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YES Small Signal Bipolar Junction Transistors (BJT) 1,507

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCW68FE6327HTSA1 by Infineon Technologies

BCW68FE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;

.8 A

45 V

SINGLE

35

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCX41E6433HTMA1 by Infineon Technologies

BCX41E6433HTMA1

Infineon Technologies

BCX41E6433HTMA1 by Infineon Technologies is a NPN BJT transistor with hFE of 40, VCE of 125V, and IC of 0.8A. It is used for switching applications in surface mount designs due to its small outline package style and high transition frequency of 100MHz.

.8 A

125 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCX42E6433HTMA1 by Infineon Technologies

BCX42E6433HTMA1

Infineon Technologies

Infineon BCX42E6433HTMA1 is a PNP BJT transistor for switching applications. Features include hFE of 40, VCE of 125V, and IC of 0.8A. With a fT of 150MHz, it's ideal for small outline surface mount designs requiring high-speed switching capabilities.

.8 A

125 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCX52E6327HTSA1 by Infineon Technologies

BCX52E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

COLLECTOR

1 A

60 V

SINGLE

40

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

125 MHz

BCX53E6327HTSA1 by Infineon Technologies

BCX53E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

125 MHz

BCX56E6327HTSA1 by Infineon Technologies

BCX56E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Moisture Sensitivity Level (MSL): 1;

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BCX70HE6327HTSA1 by Infineon Technologies

BCX70HE6327HTSA1

Infineon Technologies

Infineon BCX70HE6327HTSA1 is a NPN BJT transistor with hFE of 70, VCE of 45V, and fT of 250MHz. Ideal for switching applications due to its small outline package, Gull Wing terminals, and surface mount capability.

.1 A

45 V

SINGLE

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCX70HE6433HTMA1 by Infineon Technologies

BCX70HE6433HTMA1

Infineon Technologies

Infineon BCX70HE6433HTMA1 is a NPN BJT transistor with hFE of 70, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it features a small outline package with gull wing terminals for surface mount assembly.

.1 A

45 V

SINGLE

70

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BCX70JE6433HTMA1 by Infineon Technologies

BCX70JE6433HTMA1

Infineon Technologies

BCX70JE6433HTMA1 by Infineon Technologies is a NPN BJT transistor for switching applications. It has a min DC current gain of 90 and a max collector-emitter voltage of 45V. With a nominal transition frequency of 250MHz, it is ideal for surface mount designs requiring small outline packages.

.1 A

45 V

SINGLE

90

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BCX71KE6327HTSA1 by Infineon Technologies

BCX71KE6327HTSA1

Infineon Technologies

BCX71KE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with a hFE of 110 and VCE of 45V, ideal for switching applications. It features a surface-mount Gull Wing package style with 3 terminals and silicon element material. With a transition frequency of 250MHz, it offers efficient performance in small outline designs.

.1 A

45 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BFN18E6327HTSA1 by Infineon Technologies

BFN18E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

70 MHz

SMBT3904E6433HTMA1 by Infineon Technologies

SMBT3904E6433HTMA1

Infineon Technologies

Infineon's SMBT3904E6433HTMA1 is a NPN BJT transistor with max. Vce of 40V, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its fast turn-on/off times and small outline package style. Suitable for surface mount designs with Gull Wing terminals in plastic/epoxy body material.

.2 A

40 V

SINGLE

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

250 ns

70 ns

SMBTA06E6433HTMA1 by Infineon Technologies

SMBTA06E6433HTMA1

Infineon Technologies

SMBTA06E6433HTMA1 by Infineon is a NPN BJT transistor with max. collector-emitter voltage of 80V, ideal for amplifier applications. Featuring a min. DC current gain of 100 and max. operating temp of 150°C, it has a small outline package style suitable for surface mount assembly with Gull Wing terminals.

.5 A

80 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC857BWH6327 by Infineon Technologies

BC857BWH6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101;

LOW NOISE

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BCV49E6327HTSA1 by Infineon Technologies

BCV49E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

FLAT

SINGLE

SILICON

150 MHz

BCX5316E6327HTSA1 by Infineon Technologies

BCX5316E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

FLAT

SINGLE

40

AMPLIFIER

SILICON

125 MHz

2SAR552PFRAT100 by ROHM

2SAR552PFRAT100

ROHM

ROHM 2SAR552PFRAT100 is a PNP BJT transistor with hFE of 200, VCE of 30V, and IC of 3A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and high transition frequency of 330MHz.

COLLECTOR

3 A

30 V

SINGLE

200

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

FLAT

SINGLE

10

SWITCHING

SILICON

330 MHz

2SAR553PFRAT100 by ROHM

2SAR553PFRAT100

ROHM

ROHM 2SAR553PFRAT100 is a PNP BJT transistor with hFE of 180, VCE of 50V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and fT of 320MHz.

COLLECTOR

2 A

50 V

SINGLE

180

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

2SCR512PFRAT100 by ROHM

2SCR512PFRAT100

ROHM

ROHM's 2SCR512PFRAT100 is a NPN BJT transistor with hFE of 200, VCE of 30V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 320MHz.

COLLECTOR

2 A

30 V

SINGLE

200

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

2SCR554PFRAT100 by ROHM

2SCR554PFRAT100

ROHM

ROHM 2SCR554PFRAT100 is a NPN BJT transistor with hFE of 120, VCE of 80V, and IC of 1.5A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 300MHz.

COLLECTOR

1.5 A

80 V

SINGLE

120

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2N2907AUB1 by STMicroelectronics

2N2907AUB1

STMicroelectronics

2N2907AUB1 by STMicroelectronics is a PNP BJT transistor for switching applications. With hFE of 50, Vce of 60V, and Ic of 0.5A, it offers fast ton of 45ns and toff of 300ns. This SMD transistor in small outline package is ideal for compact electronic designs.

.5 A

60 V

SINGLE

50

R-XDSO-N3

e4

1

3

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

PNP

YES

Gold (Au)

NO LEAD

DUAL

SWITCHING

SILICON

300 ns

45 ns

MBT3906DW1T2G by Onsemi

MBT3906DW1T2G

Onsemi

MBT3906DW1T2G by Onsemi is a PNP BJT transistor with hFE of 100, fT of 250 MHz, and IC of 0.2 A. Ideal for surface mount applications with max temp of 150 °C, it's suitable for low-power amplification in electronic circuits.

.2 A

100

e3

1

150 Cel

260

PNP

.15 W

Other Transistors

YES

TIN

30

250 MHz

BC817K25E6327HTSA1 by Infineon Technologies

BC817K25E6327HTSA1

Infineon Technologies

BC817K25E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. It comes in a small outline package with gull wing terminals for surface mount assembly.

.5 A

45 V

SINGLE

160

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

ZX5T3ZTC by Diodes Incorporated

ZX5T3ZTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 152 MHz; Maximum Collector Current (IC): 5.5 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY

COLLECTOR

5.5 A

40 V

SINGLE

110

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

152 MHz

FMMTA42QTA by Diodes Incorporated

FMMTA42QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

HIGH RELIABILITY

.2 A

300 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

50 MHz

CPH5518-TL-E by Onsemi

CPH5518-TL-E

Onsemi

CPH5518-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. It boasts a max power dissipation of 1.2W, min hFE of 200, and max IC of 1A. With an operating temp up to 150°C, it's suitable for various electronic circuits requiring high current amplification.

1 A

200

e6

1

150 Cel

260

NPN AND PNP

1.2 W

BIP General Purpose Small Signals

YES

TIN BISMUTH

30

2SB1216T-TL-E by Onsemi

2SB1216T-TL-E

Onsemi

2SB1216T-TL-E by Onsemi is a PNP BJT transistor with 100V VCEO, 4A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 20W in a small outline package. With Gull Wing terminals and TIN BISMUTH finish, it operates up to 150 °C.

COLLECTOR

4 A

100 V

SINGLE

200

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

130 MHz

2SD1816S-TL-H by Onsemi

2SD1816S-TL-H

Onsemi

Onsemi's 2SD1816S-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. This small outline package has a transition frequency of 180MHz, making it suitable for high-speed switching circuits.

COLLECTOR

4 A

100 V

SINGLE

140

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

180 MHz

2SD1816T-TL-H by Onsemi

2SD1816T-TL-H

Onsemi

Onsemi's 2SD1816T-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature. Its small outline package and high transition frequency of 180MHz make it suitable for compact electronic designs requiring fast signal processing.

COLLECTOR

4 A

100 V

SINGLE

200

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

GULL WING

SINGLE

30

SWITCHING

SILICON

180 MHz

DDC114YUQ-13-F by Diodes Incorporated

DDC114YUQ-13-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC115EUAQ-7-F by Diodes Incorporated

DDTC115EUAQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BC818K16WH6327XTSA1 by Infineon Technologies

BC818K16WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

25 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC818K40E6327HTSA1 by Infineon Technologies

BC818K40E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

25 V

SINGLE

250

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC847BL3E6327XTMA1 by Infineon Technologies

BC847BL3E6327XTMA1

Infineon Technologies

BC847BL3E6327XTMA1 by Infineon Technologies is a NPN BJT with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, this surface-mount transistor in chip carrier package offers a max collector current of 0.1A.

LOW NOISE

COLLECTOR

.1 A

45 V

SINGLE

200

R-XBCC-N3

e4

1

1

3

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NPN

YES

GOLD

NO LEAD

BOTTOM

AMPLIFIER

SILICON

250 MHz

BC848CWH6327XTSA1 by Infineon Technologies

BC848CWH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC850CWH6327XTSA1 by Infineon Technologies

BC850CWH6327XTSA1

Infineon Technologies

BC850CWH6327XTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 420, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it has GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC857BWH6327XTSA1 by Infineon Technologies

BC857BWH6327XTSA1

Infineon Technologies

BC857BWH6327XTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style. Suitable for surface mount assembly with dual terminals and AEC-Q101 compliance.

LOW NOISE

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC857CWH6327XTSA1 by Infineon Technologies

BC857CWH6327XTSA1

Infineon Technologies

BC857CWH6327XTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 420, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package suitable for surface mount technology.

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC858BWH6327XTSA1 by Infineon Technologies

BC858BWH6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;

LOW NOISE

.1 A

30 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC860CWH6327XTSA1 by Infineon Technologies

BC860CWH6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: LOW NOISE;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BCR112WH6327XTSA1 by Infineon Technologies

BCR112WH6327XTSA1

Infineon Technologies

BCR112WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, DC current gain of 20, and max collector current of 0.1A. This surface mount transistor in small outline package is made of silicon and operates at a nominal transition frequency of 140MHz.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

BCR116SH6327XTSA1 by Infineon Technologies

BCR116SH6327XTSA1

Infineon Technologies

BCR116SH6327XTSA1 by Infineon is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, ideal for switching applications. With a min hFE of 70 and fT of 150MHz, it offers efficient performance in small outline packages for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

BCR116WH6327XTSA1 by Infineon Technologies

BCR116WH6327XTSA1

Infineon Technologies

BCR116WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a hFE of 70, Vce(max) of 50V, and fT of 150MHz. This small outline transistor is surface mountable with Gull Wing terminals, ideal for compact electronic designs.

BUILT-IN BIAS RESISTOR RATIO 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

BCR148SH6327XTSA1 by Infineon Technologies

BCR148SH6327XTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR198SH6327XTSA1 by Infineon Technologies

BCR198SH6327XTSA1

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

190 MHz

BCP5216E6327HTSA1 by Infineon Technologies

BCP5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

2 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

125 MHz

BCP5310E6327HTSA1 by Infineon Technologies

BCP5310E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCR119WH6327XTSA1 by Infineon Technologies

BCR119WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz