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BCX70KT216

ROHM

BCX70KT216 by ROHM

ROHM BCX70KT216 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 380, and fT of 125MHz. Ideal for amplifier applications due to its low saturation voltage and high transition frequency. Features GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.

Median Price

$0.104

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Nova Conductors

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Vyrian

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Continental Prestige Electronics

USA . 2,408 parts In-Stock

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Argo Parts USA

USA . 1,497 parts In-Stock

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Component Stockers USA

USA . 220,261 parts In-Stock

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Advanced Electronics

New Zealand . 900 parts In-Stock

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$0.767

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$0.698

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$0.629

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Corohmni

South Africa . 21 parts In-Stock

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$1.330

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AZTECH Wire

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Ampacity Inc.

Singapore . 1,125 parts In-Stock

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Netroflash

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Overview

Unleash the power of innovation with the BCX70KT216 by ROHM, a top-quality Small Signal Bipolar Junction Transistor that sets new standards in amplifier technology. With ROHM's reputation for excellence and reliability backing it up, this NPN transistor is perfect for a wide range of applications. From improving audio quality to enhancing signal processing, this transistor delivers unmatched performance with a low VCEsat of 0.3V and a high DC Current Gain of 380. Experience the difference with ROHM's BCX70KT216 - where quality meets value for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, ideal for portable devices.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, reducing complexity and potential errors.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient PCB assembly, saving time and effort during manufacturing.

Maximum VCEsat: 0.3 V

Low VCEsat voltage results in minimal power dissipation and improved efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular package shape offers easy handling and mounting on PCBs, enhancing overall design flexibility.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections, reducing the risk of intermittent connections or failures.

No. of Terminals: 3

Three terminals simplify circuit connections and reduce complexity, making it easier to integrate the transistor into various circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, allowing for compact and efficient designs in electronics products.

Minimum DC Current Gain (hFE): 380

High minimum DC current gain ensures stable and consistent amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows the transistor to withstand elevated temperatures, increasing its reliability and versatility.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance reduces feedback effects and improves high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides a wide operating voltage range, accommodating different circuit requirements.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and reliability, ensuring consistent performance over a wide range of operating conditions.

Maximum Collector Current (IC): 0.2 A

High maximum collector current rating allows for reliable operation in various amplifier applications without risk of damage or overheating.

Terminal Position: DUAL

Dual terminal position simplifies circuit connections and offers versatility in PCB layout and design.

Nominal Transition Frequency (fT): 125 MHz

High nominal transition frequency enables the transistor to operate efficiently at higher frequencies, making it suitable for high-speed amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX70KT216 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

380

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BCX70KT216 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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