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Micron Technology Flash Memory 937

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFC64GAJAEDQ-AAT by Micron Technology

MTFC64GAJAEDQ-AAT

Micron Technology

FLASH CARD; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Terminal Finish: GOLD OVER NICKEL; Programming Voltage (V): 2.7; Maximum Time At Peak Reflow Temperature (s): 30;

e4

FLASH CARD

260

2.7

GOLD OVER NICKEL

30

MTFC4GLGDQ-AITZ by Micron Technology

MTFC4GLGDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 4;

4

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

14 mm

MT29F16G08ABABAWP-AIT:B by Micron Technology

MT29F16G08ABABAWP-AIT:B

Micron Technology

Micron Technology's MT29F16G08ABABAWP-AIT:B is a 3.3V SLC NAND Flash Memory with 2GX8 organization, offering 4K page size and 100000 write/erase cycles endurance. Suitable for industrial applications, it operates in asynchronous mode with a temperature range of -40 to 85 °C.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

3

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

SLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12AIT:B by Micron Technology

MT29F16G08ABCBBH1-12AIT:B

Micron Technology

Micron Technology's MT29F16G08ABCBBH1-12AIT:B is a 2GX8 SLC NAND flash memory with 4K page size and 512K sector size. Operating at 3.3V, it offers industrial-grade endurance of 100k cycles. Suitable for applications requiring high-density, reliable storage solutions in industrial environments.

83MHZ CLOCK FREQUENCY IS AVAILABLE

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

ASYNCHRONOUS/SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

NOT SPECIFIED

3.3

YES

1 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

YES

SLC NAND TYPE

12 mm

MT29F64G08CBABBWP-12IT:B by Micron Technology

MT29F64G08CBABBWP-12IT:B

Micron Technology

FLASH; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Programming Voltage (V): 3.3; JESD-609 Code: e3; Type: MLC NAND TYPE;

e3

FLASH

260

3.3

TIN

30

MLC NAND TYPE

MT29F1G08ABAFAH4-ITE:F by Micron Technology

MT29F1G08ABAFAH4-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAH4-ITE:F is a 128MX8 SLC NAND flash memory with 1073741824 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABAFAWP-ITE:F by Micron Technology

MT29F1G08ABAFAWP-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAWP-ITE:F is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in industrial temperature range of -40 to 85°C. It features parallel interface, 48 terminals in small outline package, and offers high memory density of 1073741824 bits. Ideal for applications requiring fast and reliable non-volatile storage solutions.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MTFC8GLWDM-3LAATZ by Micron Technology

MTFC8GLWDM-3LAATZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

11.5 mm

MTFC8GLWDQ-3LAATZ by Micron Technology

MTFC8GLWDQ-3LAATZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GACAALT-4MIT by Micron Technology

MTFC4GACAALT-4MIT

Micron Technology

MTFC4GACAALT-4MIT by Micron Technology is a 3.3V MLC NAND flash memory with 4294967296 words, operating at 52 MHz clock frequency. It features a thin profile grid array package and is suitable for applications requiring high-speed data storage in devices like smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MTFC8GACAALT-4MIT by Micron Technology

MTFC8GACAALT-4MIT

Micron Technology

MTFC8GACAALT-4MIT by Micron Technology is a 100-terminal, 3.3V flash memory with 8GX8 organization and 52 MHz clock frequency. It operates in synchronous mode, suitable for applications requiring high-speed data storage and retrieval in a compact GRID ARRAY package.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

JS28F00AP30EFA by Micron Technology

JS28F00AP30EFA

Micron Technology

Micron Technology's JS28F00AP30EFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous mode, 1K sectors, and a page size of 16 words. Ideal for industrial applications requiring fast access times and high memory density.

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F512P30EFA by Micron Technology

JS28F512P30EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

512

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F512P30TFA by Micron Technology

JS28F512P30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

110 ns

TOP BOOT

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

4,511

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

PC28F512P30TFA by Micron Technology

PC28F512P30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

4,511

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC28F512P30TFB by Micron Technology

PC28F512P30TFB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

4,511

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MT29F1G08ABADAH4-IT:D by Micron Technology

MT29F1G08ABADAH4-IT:D

Micron Technology

MT29F1G08ABADAH4-IT:D by Micron Technology is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAH4:D by Micron Technology

MT29F1G08ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAHC-IT:D by Micron Technology

MT29F1G08ABBDAHC-IT:D

Micron Technology

MT29F1G08ABBDAHC-IT:D by Micron Technology is a 128MX8 SLC NAND flash memory with 1.8V supply, operating from -40 to 85 °C. It features a 2K word page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G08ABBDAHC:D by Micron Technology

