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Micron Technology Flash Memory 937

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFDDAV512TDL-1AW12ABYY by Micron Technology

MTFDDAV512TDL-1AW12ABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; JESD-30 Code: R-XXMA-X; Surface Mount: NO; No. of Words Code: 512G;

R-XXMA-X

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

512GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

NO

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBK1T0TDP-1AT12AIYY by Micron Technology

MTFDHBK1T0TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBK1T0TDP-1AT12AIYY is a RECTANGULAR flash memory with 1TX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers high memory density of 8796093022208 bit. Ideal for industrial applications due to its wide temperature range from -40 to 95 °C.

R-XSMA-N

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

95 Cel

-40 Cel

1TX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDHBK256TDP-1AT12AIYY by Micron Technology

MTFDHBK256TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBK256TDP-1AT12AIYY is a RECTANGULAR flash memory with 256GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers a wide temperature range suitable for INDUSTRIAL applications. With MICROELECTRONIC ASSEMBLY package style, this CMOS technology-based device has a memory density of 2199023255552 bit.

R-XSMA-N

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

95 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDHBK512TDP-1AT12AIYY by Micron Technology

MTFDHBK512TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBK512TDP-1AT12AIYY is a RECTANGULAR flash memory with 512GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers 549755813888 words capacity suitable for INDUSTRIAL applications at temperatures ranging from -40 to 95 °C.

R-XSMA-N

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

95 Cel

-40 Cel

512GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDHBL064TDQ-1AT12ATYY by Micron Technology

MTFDHBL064TDQ-1AT12ATYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; Organization: 64GX8; Maximum Operating Temperature: 105 Cel; No. of Words: 68719476736 words;

R-XBGA-B

549755813888 bit

FLASH MODULE

8

1

68719476736 words

64G

ASYNCHRONOUS

105 Cel

-40 Cel

64GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL128TDP-1AT12AIYY by Micron Technology

MTFDHBL128TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBL128TDP-1AT12AIYY is a RECTANGULAR flash memory with 128GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it has an industrial temperature grade of -40 to 95 °C, making it suitable for high-performance applications.

R-XBGA-B

1099511627776 bit

FLASH MODULE

8

1

137438953472 words

128G

ASYNCHRONOUS

95 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL128TDQ-1AT12ATYY by Micron Technology

MTFDHBL128TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBL128TDQ-1AT12ATYY is a rectangular flash memory with 128GX8 organization and TLC NAND type. Operating in industrial temperature range (-40 to 105 °C), it offers 137B words capacity for various applications requiring high-density, asynchronous memory solutions.

R-XBGA-B

1099511627776 bit

FLASH MODULE

8

1

137438953472 words

128G

ASYNCHRONOUS

105 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL256TDP-1AT12AIYY by Micron Technology

MTFDHBL256TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBL256TDP-1AT12AIYY is a RECTANGULAR flash memory with 256GX8 organization, TLC NAND type. Operating in ASYNCHRONOUS mode, it has an industrial temperature grade of -40 to 95 °C. Ideal for high-density storage applications.

R-XBGA-B

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

95 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL256TDQ-1AT12ATYY by Micron Technology

MTFDHBL256TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBL256TDQ-1AT12ATYY is a RECTANGULAR Flash Memory with 256GX8 organization, TLC NAND TYPE, and 2199023255552 bit memory density. It operates in ASYNCHRONOUS mode at temperatures ranging from -40 to 105 °C, making it ideal for INDUSTRIAL applications requiring high-speed data storage.

R-XBGA-B

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

105 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL512TDP-1AT12AIYY by Micron Technology

MTFDHBL512TDP-1AT12AIYY

Micron Technology

MTFDHBL512TDP-1AT12AIYY by Micron Technology is a rectangular flash memory with 512GX8 organization, TLC NAND type, and industrial temperature grade. It operates asynchronously with a wide memory width of 8 bits. Ideal for applications requiring high-density storage in industrial environments.

R-XBGA-B

e1

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

95 Cel

-40 Cel

512GX8

UNSPECIFIED

RECTANGULAR

260

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

30

TLC NAND TYPE

MTFDHBL512TDQ-1AT12ATYY by Micron Technology

MTFDHBL512TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBL512TDQ-1AT12ATYY is a RECTANGULAR flash memory with 512GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it has an industrial temperature grade of -40 to 105 °C, making it suitable for high-performance applications.

