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190 W Power Field Effect Transistors (FET) 52

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STP33N65M2 by STMicroelectronics

STP33N65M2

STMicroelectronics

STP33N65M2 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A Pulsed Drain Current, 780mJ Avalanche Energy Rating, and 0.14 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W and can withstand temperatures from -55 to 150 °C.

780 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

24 A

24 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

190 W

96 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STW33N60DM2 by STMicroelectronics

STW33N60DM2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Drain Current (ID): 24 A; Maximum Drain-Source On Resistance: .13 ohm;

570 mJ

SINGLE WITH BUILT-IN DIODE

600 V

24 A

24 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

190 W

96 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPI120N10S405AKSA1 by Infineon Technologies

IPI120N10S405AKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; JEDEC-95 Code: TO-262AA; Maximum Feedback Capacitance (Crss): 200 pF;

330 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

120 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

200 pF

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

190 W

480 A

AEC-Q101

YES

TIN

THROUGH-HOLE

SINGLE

SILICON

IPP120N10S405AKSA1 by Infineon Technologies

IPP120N10S405AKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Maximum Drain-Source On Resistance: .0053 ohm; JESD-609 Code: e3;

330 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

120 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

200 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

190 W

480 A

AEC-Q101

YES

TIN

THROUGH-HOLE

SINGLE

SILICON