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Everspin Technologies Other Function Memory ICs 28

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
MR256D08BMA45 by Everspin Technologies

MR256D08BMA45

Everspin Technologies

MR256D08BMA45 by Everspin Technologies is a 32KX8 memory circuit with a density of 262144 bits. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 45ns. This memory IC is suitable for various applications requiring high-speed data storage and retrieval.

45 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.008 Amp

Other Memory ICs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

40

8 mm

MR256A08BCMA35R by Everspin Technologies

MR256A08BCMA35R

Everspin Technologies

MR256A08BCMA35R by Everspin Technologies is a 32KX8 MEMORY CIRCUIT with 262144 bit Memory Density. Operating at 3.3V, it has a Max Access Time of 35ns and Industrial Temperature Grade. Suitable for applications requiring low profile, fine pitch GRID ARRAY packages in industrial environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BCMA35 by Everspin Technologies

MR256A08BCMA35

Everspin Technologies

MR256A08BCMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring low profile, fine pitch package style and asynchronous operation.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BCYS35R by Everspin Technologies

MR256A08BCYS35R

Everspin Technologies

MR256A08BCYS35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact package.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

3

1

44

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

MR256A08BCYS35 by Everspin Technologies

MR256A08BCYS35

Everspin Technologies

MR256A08BCYS35 by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, with a max access time of 35ns. This industrial-grade IC is ideal for applications requiring fast and reliable memory storage in compact spaces.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR256A08BMA35R by Everspin Technologies

MR256A08BMA35R

Everspin Technologies

MR256A08BMA35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for applications requiring low profile, fine pitch grid array packages in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BMA35 by Everspin Technologies

MR256A08BMA35

Everspin Technologies

MR256A08BMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for commercial applications requiring low profile, fine pitch grid array package style.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BSO35R by Everspin Technologies

MR256A08BSO35R

Everspin Technologies

MR256A08BSO35R by Everspin Tech is a 32Kx8 memory IC with CMOS tech. Operating at 3.3V, it has a max access time of 35ns and standby current of 0.007Amp. Ideal for applications requiring high-speed data storage in commercial-grade environments.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR256A08BSO35 by Everspin Technologies

MR256A08BSO35

Everspin Technologies

MR256A08BSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for commercial applications requiring small outline package style and asynchronous operation.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR256A08BYS35R by Everspin Technologies

MR256A08BYS35R

Everspin Technologies

MR256A08BYS35R by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at 3.3V, has a max access time of 35ns, and consumes up to 65mA. This small outline, thin profile package is ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR256A08BYS35 by Everspin Technologies

MR256A08BYS35

Everspin Technologies

MR256A08BYS35 by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at 3.3V, with a max access time of 35ns. This small outline, thin profile package is ideal for applications requiring high-speed memory solutions in commercial temperature environments.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR0A16AMA35R by Everspin Technologies

MR0A16AMA35R

Everspin Technologies

MR0A16AMA35R by Everspin Technologies is a 64KX16 memory IC with 1048576 bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package style. Ideal for applications requiring fast asynchronous memory with high capacity in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

16

1

48

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.012 Amp

SRAMs

155 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BCSO35 by Everspin Technologies

MR256A08BCSO35

Everspin Technologies

MR256A08BCSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring small outline package and asynchronous operation.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR2A16AMYS35R by Everspin Technologies

MR2A16AMYS35R

Everspin Technologies

MR2A16AMYS35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. Operating at 3.3V, it has a temperature range of -40 to 125°C and is AEC-Q100 compliant for automotive applications. This small outline, thin profile package with 44 terminals is ideal for high-performance asynchronous memory needs in automotive electronics.

R-PDSO-G44

18.41 mm

4194304 bit

MEMORY CIRCUIT

16

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

AEC-Q100

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR2A16AMYS35 by Everspin Technologies

MR2A16AMYS35

Everspin Technologies

MR2A16AMYS35 by Everspin Tech: 256KX16 memory IC with 4194304 bit density. Operating at -40 to 125 °C, it's AEC-Q100 graded for automotive applications. Features include 3.3V supply, small outline package, and dual terminal position.

R-PDSO-G44

18.41 mm

4194304 bit

MEMORY CIRCUIT

16

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

AEC-Q100

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR2A16AVMA35R by Everspin Technologies

MR2A16AVMA35R

Everspin Technologies

MR2A16AVMA35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, suitable for industrial applications. This low-profile, fine-pitch grid array package has 48 terminals and offers a memory density of 4,194,304 bits.

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

1.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR20H40CDFR by Everspin Technologies

MR20H40CDFR

Everspin Technologies

MR20H40CDFR by Everspin Technologies is a 512KX8 MEMORY IC with 4194304 bit Memory Density. Operating at 3.3V, it has a Max Supply Current of 46.5mA and can withstand temperatures from -40 to 85 °C. Ideal for industrial applications requiring high-speed synchronous memory solutions in a compact form factor.

