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1 W Small Signal Bipolar Junction Transistors (BJT) 87

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2DB1424R-13 by Diodes Incorporated

2DB1424R-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

220 MHz

2DD1621T-13 by Diodes Incorporated

2DD1621T-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

25 V

SINGLE

65

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

300 MHz

DCP68-25-13 by Diodes Incorporated

DCP68-25-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

330 MHz

.5 V

DCX69-25-13 by Diodes Incorporated

DCX69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DNLS412E-13 by Diodes Incorporated

DNLS412E-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

12 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DPLS315E-13 by Diodes Incorporated

DPLS315E-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

15 V

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2DD2098R-13 by Diodes Incorporated

2DD2098R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

220 MHz

MPSW92RLRAG by Onsemi

MPSW92RLRAG

Onsemi

MPSW92RLRAG by Onsemi is a PNP BJT with 1W power dissipation, 300V max. collector-emitter voltage, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low collector current of 0.5A. The through-hole package with bottom terminal position makes it easy to integrate into various circuit designs.

.5 A

300 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW92G by Onsemi

MPSW92G

Onsemi

MPSW92G by Onsemi is a PNP BJT transistor with 1W power dissipation, 300V max collector-emitter voltage, and 50MHz transition frequency. Ideal for switching applications in electronics due to its high current gain and operating temperature up to 150 °C.

.5 A

300 V

SINGLE

25

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

MPS6726G by Onsemi

MPS6726G

Onsemi

MPS6726G by Onsemi is a PNP BJT transistor with 1W power dissipation, 30V max. collector-emitter voltage, and 50MHz fT. Ideal for amplifier applications due to its single configuration and hFE of 50. Packaged in cylindrical shape with through-hole terminals for easy installation.

1 A

30 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW06G by Onsemi

MPSW06G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

60

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW06RLRAG by Onsemi

MPSW06RLRAG

Onsemi

MPSW06RLRAG by Onsemi is a NPN BJT transistor with 80V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in cylindrical form with through-hole terminals for easy integration.

.5 A

80 V

SINGLE

60

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW56RLRAG by Onsemi

MPSW56RLRAG

Onsemi

MPSW56RLRAG by Onsemi is a PNP BJT with 80V VCEO, 50MHz fT, and 1W power dissipation. Ideal for amplifier applications due to its single configuration and hFE of 50. Its through-hole terminals and cylindrical package make it suitable for various electronic designs.

.5 A

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

BC212BG by Onsemi

BC212BG

Onsemi

BC212BG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1W, and hFE of 60. Ideal for amplifier applications, it has a max operating temp of 150 °C and VCE of 50V.

.1 A

50 V

SINGLE

60

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

280 MHz

BC212BRL1G by Onsemi

BC212BRL1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

EUROPEAN PART NUMBER

.1 A

50 V

SINGLE

60

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

280 MHz

BDC01DRL1G by Onsemi

BDC01DRL1G

Onsemi

BDC01DRL1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1W, hFE of 25, and VCEO of 100V. With a package style of cylindrical and operating temp up to 150 °C, it offers high performance in various electronic circuits.

EUROPEAN PART NUMBER

.5 A

100 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPS6724G by Onsemi

MPS6724G

Onsemi

MPS6724G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers in electronic circuits.

1 A

40 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPS6724RLRAG by Onsemi

MPS6724RLRAG

Onsemi

MPS6724RLRAG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V max collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its 4000 min hFE. Package style is cylindrical with through-hole terminals.

1 A

40 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPS6725G by Onsemi

MPS6725G

Onsemi

MPS6725G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.

1 A

50 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPS6725RLRPG by Onsemi

MPS6725RLRPG

Onsemi

MPS6725RLRPG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.

1 A

50 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPS6727G by Onsemi

MPS6727G

Onsemi

MPS6727G by Onsemi is a PNP BJT with 1W power dissipation, 40V max. collector-emitter voltage, and 50MHz transition frequency. Ideal for amplifier applications due to its single configuration and through-hole terminal form in a cylindrical package style.

1 A

40 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPS6729G by Onsemi

MPS6729G

Onsemi

MPS6729G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1W, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its single configuration and silicon element material, operating at up to 150 °C with a min DC current gain of 50 (hFE).

.5 A

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW05G by Onsemi

MPSW05G

Onsemi

The Onsemi MPSW05G is a NPN BJT transistor with 60V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in a cylindrical shape with through-hole terminals for easy installation.

.5 A

60 V

SINGLE

60

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW13RLRAG by Onsemi

MPSW13RLRAG

Onsemi

MPSW13RLRAG by Onsemi is a NPN Darlington BJT with 1A IC, 125MHz fT, and 10000 hFE. Ideal for applications requiring high current gain and frequency response in through-hole configurations. Suitable for amplification circuits in electronic devices due to its high power dissipation of 1W and operating temperature up to 150 °C.

1 A

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

125 MHz

MPSW45RLREG by Onsemi

MPSW45RLREG

Onsemi

MPSW45RLREG by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and max IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.

1 A

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPSW51G by Onsemi

MPSW51G

Onsemi

MPSW51G by Onsemi is a PNP BJT with 1W power dissipation, 30V max collector-emitter voltage, and 50MHz transition frequency. Ideal for low-power applications requiring high DC current gain in a cylindrical package with through-hole terminals.

1 A

30 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW51AG by Onsemi

MPSW51AG

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW51ARLRAG by Onsemi

MPSW51ARLRAG

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW51ARLRPG by Onsemi

MPSW51ARLRPG

Onsemi

MPSW51ARLRPG by Onsemi is a PNP BJT with 1W power dissipation, hFE of 50, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and max. operating temp. of 150°C. Package style: cylindrical, terminals: through-hole with tin silver copper finish.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW63G by Onsemi

MPSW63G

Onsemi

MPSW63G by Onsemi is a PNP BJT with 1W power dissipation, hFE of 10000, and IC of 0.5A. Ideal for applications requiring high DC current gain like amplifiers or signal processing circuits due to its Darlington configuration and SILICON material.

.5 A

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

125 MHz

MPSW63RLRAG by Onsemi

MPSW63RLRAG

Onsemi

MPSW63RLRAG by Onsemi is a PNP Darlington BJT with 3 terminals. It features a max power dissipation of 1W, hFE of 10000, and fT of 125MHz. Ideal for applications requiring high current gain and frequency amplification in electronic circuits.

.5 A

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

125 MHz

STL72 by STMicroelectronics

STL72

STMicroelectronics

STL72 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

MPSW45G by Onsemi

MPSW45G

Onsemi

MPSW45G by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.

1 A

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

2STX1360 by STMicroelectronics

2STX1360

STMicroelectronics

2STX1360 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient signal processing in compact electronic devices.

3 A

60 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

785 ns

120 ns

DZT955-13 by Diodes Incorporated

DZT955-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

140 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

2DA1213O-13 by Diodes Incorporated

2DA1213O-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

50 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

160 MHz

ZXTN26070CV-7 by Diodes Incorporated

ZXTN26070CV-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

70 V

SINGLE

75

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

200 MHz

APT13003NZTR-G1 by Diodes Incorporated

APT13003NZTR-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

530 V

SINGLE

5

TO-92

O-PBCY-W3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

1 W

MIL-STD-202

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

4 MHz

4150 ns

1000 ns

.4 V

FCX493QTA by Diodes Incorporated

FCX493QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

10 pF

100 V

SINGLE

20

R-PSSO-F3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

150 MHz

.6 V