R-XBGA-B

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

105 Cel

-40 Cel

512GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBM1T0TDP-1AT12AIYY by Micron Technology

MTFDHBM1T0TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBM1T0TDP-1AT12AIYY is a RECTANGULAR Flash Memory with 1TX8 organization, TLC NAND type, and CMOS technology. Operating in ASYNCHRONOUS mode at -40 to 95 °C, it offers 1099511627776 words capacity for industrial applications.

R-XBGA-B

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

95 Cel

-40 Cel

1TX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBM1T0TDQ-1AT12ATYY by Micron Technology

MTFDHBM1T0TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBM1T0TDQ-1AT12ATYY is a RECTANGULAR flash memory module with 8-bit memory width and 1TX8 organization. Operating in ASYNCHRONOUS mode, it offers high density of 8796093022208 bits for industrial applications at temperatures ranging from -40 to 105°C.

R-XBGA-B

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

105 Cel

-40 Cel

1TX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MT29F64G08AJABAWP-IT:BTR by Micron Technology

MT29F64G08AJABAWP-IT:BTR

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words: 8589934592 words; Peak Reflow Temperature (C): 260;

20 ns

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MTFC8GAMALBH-IT by Micron Technology

MTFC8GAMALBH-IT

Micron Technology

MTFC8GAMALBH-IT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a thin profile grid array package and is suitable for industrial applications requiring high memory density and fast data transfer speeds.

200 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GAPALNS-IT by Micron Technology

MTFC128GAPALNS-IT

Micron Technology

MTFC128GAPALNS-IT by Micron Technology is a 128GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support.

200 MHz

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC4GLDEA-0MWTTR by Micron Technology

MTFC4GLDEA-0MWTTR

Micron Technology

Micron Technology's MTFC4GLDEA-0MWTTR is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. With a compact rectangular package style and very thin profile, it is ideal for applications requiring high-speed synchronous operation in devices such as smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MT29F8G08ADBFAH4-AAT:FTR by Micron Technology

MT29F8G08ADBFAH4-AAT:FTR

Micron Technology

Micron Technology's MT29F8G08ADBFAH4-AAT:FTR is a SLC NAND flash memory with 1GX8 organization, 8-bit memory width, and 8589934592 bit density. It operates in ASYNCHRONOUS mode with a temperature range of -40 to 105 °C. Ideal for applications requiring high-speed data storage in compact devices.

X-PBGA-B

8589934592 bit

FLASH

8

1

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX8

UNSPECIFIED

BGA

UNSPECIFIED

GRID ARRAY

NOT SPECIFIED

YES

CMOS

BALL

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

MTFC16GAPALBH-AATTR by Micron Technology

MTFC16GAPALBH-AATTR

Micron Technology

MTFC16GAPALBH-AATTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for applications requiring high-speed data storage and retrieval. With a thin profile and fine pitch grid array package style, it offers compact design flexibility for various electronic devices.

200 MHz

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC4GLGDQ-AITATR by Micron Technology

MTFC4GLGDQ-AITATR

Micron Technology

Micron Technology's MTFC4GLGDQ-AITATR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at 52 MHz, it has a low profile grid array package suitable for synchronous applications. With a wide temperature range (-40 to 85 °C), it offers high-speed parallel data transfer in various electronic devices.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

1.4 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

MLC NAND TYPE

14 mm

MTFC4GLMDQ-AITATR by Micron Technology

MTFC4GLMDQ-AITATR

Micron Technology

FLASH CARD; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100; Memory Density: 34359738368 bit;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GACAALT-4MITTR by Micron Technology

MTFC8GACAALT-4MITTR

Micron Technology

Micron Technology's MTFC8GACAALT-4MITTR is a 3.3V, 8GX8 MLC NAND flash memory with 52MHz clock frequency. Operating in synchronous mode, it offers 68719476736-bit memory density for applications requiring high-speed data storage and retrieval in compact devices. With a thin profile and grid array package style, it is suitable for space-constrained designs needing reliable non-volatile memory solutions.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MTFC8GAMALBH-AITTR by Micron Technology

MTFC8GAMALBH-AITTR

Micron Technology

MTFC8GAMALBH-AITTR by Micron Technology is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for automotive applications due to AEC-Q104 screening level, thin profile package style, and wide temperature range from -40°C to 85°C.

4

200 MHz

NO

NO

5

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

YES

AEC-Q104

1.2 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

NAND TYPE

11.5 mm

MTFC8GAMALNA-AATTR by Micron Technology

MTFC8GAMALNA-AATTR

Micron Technology

FLASH CARD; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Programming Voltage (V): 2.7; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;

e1

FLASH CARD

260

2.7

TIN SILVER COPPER

30

MTFC8GLWDM-AITATR by Micron Technology

MTFC8GLWDM-AITATR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

52 MHz

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MT25QU01GBBB8E12-0AUTTR by Micron Technology

MT25QU01GBBB8E12-0AUTTR

Micron Technology

FLASH; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e1; Programming Voltage (V): 1.8; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260;

e1

FLASH

260

1.8

TIN SILVER COPPER

30

MT25QU02GCBB8E12-0AUTTR by Micron Technology

MT25QU02GCBB8E12-0AUTTR

Micron Technology

FLASH; Maximum Time At Peak Reflow Temperature (s): 30; Programming Voltage (V): 1.8; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260;

e1

FLASH

260

1.8

TIN SILVER COPPER

30

MT25QU256ABA8E12-0AUTTR by Micron Technology

MT25QU256ABA8E12-0AUTTR

Micron Technology

MT25QU256ABA8E12-0AUTTR by Micron Technology is a 32MX8 NOR flash memory with 166 MHz clock frequency, suitable for SPI serial applications. Operating at 1.8V, it offers 100000 Write/Erase cycles and has a compact size of 6mm x 8mm, making it ideal for automotive electronics and IoT devices.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

SPI

.00018 Amp

35 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT25QU256ABA8ESF-0AATTR by Micron Technology

MT25QU256ABA8ESF-0AATTR

Micron Technology

FLASH; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Minimum Operating Temperature: -40 Cel;

166 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

AEC-Q100

2.65 mm

SPI

.00012 Amp

35 mA

2 V

1.7 V

1.8

YES

CMOS

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

MT28EW256ABA1HPN-0SITTR by Micron Technology

MT28EW256ABA1HPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 9 mm; Nominal Supply Voltage / Vsup (V): 3;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

MT28EW256ABA1LPN-0SITTR by Micron Technology

MT28EW256ABA1LPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 7 mm; Maximum Standby Current: .000135 Amp;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

MT29F1G01AAADDH4-ITX:DTR by Micron Technology

MT29F1G01AAADDH4-ITX:DTR

Micron Technology

FLASH; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e1; Programming Voltage (V): 2.7;

e1

FLASH

260

2.7

Tin/Silver/Copper (Sn/Ag/Cu)

30

MT35XL01GBBA1G12-0AATTR by Micron Technology

MT35XL01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Serial Bus Type: SPI;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA1G12-0SITTR by Micron Technology

MT35XL01GBBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0AATTR by Micron Technology

MT35XL01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE; Maximum Seated Height: 1.2 mm;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0SITTR by Micron Technology

MT35XL01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles; Maximum Operating Temperature: 85 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA1G12-0SITTR by Micron Technology

MT35XL02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA2G12-0SITTR by Micron Technology

MT35XL02GCBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL; Write Protection: HARDWARE;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA1G12-0AATTR by Micron Technology

MT35XL256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA2G12-0AATTR by Micron Technology

MT35XL256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0AATTR by Micron Technology

MT35XL512ABA1G12-0AATTR

Micron Technology

MT35XL512ABA1G12-0AATTR by Micron Technology is a 64MX8 NOR type flash memory with a density of 536870912 bits. It operates at a voltage range of 2.7V to 3.6V and has a max clock frequency of 133 MHz. This flash memory is commonly used in automotive applications due to its AEC-Q100 screening level and high endurance of 100000 write/erase cycles.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0SITTR by Micron Technology

MT35XL512ABA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Minimum Operating Temperature: -40 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0AATTR by Micron Technology

MT35XL512ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words; Surface Mount: YES;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0SITTR by Micron Technology

MT35XL512ABA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Operating Mode: SYNCHRONOUS;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0AATTR by Micron Technology

MT35XU01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0AUTTR by Micron Technology

MT35XU01GBBA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm; Terminal Form: BALL;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0SITTR by Micron Technology

MT35XU01GBBA1G12-0SITTR

Micron Technology

MT35XU01GBBA1G12-0SITTR by Micron Technology is a 128MX8 NOR flash memory with 1.8V supply voltage, operating at up to 200MHz clock frequency. It features hardware write protection and offers 100000 write/erase cycles. Ideal for SPI serial applications requiring high endurance and fast data access in a compact GRID ARRAY package.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0AATTR by Micron Technology

MT35XU01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Technology: CMOS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE