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BCX70JT116

ROHM

BCX70JT116 by ROHM

ROHM BCX70JT116 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 250, and fT of 125MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with GULL WING terminals.

Median Price

$0.116

Lifecycle Status

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Chip1Stop

Japan . 3,000 parts In-Stock

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Nova Conductors

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Vyrian

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Aranea Global

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$0.078

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$0.075

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Continental Prestige Electronics

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Argo Parts USA

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$0.077

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Ampacity Inc.

Singapore . 2,557 parts In-Stock

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$0.099

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Corohmni

South Africa . 127 parts In-Stock

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Overview

Discover the BCX70JT116 by ROHM, a top-quality NPN Small Signal Bipolar Junction Transistor designed for amplifier applications. With a maximum VCEsat of 0.3V and a minimum DC current gain of 250, this transistor offers superior performance and reliability. Manufactured by ROHM, a trusted name in the industry known for their innovative solutions, the BCX70JT116 boasts a small outline package style for easy integration and features a peak reflow temperature of 260°C. Take your projects to the next level with the BCX70JT116, where quality meets value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and protects the transistor from external elements, ensuring reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and high current gain, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Having a single configuration simplifies circuit design and assembly, making it easier to integrate this transistor into amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing overall costs in manufacturing.

Maximum VCEsat: 0.3 V

Low VCEsat ensures minimal power loss and high efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement on PCBs, optimizing space utilization in compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections, enhancing the reliability and stability of the transistor in the circuit.

No. of Terminals: 3

Having only 3 terminals simplifies circuit connections and reduces the risk of errors during assembly.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation capability ensures the transistor can handle moderate power levels without overheating, improving overall reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact electronic devices and applications with size constraints.

Minimum DC Current Gain (hFE): 250

High DC current gain ensures optimal amplification performance and stability in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of temperature conditions, making it suitable for various applications.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 45 V

High maximum collector-emitter voltage rating ensures safe operation in applications with varying voltage levels.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and temperature stability, ensuring reliable performance over a wide temperature range.

Maximum Collector Current (IC): 0.2 A

Able to handle moderate collector current levels, suitable for amplifier applications with moderate power requirements.

Terminal Finish: TIN SILVER COPPER

Tin silver copper finish provides excellent solderability and conductivity, ensuring stable electrical connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and layout, accommodating different PCB configurations.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperature for a specified duration, ensuring reliability during the soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures compatibility with RoHS requirements and lead-free soldering processes.

Nominal Transition Frequency (fT): 125 MHz

High nominal transition frequency allows for fast signal switching and amplification, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX70JT116 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BCX70JT116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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