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YES Small Signal Bipolar Junction Transistors (BJT) 1,507

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCW68GE6327HTSA1 by Infineon Technologies

BCW68GE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

.8 A

45 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCR133WE6327HTSA1 by Infineon Technologies

BCR133WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

130 MHz

PZTA42E6327HTSA1 by Infineon Technologies

PZTA42E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

.5 A

300 V

SINGLE

40

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SILICON

70 MHz

SMBTA06E6327HTSA1 by Infineon Technologies

SMBTA06E6327HTSA1

Infineon Technologies

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BC846BWE6327HTSA1 by Infineon Technologies

BC846BWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

65 V

SINGLE

200

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BC857BE6327HTSA1 by Infineon Technologies

BC857BE6327HTSA1

Infineon Technologies

BC857BE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and IC of 0.1A. It is used for switching applications in surface mount designs due to its high transition frequency of 250MHz. The package style is small outline with Gull Wing terminals, suitable for compact electronic devices.

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC857CE6327HTSA1 by Infineon Technologies

BC857CE6327HTSA1

Infineon Technologies

Infineon's BC857CE6327HTSA1 is a PNP BJT transistor with hFE of 420, Vce of 45V, and Ic of 0.1A. Ideal for switching applications, it operates at up to 150°C with a transition frequency of 250MHz. This surface-mount device has a gull wing terminal form in a small outline package.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCX55E6327HTSA1 by Infineon Technologies

BCX55E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;

COLLECTOR

1 A

60 V

SINGLE

40

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BC847BWE6433HTMA1 by Infineon Technologies

BC847BWE6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC847CWE6433HTMA1 by Infineon Technologies

BC847CWE6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC848AE6327HTSA1 by Infineon Technologies

BC848AE6327HTSA1

Infineon Technologies

BC848AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with a min DC current gain of 110 and max collector-emitter voltage of 30V. It is designed for switching applications, featuring a surface mount package style with Gull Wing terminals. With a nominal transition frequency of 250MHz, it is suitable for high-frequency electronic circuits.

.1 A

30 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC849BE6327HTSA1 by Infineon Technologies

BC849BE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

30 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC849CWE6327HTSA1 by Infineon Technologies

BC849CWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC850BE6327HTSA1 by Infineon Technologies

BC850BE6327HTSA1

Infineon Technologies

BC850BE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 200, VCE of 45V, and IC of 0.1A. It is used for switching applications in small outline packages with Gull Wing terminals. The transistor element is made of silicon and has a transition frequency of 250MHz.

LOW NOISE

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC850BWE6327HTSA1 by Infineon Technologies

BC850BWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC850CWE6327HTSA1 by Infineon Technologies

BC850CWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC857CWE6433HTMA1 by Infineon Technologies

BC857CWE6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 40;

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC857SE6433HTMA1 by Infineon Technologies

BC857SE6433HTMA1

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

45 V

SEPARATE, 2 ELEMENTS

125

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC858BWE6327HTSA1 by Infineon Technologies

BC858BWE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

30 V

SINGLE

220

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC858CE6327HTSA1 by Infineon Technologies

BC858CE6327HTSA1

Infineon Technologies

BC858CE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 420 and Vce of 30V. Ideal for switching applications, it has a max IC of 0.1A and fT of 250MHz. This surface-mount device in a small outline package is designed for high-speed operations.

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC860BWE6327HTSA1 by Infineon Technologies

BC860BWE6327HTSA1

Infineon Technologies

BC860BWE6327HTSA1 by Infineon Technologies is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a min DC current gain of 220. It is commonly used for switching applications due to its surface mount capability and high transition frequency of 250MHz.