MT29F1G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAH4-IT:D by Micron Technology

MT29F1G16ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAH4:D by Micron Technology

MT29F1G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAHC-IT:D by Micron Technology

MT29F1G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAHC:D by Micron Technology

MT29F1G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F2G01AAAEDH4-ITX:E by Micron Technology

MT29F2G01AAAEDH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B63;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G08ABBEAH4-AITX:E by Micron Technology

MT29F1G08ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications due to its very thin profile and fine pitch grid array package style.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABAEAH4-AITX:E by Micron Technology

MT29F1G08ABAEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABAEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel programming with 0.8mm terminal pitch. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G16ABBEAH4-AITX:E by Micron Technology

MT29F1G16ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G16ABBEAH4-AITX:E is a 64MX16 SLC NAND flash memory with 1073741824-bit density. Operating at 1.8V, it features a very thin profile package style and industrial temperature grade suitability. Ideal for applications requiring high-speed parallel data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G01AAAEDH4-IT:E by Micron Technology

MT29F2G01AAAEDH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MTFC4GMDEA-1MWT by Micron Technology

MTFC4GMDEA-1MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC16GJDEC-2MWT by Micron Technology

MTFC16GJDEC-2MWT

Micron Technology

Micron Technology's MTFC16GJDEC-2MWT is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a voltage range of 2.7V to 3.6V and operates in parallel mode. With a compact size of 14mm x 18mm, it is suitable for applications requiring high-speed data storage and retrieval in devices like smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B169

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GJDED-3MWT by Micron Technology

MTFC32GJDED-3MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

52 MHz

NO

NO

R-PBGA-B169

18 mm

274877906944 bit

FLASH CARD

8

1

169

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC4GLDEA-0MWT by Micron Technology

MTFC4GLDEA-0MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC64GJDDN-3MWT by Micron Technology

MTFC64GJDDN-3MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

52 MHz

NO

NO

R-PBGA-B169

18 mm

549755813888 bit

FLASH CARD

8

1

169

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3.3

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC8GLDEA-1MWT by Micron Technology

MTFC8GLDEA-1MWT

Micron Technology

MTFC8GLDEA-1MWT by Micron Technology is a 3.3V MLC NAND Flash Memory with 8GX8 organization, operating at up to 52 MHz clock frequency. It features a very thin profile, fine pitch grid array package and is suitable for applications requiring high memory density and parallel operation in devices with limited space constraints.

52 MHz

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MT29F1G08ABBEAH4-IT:E by Micron Technology

MT29F1G08ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F2G08ABBEAHC:E by Micron Technology

MT29F2G08ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT28EW01GABA1HJS-0AAT by Micron Technology

MT28EW01GABA1HJS-0AAT

Micron Technology

Micron Technology's MT28EW01GABA1HJS-0AAT is a 64MX16 NOR flash memory with 1073741824 bit density. Operating at -40 to 105 °C, it has a max access time of 105 ns and uses a programming voltage of 3V. Ideal for industrial applications, this flash memory features a small outline package with dual terminals and gull wing form factor.

105 ns

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28EW01GABA1HPC-0AAT by Micron Technology

MT28EW01GABA1HPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;

105 ns

R-PBGA-B64

13 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

11 mm

MT28EW01GABA1LJS-0AAT by Micron Technology

MT28EW01GABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Width: 14 mm;

105 ns

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28EW01GABA1LPC-0AAT by Micron Technology

MT28EW01GABA1LPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

105 ns

R-PBGA-B64

13 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

MT28EW512ABA1HJS-0AAT by Micron Technology

MT28EW512ABA1HJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

105 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28EW512ABA1HPC-0AAT by Micron Technology

MT28EW512ABA1HPC-0AAT

Micron Technology

MT28EW512ABA1HPC-0AAT by Micron Technology is a 32MX16 FLASH Memory IC with 536870912 bit memory density. Operating at 105 ns access time, it has a supply voltage range of 2.7V to 3.6V and supports asynchronous mode. Ideal for industrial applications requiring high-speed data storage in compact form factors.

105 ns

8

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28EW512ABA1LJS-0AAT by Micron Technology

MT28EW512ABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

105 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28EW512ABA1LPC-0AAT by Micron Technology

MT28EW512ABA1LPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 13 mm;

105 ns

8

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28FW512ABA1HJS-0AAT by Micron Technology

MT28FW512ABA1HJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;

105 ns

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28FW512ABA1HPC-0AAT by Micron Technology

MT28FW512ABA1HPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;

105 ns

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28FW512ABA1LJS-0AAT by Micron Technology

MT28FW512ABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Technology: CMOS;

105 ns

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm