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1 W Small Signal Bipolar Junction Transistors (BJT) 87

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX1149ASTOB by Diodes Incorporated

ZTX1149ASTOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1 W

NO

WIRE

SINGLE

SILICON

135 MHz

.3 V

ZTX1149ASTZ by Diodes Incorporated

ZTX1149ASTZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

135 MHz

.3 V

ZTX1051ASTOB by Diodes Incorporated

ZTX1051ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1051ASTZ by Diodes Incorporated

ZTX1051ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1048ASTOB by Diodes Incorporated

ZTX1048ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTOA by Diodes Incorporated

ZTX1048ASTOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTZ by Diodes Incorporated

ZTX1048ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SWITCHING

SILICON

150 MHz

.245 V

CE2A3Q-T-AZ by Renesas Electronics

CE2A3Q-T-AZ

Renesas Electronics

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;

2 A

500

1

NPN

1 W

BIP General Purpose Small Signal

NO

SILICON

2SA2127-AE by Onsemi

2SA2127-AE

Onsemi

2SA2127-AE by Onsemi is a PNP BJT transistor with max. power dissipation of 1W, max. collector-emitter voltage of 50V, and max. collector current of 2A. Ideal for switching applications due to its single configuration and cylindrical package style, it has a min DC current gain of 40 and operates up to 150°C.

2 A

50 V

SINGLE

40

TO-226AE

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

1 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

420 MHz

STBV42-AP by STMicroelectronics

STBV42-AP

STMicroelectronics

STBV42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G-AP by STMicroelectronics

STBV42G-AP

STMicroelectronics

STBV42G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G by STMicroelectronics

STBV42G

STMicroelectronics

STBV42G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42 by STMicroelectronics

STBV42

STMicroelectronics

STBV42 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1W and max. collector current of 1A, suitable for low-power circuits in various electronic devices. The package style is cylindrical with matte tin terminal finish, making it easy to integrate into through-hole PCB designs.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2STL1525 by STMicroelectronics

2STL1525

STMicroelectronics

2STL1525 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its cylindrical package ensures easy integration in various circuits.

5 A

25 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

120 MHz

PMEM4020ND,115 by NXP Semiconductors

PMEM4020ND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Terminal Form: GULL WING;

2 A

40 V

SINGLE WITH BUILT-IN DIODE

75

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DZT491-13 by Diodes Incorporated

DZT491-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DCP51-13 by Diodes Incorporated

DCP51-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP51-16-13 by Diodes Incorporated

DCP51-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-13 by Diodes Incorporated

DCP54-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-16-13 by Diodes Incorporated

DCP54-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-13 by Diodes Incorporated

DCP56-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-16-13 by Diodes Incorporated

DCP56-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DZT591C-13 by Diodes Incorporated

DZT591C-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

2DB1188P-13 by Diodes Incorporated

2DB1188P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

120 MHz

2DD1664P-13 by Diodes Incorporated

2DD1664P-13

Diodes Incorporated

2DD1664P-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 82, and fT of 280MHz. Ideal for switching applications, it has a max collector-emitter voltage of 32V and max collector current of 1A. Suitable for surface mount with single terminal position in small outline package style.

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

280 MHz

2DD2150R-13 by Diodes Incorporated

2DD2150R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

160 MHz

2DB1132P-13 by Diodes Incorporated

2DB1132P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1132Q-13 by Diodes Incorporated

2DB1132Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1386Q-13 by Diodes Incorporated

2DB1386Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .005 A;

COLLECTOR

.005 A

20 V

SINGLE

120

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

100 MHz

2DD1766P-13 by Diodes Incorporated

2DD1766P-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .002 A;

COLLECTOR

.002 A

32 V

SINGLE

82

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

2DD1766Q-13 by Diodes Incorporated

2DD1766Q-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .002 A;

COLLECTOR

.002 A

32 V

SINGLE

120

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

2DD1766R-13 by Diodes Incorporated

2DD1766R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .002 A;

COLLECTOR

.002 A

32 V

SINGLE

180

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

DCX51-13 by Diodes Incorporated

DCX51-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX51-16-13 by Diodes Incorporated

DCX51-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX52-13 by Diodes Incorporated

DCX52-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DCX52-16-13 by Diodes Incorporated

DCX52-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DCX53-13 by Diodes Incorporated

DCX53-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX53-16-13 by Diodes Incorporated

DCX53-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX54-13 by Diodes Incorporated

DCX54-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX54-16-13 by Diodes Incorporated

DCX54-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

200 MHz

DCX55-13 by Diodes Incorporated

DCX55-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

60 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX55-16-13 by Diodes Incorporated

DCX55-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

60 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX56-13 by Diodes Incorporated

DCX56-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX56-16-13 by Diodes Incorporated

DCX56-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX69-16-13 by Diodes Incorporated

DCX69-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DXT3150-13 by Diodes Incorporated

DXT3150-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .005 A;

COLLECTOR

.005 A

25 V

SINGLE

250

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

2DB1119S-13 by Diodes Incorporated

2DB1119S-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

25 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

200 MHz

DZT658-13 by Diodes Incorporated

DZT658-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;

COLLECTOR

.5 A

10 pF

400 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

.5 V