Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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TK20J60U(F)
Toshiba
Toshiba's TK20J60U(F) is an N-CHANNEL Power FET with 20A Drain Current and 190W Power Dissipation. Ideal for high-power applications, it operates in Enhancement Mode at up to 150°C, making it suitable for power supplies and motor control systems.
SINGLE
20 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
190 W
FET General Purpose Power
NO
STW15N80K5
STMicroelectronics
STW15N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 14A max drain current, 0.375 ohm max on resistance, and 56A pulsed drain current. The transistor operates in enhancement mode with a max power dissipation of 190W at 150°C.
SINGLE WITH BUILT-IN DIODE
800 V
14 A
.375 ohm
TO-247
R-PSFM-T3
e3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
56 A
Matte Tin (Sn)
THROUGH-HOLE
SWITCHING
SILICON
STP36N55M5
STP36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A Drain Current, 0.08 ohm On Resistance, and 190W Power Dissipation in a RECTANGULAR package. Operating at up to 150°C, it offers reliable performance in various industrial settings.
DRAIN
550 V
33 A
.08 ohm
TO-220AB
132 A
STP38N65M5
STP38N65M5 by STMicroelectronics is a Power FET with 650V DS Breakdown Voltage, 120A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
660 mJ
ISOLATED
650 V
30 A
.095 ohm
NOT SPECIFIED
120 A
FET General Purpose Powers
STW36N55M5
STW36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, 33A Drain Current, and 0.08 ohm On Resistance. Ideal for SWITCHING applications due to its 132A Pulsed Drain Current capability. Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W at 150 °C.
STB32NM50N
STB32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 190W max power dissipation. The transistor features a built-in diode, GULL WING terminals, and can withstand up to 150 °C operating temperature.
340 mJ
500 V
22 A
.13 ohm
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
245
88 A
YES
Matte Tin (Sn) - annealed
GULL WING
30
STP32NM50N
STP32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 88A IDM, 340mJ EAS, and 0.13 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
STW32NM50N
STW32NM50N by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C temperature.
STW36NM60ND
STW36NM60ND by STMicroelectronics is a N-CHANNEL FET with 29A max drain current and 190W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR technology.
29 A
STP28NM60ND
STP28NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 92A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications due to its 190W power dissipation and ENHANCEMENT MODE operation.
50 mJ
600 V
23 A
.15 ohm
92 A
STW28NM60ND
STW28NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 92A IDM, 50mJ EAS, and 0.15ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a RECTANGULAR package style with FLANGE MOUNT and DRAIN case connection.
STI33N60M2
STI33N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 104A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 190W, -50 to 150 °C operating temperature range, and 0.125 ohm Drain-Source On Resistance.
450 mJ
26 A
.125 ohm
2.5 pF
R-PSIP-T3
-50 Cel
IN-LINE
104 A
STB26NM60ND
STB26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 84A max pulsed drain current and 0.175 ohm max drain-source resistance. Operating in enhancement mode, it has a 190W power dissipation rating and can withstand up to 150°C temperature.
100 mJ
21 A
.175 ohm
84 A
STP26NM60ND
STP26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 84A max pulsed drain current and 0.175 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 190W and can handle up to 150 °C temperature.
STW26NM60ND
STW26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 84A max pulsed drain current, 100mJ avalanche energy rating, and 0.175 ohm max on-resistance. Operating in enhancement mode, it has a max power dissipation of 190W and can handle up to 150°C operating temperature.
STW13NB60
STW13NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 700mJ EAS, and 0.54 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
AVALANCHE RATED
700 mJ
13 A
.54 ohm
52 A
Not Qualified
MATTE TIN
STW8NB100
STW8NB100 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 29.2A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
1000 V
8 A
7.3 A
1.45 ohm
TO-247AC
29.2 A
STW11NB80
STW11NB80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 11 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 190 W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
500 mJ
11 A
.8 ohm
44 A
STW15NB50
STW15NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for SWITCHING applications. It features 58.4A max pulsed drain current and 850mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 190W and can handle up to 150 °C operating temperature.
850 mJ
14.6 A
.36 ohm
58.4 A
FQA19N20L
Fairchild Semiconductor
FQA19N20L by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 100A and EAS of 250mJ, making it suitable for high-power operations. With a 0.14 ohm RDS(on), this MOSFET offers efficient performance in ENHANCEMENT MODE at up to 150°C.
250 mJ
200 V
25 A
.14 ohm
100 A
STB30NM60ND
STB30NM60ND from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and 190W power dissipation. Ideal for high-performance power management in compact designs.
900 mJ
.385 ohm
STP30NM60ND
STP30NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW30NM60ND
STW30NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STB30NM60N
STB30NM60N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
STI30NM60N
STI30NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-262AA
STP30NM60N
STP30NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW30NM60N
STW30NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 25A max drain current. It offers a low on-resistance of 0.13Ω and operates at up to 150 °C. This robust transistor is perfect for high-power circuits.
TIN
SPB80N06S2-09
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; JEDEC-95 Code: TO-263AB; Package Body Material: PLASTIC/EPOXY;
370 mJ
55 V
80 A
.0091 ohm
175 Cel
320 A
SPB80N06S2L-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Avalanche Energy Rating (EAS): 370 mJ; No. of Terminals: 2;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0113 ohm
SPP80N06S2-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Additional Features: AVALANCHE RATED; Maximum Drain-Source On Resistance: .0091 ohm;
e0
TIN LEAD
SPP80N06S2L-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Avalanche Energy Rating (EAS): 370 mJ; Maximum Pulsed Drain Current (IDM): 320 A;
STP17N62K3
STP17N62K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 620V breakdown voltage and 15A max drain current. It offers a compact through-hole design with built-in diode and operates at up to 150 °C. With a power dissipation of 190W, it's perfect for high-efficiency circuits.
AVALANCHE ENERGY RATED
315 mJ
620 V
15 A
.38 ohm
60 A
STW17N62K3
STW17N62K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 620V breakdown voltage and 15A max drain current. It offers a low on-resistance of 0.38Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
STB20NK50ZT4
STB20NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
17 A
.27 ohm
68 A
STI42N65M5
STI42N65M5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 33A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
950 mJ
.079 ohm
STP75NF68
STP75NF68 by STMicroelectronics is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 80 A and power dissipation of 190 W, operating up to 175 °C. Ideal for switching and amplification in various electronic circuits.
STB21NK50Z
STB21NK50Z by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STB30NM50N
STB30NM50N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It offers a low on-resistance of 0.115Ω and operates at up to 150 °C. Its compact design suits surface mount configurations.
27 A
.115 ohm
108 A
STP30NM50N
STP30NM50N from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 27A max drain current, and 190W power dissipation. Its robust design suits high-performance power management systems.
STW30NM50N
STW30NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It offers a low on-resistance of 0.115Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
STP16NK60Z
STP16NK60Z from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain-source voltage of 620V, supports up to 14A continuous current, and dissipates up to 190W. Ideal for high-efficiency power management in various electronic devices.
360 mJ
.42 ohm
STW16NK60Z
STW16NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 620V breakdown voltage, 14A max drain current, and 190W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STP16NK65Z
STP16NK65Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 52A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
350 mJ
.5 ohm
STB75N20
STB75N20 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 75 A, breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in compact designs.
205 mJ
75 A
.034 ohm
300 A
STP75N20
STP75N20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 300A IDM, and 0.034 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 190W and operates at temperatures up to 150°C.
STW75N20
STW75N20 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 75 A and a breakdown voltage of 200 V. It has a low on-resistance of 0.034 Ω and operates up to 150 °C. This robust transistor is suitable for high-power circuits.
STP80N20M5
STP80N20M5 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 65 A, a breakdown voltage of 200 V, and a low on-resistance of 0.02 Ω. This robust transistor operates efficiently in high-temperature environments up to 150 °C.
61 A
65 A
.02 ohm
260 A
STW18NM80
STW18NM80 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 68A max pulsed drain current, 600mJ avalanche energy rating, and 0.295 ohm max drain-source resistance. Suitable for high-power operations in various industries.
600 mJ
.295 ohm
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