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25 W Power Field Effect Transistors (FET) 51

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STF11N50M2 by STMicroelectronics

STF11N50M2

STMicroelectronics

STF11N50M2 by STMicroelectronics is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 8 A and power dissipation of 25 W, operating up to 150 °C. This transistor is perfect for efficient switching in various electronic devices.

SINGLE

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

25 W

FET General Purpose Power

NO

NOT SPECIFIED

STF5N105K5 by STMicroelectronics

STF5N105K5

STMicroelectronics

STF5N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 3 A, dissipates up to 25 W, and operates at temperatures up to 150 °C. This FET is perfect for efficient switching in various electronic circuits.

SINGLE

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

25 W

FET General Purpose Power

NO

NOT SPECIFIED

STF9N80K5 by STMicroelectronics

STF9N80K5

STMicroelectronics

STF9N80K5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 800V, a pulsed drain current of 28A, and operates from -55 °C to 150 °C. Ideal for power management in various electronic circuits.

ISOLATED

SINGLE WITH BUILT-IN DIODE

800 V

7 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

.65 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

25 W

28 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON