Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AOWF4S60
Alpha & Omega Semiconductor
AOWF4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 25W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
SINGLE
4 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
25 W
FET General Purpose Power
NO
PSMN023-40YLCX
NXP Semiconductors
PSMN023-40YLCX by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 24 A, dissipates up to 25 W, and operates at temperatures up to 175 °C. Ideal for applications in power supplies and motor control.
24 A
175 Cel
YES
STF11N65M5
STMicroelectronics
STF11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 36A IDM, and 0.48 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. Operating temp ranges from -55 to 150 °C with 25W max power dissipation.
130 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
650 V
9 A
.48 ohm
TO-220AB
R-PSFM-T3
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
36 A
THROUGH-HOLE
SWITCHING
SILICON
STF18N65M5
STF18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 60A IDM, and 0.22 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
210 mJ
15 A
.22 ohm
60 A
BSZ165N04NSGATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; No. of Terminals: 8; Maximum Pulsed Drain Current (IDM): 124 A;
5 mJ
DRAIN
40 V
31 A
.0165 ohm
R-PDSO-F8
e3
8
SMALL OUTLINE
124 A
Not Qualified
FET General Purpose Powers
TIN
FLAT
DUAL
STF6N80K5
STF6N80K5 by STMicroelectronics is a N-CHANNEL FET with 4.5A max drain current and 25W power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power supplies or motor control systems operating up to 150 °C.
4.5 A
STF25N10F7
STF25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 76A IDM, and 0.035 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
100 V
19 A
.035 ohm
19 pF
76 A
2SJ649-AZ
Renesas Electronics
The Renesas Electronics 2SJ649-AZ is a P-CHANNEL FET with max drain current of 20A and power dissipation of 25W. Ideal for applications requiring high power handling in a single configuration, such as power supplies or motor control systems. Operating up to 150°C, it offers reliability and performance under demanding conditions.
20 A
260
P-CHANNEL
Other Transistors
10
IRF630FP
The STMicroelectronics IRF630FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 25W, this transistor has a 0.4 ohm Drain-Source On Resistance and can handle up to 9A drain current.
160 mJ
200 V
.4 ohm
MATTE TIN
STF4N62K3
STF4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 25W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
620 V
3.8 A
1.95 ohm
15.2 A
STF6N52K3
STF6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current, 110mJ Avalanche Energy Rating, and 1.2ohm Max Drain-Source On Resistance. This METAL-OXIDE SEMICONDUCTOR transistor operates at up to 150 °C and has a power dissipation of 25W in a FLANGE MOUNT package.
ULTRA-LOW RESISTANCE
110 mJ
525 V
5 A
1.2 ohm
STF19NF20
STF19NF20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 110mJ EAS, and 0.16 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 25W at 150°C.
.16 ohm
STF9NM50N
STF9NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 7.5A. It operates in enhancement mode with a low on-resistance of 0.56Ω. Ideal for high-efficiency power management solutions.
150 mJ
500 V
7.5 A
.56 ohm
30 A
STF13NM50N
STF13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It offers a low on-resistance of 0.32Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
200 mJ
12 A
.32 ohm
48 A
STF12NM60N
STF12NM60N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 10A max drain current. It operates in enhancement mode with a low on-resistance of 0.41Ω. Ideal for high-efficiency power management solutions.
600 V
10 A
.41 ohm
40 A
STF17NF25
STF17NF25 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
100 mJ
250 V
17 A
.165 ohm
68 A
STP5NK65ZFP
STP5NK65ZFP from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 18A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
170 mJ
1.8 ohm
18 A
STF8NM60N
STF8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-efficiency power management solutions.
7 A
.65 ohm
28 A
STF5NK52ZD
STF5NK52ZD from STMicroelectronics is a single N-channel FET designed for efficient power management. It supports a max drain current of 4.4 A and power dissipation up to 25 W, making it ideal for high-temperature applications up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
4.4 A
STP11NM60ND
STP11NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM, 200mJ EAS, and 0.45 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor has a RECTANGULAR package style with THROUGH-HOLE terminals and METAL-OXIDE SEMICONDUCTOR technology.
.45 ohm
STF7N52K3
STF7N52K3 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.3 A and a breakdown voltage of 525 V. It operates in enhancement mode with a power dissipation of 25 W. Ideal for high-temperature environments, it supports efficient circuit designs.
6.2 A
6.3 A
.98 ohm
25 A
PHX9NQ20T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 5.2 A;
93 mJ
5.2 A
21 A
STF10NM65N
STF10NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. Its compact design ensures efficient thermal management in various electronic circuits.
300 mJ
STF13NM60N-H
STF13NM60N-H from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 11A max drain current. It offers a low on-resistance of 0.36Ω and operates at up to 150 °C. This versatile FET is packaged in a flange mount design for easy integration.
11 A
.36 ohm
44 A
STP16NF06FP
STP16NF06FP from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 11 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for efficient power management in various electronic circuits.
60 V
.1 ohm
FQD5P10TF
Fairchild Semiconductor
FQD5P10TF by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 14.4A IDM, and 1.05 ohm RDS(on). With a max power dissipation of 25W and operating temperature up to 150°C, it's ideal for high-power switching circuits in various electronic devices.
55 mJ
3.6 A
1.05 ohm
TO-252
R-PSSO-G2
2
14.4 A
GULL WING
STP7NK40ZFP
STP7NK40ZFP from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 400V breakdown voltage, 5.4A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
400 V
5.4 A
1 ohm
21.6 A
STP14NF12FP
STP14NF12FP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8.5 A, a breakdown voltage of 120 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
60 mJ
120 V
8.5 A
.18 ohm
34 A
SPD02N50C3
Infineon's SPD02N50C3 is a N-CHANNEL FET with 500V DS Breakdown Voltage, 5.4A IDM, and 25W Power Dissipation. Ideal for power applications requiring high voltage tolerance and current handling capabilities in compact designs.
50 mJ
1.8 A
3 ohm
TO-252AA
STP36NF06FP
STP36NF06FP from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 18 A, breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for efficient power management in various electronic devices.
.04 ohm
72 A
STF3HNK90Z
STF3HNK90Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 900V breakdown voltage and 12A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. This robust transistor ensures reliable performance in high-temperature environments up to 150 °C.
900 V
3 A
4.2 ohm
STF8NM60ND
STF8NM60ND by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-efficiency power management solutions.
.7 ohm
STF20N20
STF20N20 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 200V breakdown voltage and max drain current of 18A. It has a low on-resistance of 0.125Ω and operates at up to 150 °C. This versatile transistor is suitable for various power management tasks.
.125 ohm
STF40NF03L
STF40NF03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 23 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Its compact design ensures efficient performance in various electronic circuits.
LOW THRESHOLD
250 mJ
30 V
23 A
92 A
STF12NM50N
STF12NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 44A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
350 mJ
.38 ohm
SQJ962EP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SQJ962EP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 32A IDM, and 0.06 ohm RDS(on). Ideal for power management applications requiring high drain current handling in compact designs. Operates in enhancement mode with built-in diode elements, suitable for surface mount assembly with Gull Wing terminals.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
8 A
.06 ohm
R-PSSO-G4
4
32 A
40
SPS02N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Pulsed Drain Current (IDM): 5.4 A; Package Shape: RECTANGULAR;
TO-251
R-PSIP-T3
IN-LINE
STF11NM50N
STF11NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. Its compact design ensures efficient thermal management in various electronic circuits.
.47 ohm
STF18N55M5
STF18N55M5 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 550V breakdown voltage, 52A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
550 V
13 A
.24 ohm
52 A
STF5N52K3
STF5N52K3 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 525V breakdown voltage and a max drain current of 4.4A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-temperature environments, it supports efficient circuit designs.
1.5 ohm
17.6 A
STF5N52U
STF5N52U by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 525V breakdown voltage and a max drain current of 4.4A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
STF12NM50ND
STF12NM50ND by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 44A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STF10NM50N
STF10NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-temperature environments, it supports efficient energy management.
143 mJ
.63 ohm
STF5N95K3
STF5N95K3 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 950V breakdown voltage and 4A max drain current. It operates in enhancement mode with a power dissipation of up to 25W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
950 V
3.5 ohm
16 A
STF7N52DK3
STF7N52DK3 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 525V breakdown voltage and a max drain current of 6.2A. It operates in enhancement mode with a power dissipation of 25W. This versatile transistor is suitable for various electronic circuits.
6 A
1.15 ohm
STF8N65M5
STF8N65M5 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 650V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-efficiency power management solutions.
120 mJ
.6 ohm
STF11NM60N
STF11NM60N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STF7NM80
STF7NM80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.5 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 25 W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
240 mJ
800 V
6.5 A
26 A
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