R-PDSO-N8

6 mm

4194304 bit

MEMORY CIRCUIT

8

3

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

3.3

Not Qualified

.9 mm

.00075 Amp

SRAMs

46.5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

MR10Q010SCR by Everspin Technologies

MR10Q010SCR

Everspin Technologies

Everspin Technologies' MR10Q010SCR is a 128KX8 MEMORY CIRCUIT IC with 1048576 bit Memory Density. Operating at 3.3V, it features SYNCHRONOUS mode and has a small outline package style. Ideal for applications requiring high-speed memory access in commercial temperature environments.

R-PDSO-G16

10.34 mm

1048576 bit

MEMORY CIRCUIT

8

1

16

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.8,3.3

Not Qualified

2.64 mm

.005 Amp

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.52 mm

MR25H256MDC by Everspin Technologies

MR25H256MDC

Everspin Technologies

MR25H256MDC by Everspin Technologies is a 262144-bit MEMORY CIRCUIT with 32KX8 organization, operating at 3.3V. This SMALL OUTLINE IC has a temperature range of -40 to 125 °C and is AEC-Q100 compliant, suitable for AUTOMOTIVE applications requiring reliable synchronous memory solutions.

R-PDSO-N8

6 mm

262144 bit

MEMORY CIRCUIT

8

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

HSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG

NOT SPECIFIED

3/3.3

Not Qualified

AEC-Q100

1.05 mm

.00001 Amp

SRAMs

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

MR2A16ACMA35 by Everspin Technologies

MR2A16ACMA35

Everspin Technologies

MR2A16ACMA35 by Everspin: 256KX16 memory IC with 35ns access time, operates at 3.3V. Suitable for industrial applications, features low profile grid array package and CMOS technology.

35 ns

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.028 Amp

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

8 mm

MR0A08BCYS35R by Everspin Technologies

MR0A08BCYS35R

Everspin Technologies

MR0A08BCYS35R by Everspin Tech: 128KX8 memory IC with 1048576 bit density, operates at 3.3V, and has a max access time of 35 ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact small outline package.

35 ns

R-PDSO-G44

18.41 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

MR0A08BMA35 by Everspin Technologies

MR0A08BMA35

Everspin Technologies

Everspin Technologies' MR0A08BMA35 is a 128Kx8 memory IC with 1048576-bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package suitable for commercial applications.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

8 mm

MR0A08BYS35R by Everspin Technologies

MR0A08BYS35R

Everspin Technologies

MR0A08BYS35R by Everspin Technologies is a 128KX8 memory circuit with a CMOS technology. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 35ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval.

35 ns

R-PDSO-G44

18.41 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

44

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MR0A08BYS35 by Everspin Technologies

MR0A08BYS35

Everspin Technologies

MR0A08BYS35 by Everspin: 128KX8 memory IC with 3.3V supply, 35ns access time, and 1048576 bit density. Ideal for commercial applications requiring fast asynchronous operation in a small outline package.

35 ns

R-PDSO-G44

18.41 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

44

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MR2A08AMYS35R by Everspin Technologies

MR2A08AMYS35R

Everspin Technologies

Everspin Technologies' MR2A08AMYS35R is a 256Kx8 memory IC with 2097152 bit density. Operating at 3.3V, it has a max access time of 35ns and AEC-Q100 screening level for automotive applications. This small outline, thin profile package is ideal for asynchronous operations in automotive electronics with a temperature range from -40 to 125°C.

35 ns

R-PDSO-G44

18.41 mm

2097152 bit

MEMORY CIRCUIT

8

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

AEC-Q100

1.2 mm

.02 Amp

SRAMs

135 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR2A08AMYS35 by Everspin Technologies

MR2A08AMYS35

Everspin Technologies

MR2A08AMYS35 by Everspin Technologies is a 256Kx8 memory IC with CMOS technology. It operates at 3.3V, has a max access time of 35ns, and is AEC-Q100 screened for automotive applications. With a small outline package style and gull wing terminal form, it is suitable for various memory circuit needs in automotive electronics.

35 ns

R-PDSO-G44

18.41 mm

2097152 bit

MEMORY CIRCUIT

8

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

AEC-Q100

1.2 mm

.02 Amp

SRAMs

135 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR10Q010CMB by Everspin Technologies

MR10Q010CMB

Everspin Technologies

MR10Q010CMB by Everspin Technologies is a 128Kx8 memory IC with CMOS technology. Operating at 3.3V, it offers synchronous operation and industrial temperature grade suitability. With a package style of grid array and low profile, it is ideal for applications requiring high-speed data storage in compact spaces.

R-PBGA-B24

8 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

24

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

1.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

EMD3D256M08G1-150CBS1R by Everspin Technologies

EMD3D256M08G1-150CBS1R

Everspin Technologies

EMD3D256M08G1-150CBS1R by Everspin: 32MX8 memory IC with 268MB density, operates at 1.5V, synchronous mode. Ideal for applications requiring high-speed and reliable memory storage in compact devices.

R-PBGA-B78

13 mm

268435456 bit

MEMORY CIRCUIT

8

1

78

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm