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Micron Technology Flash Memory 937

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFC64GASAQHD-AIT by Micron Technology

MTFC64GASAQHD-AIT

Micron Technology

Micron Technology's MTFC64GASAQHD-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it suits applications requiring high-speed data storage. With AEC-Q104 screening and -40 to 85 °C temp range, it's ideal for automotive electronics.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GASAQHD-AAT by Micron Technology

MTFC32GASAQHD-AAT

Micron Technology

Micron's MTFC32GASAQHD-AAT is a 32GX8 NAND flash memory with 34359738368 words. Operating in synchronous mode at up to 200 MHz, it offers a memory density of 274877906944 bits. Ideal for applications requiring high-speed data storage and retrieval in automotive electronics due to AEC-Q104 screening level.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GAZAQHD-WT by Micron Technology

MTFC64GAZAQHD-WT

Micron Technology

MTFC64GAZAQHD-WT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating in synchronous mode, it has a package style of GRID ARRAY, suitable for applications requiring high-speed data storage. With a very thin profile and fine pitch, it offers parallel operation at temperatures ranging from -25 to 85 °C.

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MT29F1G08ABBEAH4-ITX:E by Micron Technology

MT29F1G08ABBEAH4-ITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-ITX:E is a 128Mx8 SLC NAND flash memory with 1.8V supply voltage, operating from -40 to 85°C. Featuring 100K write/erase cycles, it has a page size of 2K words and sector size of 128K words. Ideal for applications requiring high endurance and reliable data storage in compact devices.

NO

YES

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

YES

SLC NAND TYPE

9 mm

MT25QL128ABB1EW7-CSIT by Micron Technology

MT25QL128ABB1EW7-CSIT

Micron Technology

Micron Technology's MT25QL128ABB1EW7-CSIT is a 16MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is suitable for applications requiring high-speed data storage in compact devices.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3

.8 mm

SPI

.00003 Amp

35 mA

3.6 V

2.7 V

3

YES

CMOS

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MT29F8G08ADADAH4-IT:DTR by Micron Technology

MT29F8G08ADADAH4-IT:DTR

Micron Technology

Micron Technology's MT29F8G08ADADAH4-IT:DTR is a 3.3V SLC NAND flash memory with 1GX8 organization, offering 2K page size and 128K sector size. It features a very thin profile grid array package suitable for applications requiring high endurance of up to 100,000 write/erase cycles. Operating in asynchronous mode, it has a max temperature of 85°C and min of -40°C, making it ideal for various industrial and automotive uses.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

YES

1 mm

128K

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F8G08AAAWP:ATR by Micron Technology

MT29F8G08AAAWP:ATR

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm; Page Size (words): 2K;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

8K

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

YES

1.2 mm

128K

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F256G08CJABAWP:B by Micron Technology

MT29F256G08CJABAWP:B

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48; No. of Words: 34359738368 words;

NO

NO

3000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

TSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3.3

YES

1.2 mm

.00005 Amp

3.6 V

2.7 V

3.3

YES

CMOS

GULL WING

.5 mm

QUAD

NO

MLC NAND TYPE

12 mm

HARDWARE

MTFC4GLGDQ-AIT by Micron Technology

MTFC4GLGDQ-AIT

Micron Technology

FLASH; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Technology: CMOS; Package Equivalence Code: BGA100,10X17,40;

52 MHz

NO

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GJGDQ-AIT by Micron Technology

MTFC32GJGDQ-AIT

Micron Technology

FLASH; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 274877906944 bit; Command User Interface: NO;

52 MHz

NO

NO

R-PBGA-B100

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GAZAQDW-AAT by Micron Technology

MTFC32GAZAQDW-AAT

Micron Technology

MTFC32GAZAQDW-AAT by Micron Technology is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. AEC-Q100 screening makes it suitable for automotive applications requiring high reliability in harsh environments. Its low profile grid array package and synchronous operation offer compact design and efficient data transfer for automotive electronics.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAZAQDW-AATTR by Micron Technology

MTFC32GAZAQDW-AATTR

Micron Technology

Micron Technology's MTFC32GAZAQDW-AATTR is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications meeting AEC-Q100 standards, it offers high memory density of 274877906944 bits in a compact GRID ARRAY package style.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MT29F4G01ABAFD12-AUT:F by Micron Technology

MT29F4G01ABAFD12-AUT:F

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL; Minimum Data Retention Time: 10;

CONFIGURABLE AS 4G X 1

2

133 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

4294967296 bit

FLASH

8

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3.3

AEC-Q100

1.2 mm

SPI

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

MT29F4G01ABBFD12-AUT:F by Micron Technology

MT29F4G01ABBFD12-AUT:F

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles; Operating Mode: SYNCHRONOUS;

CONFIGURABLE AS 4G X 1

2

83 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

4294967296 bit

FLASH

8

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

AEC-Q100

1.2 mm

SPI

.0001 Amp

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

MTFDKCC960TFR-1BC1ZABYY by Micron Technology

MTFDKCC960TFR-1BC1ZABYY

Micron Technology

Micron Technology's MTFDKCC960TFR-1BC1ZABYY is a RECTANGULAR MICROELECTRONIC ASSEMBLY Flash Memory with 960GX8 organization, TLC NAND Type, and 8246337208320 bit memory density. It operates b/w 0 to 70 °C and contains 1030792151040 words. Ideal for high-density storage applications requiring reliable performance in various temperature conditions.

R-XXMA-X

8246337208320 bit

FLASH MODULE

8

1

1030792151040 words

960G

70 Cel

0 Cel

960GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

UNSPECIFIED

UNSPECIFIED

TLC NAND TYPE

MTSD128AHC6MS-1WTCS by Micron Technology

MTSD128AHC6MS-1WTCS

Micron Technology

FLASH CARD; No. of Terminals: 8; Package Code: DIE; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3; Minimum Supply Voltage (Vsup): 2.7 V;

208 MHz

R-XUUC-N8

15 mm

1099511627776 bit

FLASH CARD

8

1

8

137438953472 words

128G

SYNCHRONOUS

85 Cel

-25 Cel

128GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

3.3

1.1 mm

SPI

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

TLC NAND TYPE

11 mm

MTSD064AHC6MS-1WTCS by Micron Technology

MTSD064AHC6MS-1WTCS

Micron Technology

FLASH CARD; No. of Terminals: 8; Package Code: DIE; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Position: UPPER;

208 MHz

R-XUUC-N8

15 mm

549755813888 bit

FLASH CARD

8

1

8

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

3.3

1.1 mm

SPI

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

TLC NAND TYPE

11 mm

MTSD032AHC6MS-1WTCS by Micron Technology

MTSD032AHC6MS-1WTCS

Micron Technology

MTSD032AHC6MS-1WTCS by Micron Technology is a 32GX8 TLC NAND flash memory chip with 208 MHz clock frequency. Operating at 3.3V, it offers 274877906944 bits memory density and uses SPI serial bus for applications requiring high-speed data storage in compact devices.

208 MHz

R-XUUC-N8

15 mm

274877906944 bit

FLASH CARD

8

1

8

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

3.3

1.1 mm

SPI

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

TLC NAND TYPE

11 mm

MT29F2G01ABAGDSF-IT:G by Micron Technology

MT29F2G01ABAGDSF-IT:G

Micron Technology

FLASH; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Length: 10.3 mm; Organization: 256MX8;

133 MHz

10

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

2147483648 bit

FLASH

8

1

16

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

2.65 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

GULL WING

1.27 mm

DUAL

SLC NAND TYPE

7.5 mm

HARDWARE/SOFTWARE

MT29F2G01ABAGD12-IT:G by Micron Technology

MT29F2G01ABAGD12-IT:G

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Maximum Clock Frequency (fCLK): 133 MHz;

133 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3.3

1.2 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

MTFC4GMXEA-WT by Micron Technology

MTFC4GMXEA-WT

Micron Technology

MTFC4GMXEA-WT by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating at 52 MHz, it has a low profile of 0.8 mm and supports hardware write protection. Ideal for embedded MMC applications, this synchronous memory features a very thin grid array package with 153 terminals.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

Embedded MMC

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC32GLXDM-WT by Micron Technology

MTFC32GLXDM-WT

Micron Technology

MTFC32GLXDM-WT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at 52 MHz, it has a thin profile and fine pitch package style suitable for embedded MMC applications. With a voltage range of 1.65V to 1.95V, this CMOS technology chip offers hardware write protection and open-drain output characteristics.

52 MHz

R-PBGA-B153

13 mm

274877906944 bit

Embedded MMC

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

1.2 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC8GLXEA-WT by Micron Technology

MTFC8GLXEA-WT

Micron Technology

MTFC8GLXEA-WT by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 1.8V programming voltage. It is used in embedded MMC applications due to its 68719476736 bit memory density and synchronous operation mode.

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

Embedded MMC

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC2GMXEA-WT by Micron Technology

MTFC2GMXEA-WT

Micron Technology

MTFC2GMXEA-WT by Micron Technology is a NAND flash memory with 2GX8 organization, operating at 52 MHz clock frequency. It features a very thin profile package style and offers 17179869184 bit memory density. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

R-PBGA-B153

13 mm

17179869184 bit

Embedded MMC

8

1

153

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

70 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC16GLXDV-WT by Micron Technology

MTFC16GLXDV-WT

Micron Technology

Embedded MMC; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 137438953472 bit; Maximum Supply Current: 80 mA;

52 MHz

R-PBGA-B169

16 mm

137438953472 bit

Embedded MMC

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

1 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

12 mm

HARDWARE