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Micron Technology Flash Memory 937

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT35XL01GBBA2G12-0AAT by Micron Technology

MT35XL01GBBA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

133 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA1G12-0AAT by Micron Technology

MT35XL256ABA1G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA2G12-0AAT by Micron Technology

MT35XL256ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA1G12-0AAT by Micron Technology

MT35XL512ABA1G12-0AAT

Micron Technology

MT35XL512ABA1G12-0AAT by Micron Technology is a 512M Flash Memory with 536870912 bit density. It operates at 133 MHz clock frequency, has a thin profile grid array package style, and supports synchronous mode. Ideal for industrial applications requiring high memory capacity and reliable performance in harsh environments.

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA2G12-0AAT by Micron Technology

MT35XL512ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU02GCBA2G12-0AUT by Micron Technology

MT35XU02GCBA2G12-0AUT

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0AUT is a 256MX8 flash memory IC with 1.8V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications, it features AEC-Q100 screening level and operates in a temperature range of -40°C to 125°C.

200 MHz

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AAT by Micron Technology

MT35XU256ABA1G12-0AAT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AAT is a 256MX1 flash memory with 268M words. Operating at 166MHz, it has a voltage range of 1.7V to 2V and withstands industrial temperatures from -40°C to 105°C. Ideal for applications requiring high-speed synchronous operation in compact devices.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AUT by Micron Technology

MT35XU256ABA1G12-0AUT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AUT is a 256MX1 flash memory with 268Mbit density. Operating at 166MHz, it has a supply voltage range of 1.7V to 2V and supports automotive applications. With AEC-Q100 screening, this synchronous memory in grid array package offers high performance in harsh environments.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA2G12-0AUT by Micron Technology

MT35XU256ABA2G12-0AUT

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

200 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU512ABA2G12-0AUT by Micron Technology

MT35XU512ABA2G12-0AUT

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

200 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT29F4G08ABAEAH4:E by Micron Technology

MT29F4G08ABAEAH4:E

Micron Technology

FLASH; Type: SLC NAND TYPE; JESD-609 Code: e1; Programming Voltage (V): 3.3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN SILVER COPPER;

e1

FLASH

260

3.3

TIN SILVER COPPER

30

SLC NAND TYPE

MTFC2GMDEA-0MWTA by Micron Technology

MTFC2GMDEA-0MWTA

Micron Technology

MTFC2GMDEA-0MWTA by Micron Technology is a 2GX8 flash memory with 17179869184 bit density. Operating at 52 MHz, it has a very thin profile and fine pitch package style suitable for synchronous applications. With a voltage range of 2.7V to 3.6V, it is ideal for high-speed data storage in electronic devices.

ALSO HAVING MMC CONTROLLER

52 MHz

R-PBGA-B153

e2

13 mm

17179869184 bit

FLASH

8

1

153

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

30

11.5 mm

MT29F2G16ABBEAH4-IT:E by Micron Technology

MT29F2G16ABBEAH4-IT:E

Micron Technology

MT29F2G16ABBEAH4-IT:E by Micron Technology is a 128MX16 SLC NAND flash memory with 1.8V supply, operating from -40 to 85°C. It features a 1K word page size, 64K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G01AAADDH4-ITX:D by Micron Technology

MT29F1G01AAADDH4-ITX:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-ITX:D is a 1GX1 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it offers synchronous mode and supports up to 50MHz clock frequency. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MTFC4GLGDQ-AITA by Micron Technology

MTFC4GLGDQ-AITA

Micron Technology

MTFC4GLGDQ-AITA by Micron Technology is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating in synchronous mode, it has a low profile grid array package style and operates at industrial temperature grade. Ideal for applications requiring high memory capacity and fast data access speeds.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F16G08ABABAWP-IT:BTR by Micron Technology

MT29F16G08ABABAWP-IT:BTR

Micron Technology

MT29F16G08ABABAWP-IT:BTR by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, operating from -40 to 85°C. It features a parallel interface, 48 terminals in a small outline package, and offers 17179869184-bit memory density. Ideal for industrial applications requiring high-speed data storage and retrieval.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

PF48F4400P0VBQ0A by Micron Technology

PF48F4400P0VBQ0A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 88; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

88 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B88

11 mm

536870912 bit

FLASH

16

1

8, 510

88

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TFBGA

BGA88,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

4

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000005 Amp

Flash Memories

51 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

8 mm

PC48F4400P0VB00A by Micron Technology

PC48F4400P0VB00A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 13 mm;

88 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

8, 510

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000005 Amp

Flash Memories

51 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

10 mm

MT29F8G08ABACAWP-AIT:CTR by Micron Technology

MT29F8G08ABACAWP-AIT:CTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

YES

NO

60000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

4K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

YES

1.2 mm

256K

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

RC28F128J3F75F by Micron Technology

RC28F128J3F75F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

75 ns

8

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

10 mm

MT29F32G08ABAAAWP-IT:A by Micron Technology

MT29F32G08ABAAAWP-IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

4K

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

1M

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP-ITZ:C by Micron Technology

MT29F32G08AFACAWP-ITZ:C

Micron Technology

MT29F32G08AFACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 4GX8 organization, 8K sectors, and 4K page size. It operates in industrial temperature range (-40 to 85 °C) and has a max access time of 20 ns. Ideal for applications requiring high-speed data storage in compact devices.

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F1G01ABAFDSF-AAT:F by Micron Technology

MT29F1G01ABAFDSF-AAT:F

Micron Technology

Micron Technology's MT29F1G01ABAFDSF-AAT:F is a 3.3V SLC NAND Flash Memory with 1Gx1 organization, operating from -40 to 105°C. It offers 1073741824-bit memory density for industrial applications, featuring serial interface and small outline package ideal for space-constrained designs.

R-PDSO-G16

1073741824 bit

FLASH

1

1

16

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

3.3

YES

CMOS

INDUSTRIAL

GULL WING

DUAL

NOT SPECIFIED

SLC NAND TYPE

MTFC4GLGDQ-AITZTR by Micron Technology

MTFC4GLGDQ-AITZTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 14 mm;

4

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

14 mm

MTFC64GAPALBH-IT by Micron Technology

MTFC64GAPALBH-IT

Micron Technology

MTFC64GAPALBH-IT by Micron Technology is a 64GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support from -40°C to 85°C.

200 MHz

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC4GLMDQ-AITZTR by Micron Technology

MTFC4GLMDQ-AITZTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 4294967296 words;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MTFC64GASAONS-AAT by Micron Technology

MTFC64GASAONS-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC64GASAONS-AITESTR by Micron Technology

MTFC64GASAONS-AITESTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC16GAKAEDQ-AATTR by Micron Technology

MTFC16GAKAEDQ-AATTR

Micron Technology

FLASH CARD; Programming Voltage (V): 2.7; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;

e4

FLASH CARD

260

2.7

Gold (Au) - with Nickel (Ni) barrier

30

MT25QL256ABA1EW9-0AAT by Micron Technology

MT25QL256ABA1EW9-0AAT

Micron Technology

Micron Technology's MT25QL256ABA1EW9-0AAT is a 256Mbit flash memory with synchronous operation, 133MHz clock frequency, and 3V nominal voltage. Ideal for industrial applications, it offers high memory density of 268435456 bits in a small outline package with very thin profile.

133 MHz

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

AEC-Q100

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

N25Q128A13EF8A0FTR by Micron Technology

N25Q128A13EF8A0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Memory Density: 134217728 bit;

108 MHz

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

N25Q032A13ESCA0FTR by Micron Technology

N25Q032A13ESCA0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 33554432 words;

108 MHz

R-PDSO-G8

4.9 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

1.75 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

MT29F2G16ABAEAWP:ETR by Micron Technology

MT29F2G16ABAEAWP:ETR

Micron Technology

Micron Technology's MT29F2G16ABAEAWP:ETR is a 3.3V SLC NAND flash memory with 128Mx16 organization and 2147483648-bit memory density. Operating in asynchronous mode, it has a temperature range of 0-70°C and is suitable for commercial applications requiring high-speed parallel memory access.

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

12 mm

N25Q064A13E1240E by Micron Technology

N25Q064A13E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

108 MHz

NO

20

COMMON

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

TOTEM POLE

PLASTIC/EPOXY

TBGA

BGA24, 5X5, 40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

SPI

.0001 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

HARDWARE/SOFTWARE

MTFC4GACAJCN-4MITTR by Micron Technology

MTFC4GACAJCN-4MITTR

Micron Technology

Micron Technology's MTFC4GACAJCN-4MITTR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at up to 52 MHz, it features a very thin profile and fine pitch grid array package suitable for industrial applications. With a wide temperature range (-40 to 85 °C), this synchronous memory offers high performance in compact dimensions.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTSD256AHC6MS-1WT by Micron Technology

MTSD256AHC6MS-1WT

Micron Technology

FLASH CARD; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD; Package Body Material: UNSPECIFIED; Package Style (Meter): UNCASED CHIP;

R-XUUC-N

2199023255552 bit

FLASH CARD

8

1

274877906944 words

256G

SYNCHRONOUS

85 Cel

-25 Cel

256GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MTSD064AHC6MS-1WT by Micron Technology

MTSD064AHC6MS-1WT

Micron Technology

Micron Technology's MTSD064AHC6MS-1WT is a 64GX8 NOR type flash memory chip with 549755813888-bit density. Operating synchronously at -25 to 85 °C, it offers 68719476736 words capacity for various applications requiring high-speed serial memory solutions.

R-XUUC-N

549755813888 bit

FLASH CARD

8

1

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MTSD032AHC6MS-1WT by Micron Technology

MTSD032AHC6MS-1WT

Micron Technology

MTSD032AHC6MS-1WT by Micron Technology is a 32GX8 NOR flash memory chip with 274877906944-bit density. Operating in synchronous mode, it has a memory width of 8 and operates serially. Ideal for applications requiring high-speed data storage and retrieval at temperatures ranging from -25°C to 85°C.

R-XUUC-N

274877906944 bit

FLASH CARD

8

1

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MTSD128AHC6MS-1WT by Micron Technology

MTSD128AHC6MS-1WT

Micron Technology

FLASH CARD; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD; Terminal Position: UPPER; Technology: CMOS;

R-XUUC-N

1099511627776 bit

FLASH CARD

8

1

137438953472 words

128G

SYNCHRONOUS

85 Cel

-25 Cel

128GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MTFC128GAPALBH-AAT by Micron Technology

MTFC128GAPALBH-AAT

Micron Technology

MTFC128GAPALBH-AAT by Micron Technology is a 128GX8 NAND flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a terminal pitch of 0.5 mm and supports parallel communication. This thin profile package is ideal for applications requiring high-speed data storage and retrieval at temperatures ranging from -40 to 105 °C.

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.1 mm

3.6 V

2.7 V

YES

CMOS

GULL WING

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC16GAPALGT-AIT by Micron Technology

MTFC16GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 16GX8;

200 MHz

5

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAKAJCN-4MITTR by Micron Technology

MTFC8GAKAJCN-4MITTR

Micron Technology

Micron Technology's MTFC8GAKAJCN-4MITTR is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 52 MHz clock frequency, suitable for industrial applications. The package style is grid array with very thin profile and fine pitch, making it ideal for compact electronic devices.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC16GAPALHT-AIT by Micron Technology

MTFC16GAPALHT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

200 MHz

5

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

14 mm

MT29F8G08ADBDAH4-AAT:D by Micron Technology

MT29F8G08ADBDAH4-AAT:D

Micron Technology

MT29F8G08ADBDAH4-AAT:D by Micron Technology is an 1GX8 SLC NAND flash memory with 105°C max and -40°C min operating temp. It offers 1073741824 words, 8589934592 bit density, and INDUSTRIAL grade. Ideal for applications requiring high reliability in harsh environments.

8589934592 bit

FLASH

8

1073741824 words

1G

105 Cel

-40 Cel

1GX8

INDUSTRIAL

SLC NAND TYPE

MT29F2G08ABAGAWP-IT:GTR by Micron Technology

MT29F2G08ABAGAWP-IT:GTR

Micron Technology

Micron Technology's MT29F2G08ABAGAWP-IT:GTR is an industrial-grade SLC NAND flash memory with 256MX8 organization, operating from -40 to 85 °C. It offers a memory density of 2147483648 bits and is suitable for applications requiring high reliability in harsh environments.

2147483648 bit

FLASH

8

1

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

CMOS

INDUSTRIAL

SLC NAND TYPE

MTFDDAV480TDS-1AW1ZABYY by Micron Technology

MTFDDAV480TDS-1AW1ZABYY

Micron Technology

Micron Technology's MTFDDAV480TDS-1AW1ZABYY is a 480GX8 TLC NAND flash memory with 3.3V programming voltage. Operating in asynchronous mode, it has a memory density of 4123168604160 bit and operates b/w 0 to 70 °C. Ideal for microelectronic assemblies, this rectangular package measures 80mm x 22mm x 3.28mm and features a serial interface with no lead terminals.

R-XSMA-N75

80 mm

4123168604160 bit

FLASH MODULE

8

1

75

515396075520 words

480G

ASYNCHRONOUS

70 Cel

0 Cel

480GX8

UNSPECIFIED

SMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

3.3

3.28 mm

3.46 V

3.14 V

3.3

NO

CMOS

NO LEAD

SINGLE

TLC NAND TYPE

22 mm

MTFC16GAPALBH-ITTR by Micron Technology

MTFC16GAPALBH-ITTR

Micron Technology

MTFC16GAPALBH-ITTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, it offers high-speed synchronous operation in a compact form factor.

200 MHz

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC16GAPALBH-IT by Micron Technology

MTFC16GAPALBH-IT

Micron Technology

MTFC16GAPALBH-IT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, this flash card offers high memory density and synchronous operation.

200 MHz

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm