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Micron Technology Flash Memory 937

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
RC28F256P33BFE by Micron Technology

RC28F256P33BFE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

2.7

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MTFDDAV120MAV-1AE12ABYY by Micron Technology

MTFDDAV120MAV-1AE12ABYY

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: SMA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 5.5 V;

R-XSMA-N22

100.45 mm

1030792151040 bit

FLASH MODULE

8

1

22

128849018880 words

120G

ASYNCHRONOUS

70 Cel

0 Cel

120GX8

3-STATE

UNSPECIFIED

SMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

N25Q064A13ESED0E by Micron Technology

N25Q064A13ESED0E

Micron Technology

N25Q064A13ESED0E by Micron Technology is a NOR flash memory with 64MX1 organization, operating at 108 MHz clock frequency. It offers 100000 Write/Erase cycles endurance and operates on a 3V supply voltage. Ideal for industrial applications requiring high-speed data storage in compact form factors.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q064A13ESED0G by Micron Technology

N25Q064A13ESED0G

Micron Technology

The Micron Technology N25Q064A13ESED0G is a NOR type Flash Memory with 64Mx1 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85°C and has a small outline package style. Ideal for industrial applications requiring high-speed data storage with up to 100,000 write/erase cycles.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q064A13EW7D0E by Micron Technology

N25Q064A13EW7D0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

.8 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

JS28F640J3F75A by Micron Technology

JS28F640J3F75A

Micron Technology

Micron Technology's JS28F640J3F75A is a 64Mb NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a parallel interface, 4194304 words capacity, and peak reflow temp of 260°C. