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YES Small Signal Bipolar Junction Transistors (BJT) 1,507

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RN1107ACT(TPL3) by Toshiba

RN1107ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1108ACT(TPL3) by Toshiba

RN1108ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1109ACT(TPL3) by Toshiba

RN1109ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 70; No. of Elements: 1;

.08 A

70

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1112ACT(TPL3) by Toshiba

RN1112ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; No. of Elements: 1;

.08 A

120

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1113ACT(TPL3) by Toshiba

RN1113ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.08 A

120

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1510(TE85L,F) by Toshiba

RN1510(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

120

2

NPN

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN1601(TE85L,F) by Toshiba

RN1601(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

30

2

NPN

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN1606(TE85L,F) by Toshiba

RN1606(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

260

NPN

.3 W

BIP General Purpose Small Signal

YES

30

SILICON

RN1610(TE85L,F) by Toshiba

RN1610(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

2

NPN

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN1704JE(TE85L,F) by Toshiba

RN1704JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1708JE(TE85L,F) by Toshiba

RN1708JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1709JE(TE85L,F) by Toshiba

RN1709JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70; Peak Reflow Temperature (C): 260;

.1 A

70

2

260

NPN

.1 W

BIP General Purpose Small Signal

YES

30

SILICON

RN1710JE(TE85L,F) by Toshiba

RN1710JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1901FE(TE85L,F) by Toshiba

RN1901FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 30;

.1 A

30

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1908FE(TE85L,F) by Toshiba

RN1908FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1909FE(TE85L,F) by Toshiba

RN1909FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

70

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1961FE(TE85L,F) by Toshiba

RN1961FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

30

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1963FE(TE85L,F) by Toshiba

RN1963FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

70

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1965FE(TE85L,F) by Toshiba

RN1965FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1967FE(TE85L,F) by Toshiba

RN1967FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1970FE(TE85L,F) by Toshiba

RN1970FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1971FE(TE85L,F) by Toshiba

RN1971FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2107ACT(TPL3) by Toshiba

RN2107ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2108ACT(TPL3) by Toshiba

RN2108ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1911FE(TE85L,F) by Toshiba

RN1911FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2506(TE85L,F) by Toshiba

RN2506(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; No. of Elements: 2;

.1 A

80

2

260

PNP

.3 W

BIP General Purpose Small Signal

YES

30

SILICON

RN2114(TE85L,F) by Toshiba

RN2114(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 50;

.1 A

50

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2117(TE85L,F) by Toshiba

RN2117(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2304(TE85L,F) by Toshiba

RN2304(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.1 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2307(TE85L,F) by Toshiba

RN2307(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;

.1 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2309(TE85L,F) by Toshiba

RN2309(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2313(TE85L,F) by Toshiba

RN2313(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2310(TE85L,F) by Toshiba

RN2310(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2311(TE85L,F) by Toshiba

RN2311(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2317(TE85L,F) by Toshiba

RN2317(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2511(TE85L,F) by Toshiba

RN2511(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN2704JE(TE85L,F) by Toshiba

RN2704JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2705JE(TE85L,F) by Toshiba

RN2705JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2706JE(TE85L,F) by Toshiba

RN2706JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2708JE(TE85L,F) by Toshiba

RN2708JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 2;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2607(TE85L,F) by Toshiba

RN2607(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN2608(TE85L,F) by Toshiba

RN2608(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN2711(TE85L,F) by Toshiba

RN2711(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN2911FE(TE85L,F) by Toshiba

RN2911FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

120

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2962FE(TE85L,F) by Toshiba

RN2962FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

.1 A

50

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2971FE(TE85L,F) by Toshiba

RN2971FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN4609(TE85L,F) by Toshiba

RN4609(TE85L,F)

Toshiba

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 70;

.1 A

70

2

NPN AND PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN4611(TE85L,F) by Toshiba

RN4611(TE85L,F)

Toshiba

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

NPN AND PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON