Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BCR158WH6327XTSA1
Infineon Technologies
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
BUILT-IN BIAS RESISTOR RATIO IS 21.36
.1 A
50 V
SINGLE WITH BUILT-IN RESISTOR
70
R-PDSO-G3
e3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
PNP
YES
TIN
GULL WING
DUAL
SWITCHING
SILICON
200 MHz
BCR169WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
BUILT-IN BIAS RESISTOR
120
BCR191WH6327XTSA1
BCR191WH6327XTSA1 by Infineon Technologies is a PNP BJT with built-in resistor for switching applications. It has a hFE of 50, VCE of 50V, and fT of 200MHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BUILT-IN BIAS RESISTOR RATIO 1
50
BCR192WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT-IN BIAS RESISTOR RATIO IS 2.14
BCR48PNH6327XTSA1
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;
.07 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G6
2
6
NPN AND PNP
100 MHz
BCR573E6327HTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO 0.1;
BUILT-IN BIAS RESISTOR RATIO 0.1
.5 A
150 MHz
BCW66KGE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;
.8 A
45 V
SINGLE
40
NPN
AEC-Q101
AMPLIFIER
170 MHz
BCX5616E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;
COLLECTOR
1 A
80 V
100
R-PSSO-F3
MATTE TIN
FLAT
BCX6810E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;
20 V
85
150 Cel
3 W
Other Transistors
BCX6816E6327HTSA1
BCX6825E6327HTSA1
160
NOT SPECIFIED
BFN39E6327HTSA1
Infineon's BFN39E6327HTSA1 is a PNP BJT transistor with 300V VCE, 0.2A IC, and 100MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package design.
.2 A
300 V
30
R-PDSO-G4
4
SMBT3904PNH6327XTSA1
SMBT3904PNH6327XTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max collector-emitter voltage of 40V, hFE of 30, and fT of 250MHz. With a package style of small outline and Gull Wing terminals, it's suitable for surface mount designs in various electronic circuits.
40 V
SEPARATE, 2 ELEMENTS
250 MHz
300 ns
70 ns
SMBT3904SH6327XTSA1
Infineon's SMBT3904SH6327XTSA1 is a NPN BJT transistor for switching applications. With hFE of 30, VCE of 40V, and fT of 300MHz, it offers fast ton of 70ns and toff of 250ns. Its Gull Wing terminals in a small outline package make it ideal for surface mount designs.
300 MHz
250 ns
SMBT3906UE6327HTSA1
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
BSR43QTA
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
260
1000 ns
2SD1815S-TL-H
Onsemi
2SD1815S-TL-H by Onsemi is a NPN BJT with 20W power dissipation, 140 min hFE, and 150 °C max operating temp. Ideal for applications requiring a single configuration, surface mount capability, and up to 3A collector current.
3 A
140
e6
20 W
TIN BISMUTH
2SD1815T-TL-H
The Onsemi 2SD1815T-TL-H is a NPN BJT with max power dissipation of 20W, hFE of 200, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability. Operating temp up to 150 °C makes it suitable for various electronic devices.
200
BCX70KT216
ROHM
ROHM BCX70KT216 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 380, and fT of 125MHz. Ideal for amplifier applications due to its low saturation voltage and high transition frequency. Features GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.
LOW NOISE
4.5 pF
380
Not Qualified
125 MHz
.3 V
DTD143ECT216
ROHM DTD143ECT216 is a NPN BJT with VCEsat of 0.3V, hFE of 47, and IC of 0.5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 200MHz. Package: PLASTIC/EPOXY, RECTANGULAR shape with GULL WING terminals in SMALL OUTLINE style.
BUILT-IN BIAS RESISTOR RATIO IS 1
47
e1
Tin/Silver/Copper (Sn/Ag/Cu)
10
BCW72T116
BCW72T116 by ROHM is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 200, and fT of 300MHz. Ideal for amplifier applications, it has a max operating temp of 150°C and max VCE of 45V. This small outline transistor in gull wing package is surface mountable.
4 pF
BCW60CT116
ROHM BCW60CT116 is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 260, and fT of 125MHz. Ideal for amplifier applications due to its small outline package style and max operating temp of 150°C. Suitable for surface mount designs with Gull Wing terminals and rectangular shape.
32 V
BCX70JT116
ROHM BCX70JT116 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 250, and fT of 125MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with GULL WING terminals.
250
.2 W
TIN SILVER COPPER
BCX70KT116
ROHM's BCX70KT116 is a NPN small signal bipolar junction transistor (BJT) with a max VCEsat of 0.3V, making it suitable for amplifier applications. It has a min DC current gain (hFE) of 380 and can handle a max collector-emitter voltage of 45V.
MMDT2907AQ-7-F
MMDT2907AQ-7-F by Diodes Incorporated is a PNP BJT with 2 elements, ideal for switching applications. It features VCEsat of 1.6V, hFE of 50, and IC of 0.6A. With a max operating temp of 150°C and fT of 200MHz, it's suitable for small outline packages in automotive electronics.
.6 A
8 pF
60 V
-55 Cel
AEC-Q101; IATF 16949
100 ns
45 ns
1.6 V
NSVMUN5113DW1T3G
NSVMUN5113DW1T3G by Onsemi is a PNP BJT with 2 elements, hFE of 80. It has 0.1A IC, 0.385W power dissipation, and matte tin finish. Ideal for small signal applications in electronics due to its silicon material and surface mount capability.
80
.385 W
BIP General Purpose Small Signal
NSVMMBT5088LT3G
NSVMMBT5088LT3G by Onsemi is a NPN BJT with hFE of 300, VCE of 30V, and fT of 50MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and IC of 0.05A.
.05 A
30 V
300
TO-236AB
50 MHz
ZXTN04120HP5TC
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1.5 A; JESD-609 Code: e3;
1.5 A
120 V
DARLINGTON
500
R-PDSO-F3
CPH3121-TL-E
CPH3121-TL-E by Onsemi is a PNP BJT transistor with max power dissipation of 0.9W, hFE of 200, and IC of 3A. Ideal for surface mount applications in electronics due to its high operating temp of 150 °C and peak reflow temp of 260°C within 30s.
.9 W
RN6002
Toshiba
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 2 A;
BUILT IN BIAS RESISTOR
2 A
e0
1 W
.5 W
TIN LEAD
120 MHz
.5 V
RN2502
PNP; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BUILT-IN RESISTOR RATIO IS 1
6 pF
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
.3 W
BC807-16-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;
12 pF
60
.31 W
.7 V
BC807-25-7
BC807-40-7
170
2SD2143TL
ROHM 2SD2143TL is a NPN BJT with Darlington configuration, built-in diode and resistor. It has max power dissipation of 10W, hFE of 1000, and operates up to 150°C. Ideal for switching applications due to its high collector current (2A) and transition frequency (80MHz).
BUILT IN BIAS RESISTANCE RATIO IS 0.0857
70 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
1000
R-PSSO-G2
e2
10 W
TIN COPPER
80 MHz
IMD3AT108
ROHM's IMD3AT108 is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor for switching applications. With max VCEsat of 0.3V, it operates up to 150°C, has fT of 250MHz, and can handle IC of 0.05A in a small outline package suitable for surface mount technology.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
UMH6NTR
ROHM UMH6NTR is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.3V, hFE of 68, and max IC of 0.03A. With a package style of small outline and peak reflow temp at 260°C, it's ideal for compact electronic devices.
BUILT IN BIAS RESISTANCE RATIO IS 1.2
.03 A
68
.15 W
BIP General Purpose Small Signals
IMX2T108
ROHM's IMX2T108 is a NPN BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and Pdiss of 0.3W, it's suitable for small outline packages in surface mount designs.
.15 A
180 MHz
.4 V
IMX3T108
ROHM's IMX3T108 is a NPN BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and IC of 0.15A, it's suitable for small outline packages in surface mount configurations.
UMX2NTR
ROHM UMX2NTR is a NPN BJT with 2 elements, ideal for amplifier applications. It has a VCEsat of 0.4V and hFE of 120. With a max operating temp of 150°C, it offers a transition frequency of 180MHz in a small outline package.
2SC4098T106P
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
2.2 pF
25 V
82
IMZ4T108
ROHM's IMZ4T108 is a Small Signal BJT with NPN and PNP types, 2 separate elements, and Gull Wing terminals. It has a max power dissipation of 0.3W, hFE of 120, and can handle up to 32V collector-emitter voltage. Ideal for applications requiring high transition frequency (fT) of 250MHz in small outline packages.
SO642
STMicroelectronics
SO642 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.
SO692
SO692 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.
25
2SA1797T100/Q
ROHM 2SA1797T100/Q is a PNP BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 3A. It has a min. DC current gain of 120, ideal for amplifier applications due to its high transition frequency of 200MHz and small outline package style.
2 W
Tin/Copper (Sn/Cu)
MMSTA28T146
ROHM MMSTA28T146 is a NPN BJT transistor with max VCEsat of 1.5V, hFE of 10000, and fT of 200MHz. Ideal for amplifier applications due to its small outline package style and high transition frequency. Suitable for surface mount designs with Gull Wing terminals and operates up to 150°C.
.3 A
10000
1.5 V
2SB1181TL/Q
ROHM's 2SB1181TL/Q is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications, it has a max operating temp of 150°C and can handle power dissipation up to 10W in a small outline package.
DTA114YCAT116
ROHM DTA114YCAT116 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.07A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, making it suitable for high-frequency operations up to 250MHz.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
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