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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 166

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSL806NH6327XTSA1 by Infineon Technologies

BSL806NH6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 28.6 pF;

AVALANCHE RATED

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.3 A

.057 ohm

METAL-OXIDE SEMICONDUCTOR

28.6 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

DMN5L06VK-13A by Diodes Incorporated

DMN5L06VK-13A

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN5L06VK-7A by Diodes Incorporated

DMN5L06VK-7A

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-30 Code: R-PDSO-F6; Maximum Drain-Source On Resistance: 3 ohm;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMC62D0SVQ-13 by Diodes Incorporated

DMC62D0SVQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .84 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.571 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

2.9 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.84 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMC62D0SVQ-7 by Diodes Incorporated

DMC62D0SVQ-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .84 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-F6;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.571 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

2.9 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.84 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMC2057UVT-13 by Diodes Incorporated

DMC2057UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Terminal Position: DUAL; Terminal Form: GULL WING;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

4 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.1 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMC3730UVT-13 by Diodes Incorporated

DMC3730UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Terminal Finish: MATTE TIN; Package Shape: RECTANGULAR;

ESD PROTECTED, HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.46 A

1.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.9 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN5L06VKQ-13 by Diodes Incorporated

DMN5L06VKQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMT3022UEV-13 by Diodes Incorporated

DMT3022UEV-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;

ESD PROTECTED

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

17 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

67 pF

S-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.8 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT3022UEV-7 by Diodes Incorporated

DMT3022UEV-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

ESD PROTECTED

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

17 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

67 pF

S-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.8 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

FDG6301N-F085P by Onsemi

FDG6301N-F085P

Onsemi

FDG6301N-F085P by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and 25V DS breakdown voltage. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and -55°C min operating temperature. Features include 4Ω max drain-source resistance, 0.22A max drain current, and matte tin terminal finish.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.22 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

DMC67D8UFDBQ-13 by Diodes Incorporated

DMC67D8UFDBQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .89 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 20 V;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.9 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

101 pF

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.89 W

AEC-Q101

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN3060LVT-13 by Diodes Incorporated

DMN3060LVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; JESD-30 Code: R-PDSO-G6; No. of Terminals: 6;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

3.6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.16 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP3164LVT-13 by Diodes Incorporated

DMP3164LVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

LOW CAPACITANCE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

2.8 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

33 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.16 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2900UV-7 by Diodes Incorporated

DMP2900UV-7

Diodes Incorporated

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F6; Terminal Form: FLAT; Terminal Position: DUAL;

LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.85 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

3.4 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.8 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN33D9LV-13A by Diodes Incorporated

DMN33D9LV-13A

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.35 A

.0024 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.43 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

FDG6332C-F085P by Onsemi

FDG6332C-F085P

Onsemi

Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.7 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.3 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMC2710UV-13 by Diodes Incorporated

DMC2710UV-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (ID): 1.1 A; Terminal Position: DUAL;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

1.1 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.8 W

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMT4031LSD-13 by Diodes Incorporated

DMT4031LSD-13

Diodes Incorporated

DMT4031LSD-13 by Diodes Inc. is a N-channel FET with 40V DS breakdown voltage, 36A IDM, and 0.023 ohm RDS(on). Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology. Operating from -55 to 150 °C, this MOSFET offers high power dissipation of 1.5W and peak reflow temp of 260C.

7.6 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

6.3 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-PDSO-G8

e3

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.5 W

36 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMC31D5UDAQ-7B by Diodes Incorporated

DMC31D5UDAQ-7B

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .37 W; No. of Terminals: 6; Terminal Position: BOTTOM;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.4 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

1.8 pF

R-PBCC-N6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL AND P-CHANNEL

.37 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN62D0UV-13 by Diodes Incorporated

DMN62D0UV-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .74 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.49 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

2.4 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.74 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN2046UVT-13 by Diodes Incorporated

DMN2046UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .94 W; Reference Standard: MIL-STD-202; No. of Terminals: 6;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.6 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

27 pF

R-PDSO-G6

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.94 W

MIL-STD-202

YES

GULL WING

DUAL

SWITCHING

SILICON