
25 V
.24 A
4 ohm
.37 W
NTMD5836NLR2G
NTMD5836NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 9A Drain Current, and 0.0308 ohm On Resistance. It is used in applications requiring high power dissipation up to 1.5W, operating at temperatures up to 150 °C. Ideal for surface mount designs due to its GULL WING terminals and SMALL OUTLINE package style.
5.7 A
.0308 ohm
1.5 W
FDG6322CD87Z
Fairchild Semiconductor
FDG6322CD87Z by Fairchild Semiconductor is a Small Signal FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.41A, it operates in enhancement mode at up to 150°C temperature.
.41 A
.22 A
FDG6301ND87Z
FDG6301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features 25V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. With GULL WING terminals in a SMALL OUTLINE package, it offers 0.22A Drain Current and 4Ω On Resistance.
FDG6303ND87Z
FDG6303ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has GULL WING terminals and operates in ENHANCEMENT MODE.
.5 A
.45 ohm
DMN2014LHAB-7
DMN2014LHAB-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode for switching applications. It operates in enhancement mode, has a max drain current of 9A, and low on-resistance of 0.013 ohm. With AEC-Q101 standard compliance, it's ideal for automotive electronics requiring high power dissipation up to 1.7W at temperatures ranging from -55 to 150°C.
.013 ohm
145 pF
R-PDSO-N4
e4
4
1.7 W
NICKEL PALLADIUM GOLD
FDR8521L
FDR8521L by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in Enhancement Mode for switching applications, with max ID of 2.9A and RDS(on) of 0.07 ohm. This rectangular package has Gull Wing terminals and is surface mountable.
2.9 A
.07 ohm
DMP57D5UV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 6 ohm; Terminal Position: DUAL;
.16 A
6 ohm
.4 W
BSO200N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
6.6 A
.02 ohm
56 pF
MS-012
3
NTGD3133PT1G
NTGD3133PT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.5A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a rectangular package and GULL WING terminals for surface mount assembly.
1.6 A
.145 ohm
1.3 W
Tin (Sn)
40
DMN5L06DMK-7
DMN5L06DMK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, ideal for switching applications. It features separate configuration with built-in diode, small outline package style, and operates in enhancement mode at up to 150°C.
.305 A
DMN5L06DWK-7
DMN5L06DWK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, suitable for switching applications. It features a separate configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 0.25W and can withstand temperatures up to 150°C.
BSD223PL6327
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Feedback Capacitance (Crss): 22 pF;
.39 A
1.2 ohm
22 pF
NTUD3128NT5G
NTUD3128NT5G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.16A, and Max Power Dissipation of 0.2W. This small outline transistor operates in enhancement mode at temperatures up to 150 °C.
.2 W
NICKEL GOLD PALLADIUM
NTHD4102PT3G
NTHD4102PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max ID of 2.9A, and RDS(on) of 0.08 ohm. This small outline transistor operates in enhancement mode with a peak reflow temperature of 260 °C.
R-XDSO-C8
UNSPECIFIED
C BEND
DMN32D2LV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.4 A
FDC6000NZ_F077
Fairchild Semiconductor's FDC6000NZ_F077 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.3A ID, and 0.02 ohm RDS(on). Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, ENHANCEMENT MODE operation, and dual elements with built-in diode.
7.3 A
1.8 W
Nickel/Palladium/Gold (Ni/Pd/Au)
PHKD13N03LT,118
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
10.4 A
MS-012AA
PMWD26UN,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 7800 ohm;
5.2 A
7800 ohm
MO-153AB
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