LOW NOISE

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC860CWE6327HTSA1 by Infineon Technologies

BC860CWE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BCP51E6327HTSA1 by Infineon Technologies

BCP51E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

BCP54E6327HTSA1 by Infineon Technologies

BCP54E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCR116E6433HTMA1 by Infineon Technologies

BCR116E6433HTMA1

Infineon Technologies

Infineon's BCR116E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 160MHz. This small outline transistor in plastic/epoxy package with gull wing terminals is ideal for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

160 MHz

BCR135E6433HTMA1 by Infineon Technologies

BCR135E6433HTMA1

Infineon Technologies

Infineon's BCR135E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 150MHz. Its Gull Wing terminals and small outline make it suitable for surface mount designs in various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCR141E6433HTMA1 by Infineon Technologies

BCR141E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

BCR142WE6327HTSA1 by Infineon Technologies

BCR142WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 2.1363

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

150 MHz

BCR148E6327HTSA1 by Infineon Technologies

BCR148E6327HTSA1

Infineon Technologies

Infineon's BCR148E6327HTSA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and IC of 0.07A. With a max temp of 150°C, this silicon transistor in gull wing package is ideal for high-frequency switching circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR148E6433HTMA1 by Infineon Technologies

BCR148E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO IS 1

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR158E6327HTSA1 by Infineon Technologies

BCR158E6327HTSA1

Infineon Technologies

Infineon BCR158E6327HTSA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR162E6327HTSA1 by Infineon Technologies

BCR162E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR166E6327HTSA1 by Infineon Technologies

BCR166E6327HTSA1

Infineon Technologies

BCR166E6327HTSA1 by Infineon is a PNP BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 70 and can handle a max collector-emitter voltage of 50V. With a nominal transition frequency of 160MHz, this surface-mount transistor comes in a small outline package ideal for compact designs.

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

BCR166E6433HTMA1 by Infineon Technologies

BCR166E6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

160 MHz

BCR183E6433HTMA1 by Infineon Technologies

BCR183E6433HTMA1

Infineon Technologies

Infineon's BCR183E6433HTMA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

200 MHz

BCR185E6327HTSA1 by Infineon Technologies

BCR185E6327HTSA1

Infineon Technologies

Infineon Technologies' BCR185E6327HTSA1 is a PNP BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 70, max collector-emitter voltage of 50V, and nominal transition frequency of 200MHz. This surface-mount transistor comes in a small outline package with gull wing terminals.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR185E6433HTMA1 by Infineon Technologies

BCR185E6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

200 MHz

BCR192E6327HTSA1 by Infineon Technologies

BCR192E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 2.1363

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR521E6327HTSA1 by Infineon Technologies

BCR521E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCV29E6327HTSA1 by Infineon Technologies

BCV29E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

COLLECTOR

.5 A

30 V

DARLINGTON

4000

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

FLAT

SINGLE

NOT SPECIFIED

SILICON

150 MHz

BCV47E6433HTMA1 by Infineon Technologies

BCV47E6433HTMA1

Infineon Technologies

BCV47E6433HTMA1 by Infineon is a NPN Darlington BJT with 2000 hFE, 60V VCE, and 170MHz fT. Ideal for applications requiring high current gain and voltage amplification in compact electronic devices due to its small outline package and surface mount capability.

.5 A

60 V

DARLINGTON

2000

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

170 MHz

BCW60BE6327HTSA1 by Infineon Technologies

BCW60BE6327HTSA1

Infineon Technologies

Infineon BCW60BE6327HTSA1 is a NPN BJT transistor with hFE of 70, VCE of 32V, and fT of 250MHz. Ideal for switching applications due to its small outline package style and Gull Wing terminals. Suitable for surface mount designs requiring low collector current (0.1A).

.1 A

32 V

SINGLE

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCW60CE6327HTSA1 by Infineon Technologies

BCW60CE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

.1 A

32 V

SINGLE

90

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCW60DE6327HTSA1 by Infineon Technologies

BCW60DE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

.1 A

32 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCW61AE6327HTSA1 by Infineon Technologies

BCW61AE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

.1 A

32 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCW61BE6327HTSA1 by Infineon Technologies

BCW61BE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

.1 A

32 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCW61DE6327HTSA1 by Infineon Technologies

BCW61DE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 32 V;

.1 A

32 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCW67BE6327HTSA1 by Infineon Technologies

BCW67BE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;

.8 A

32 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz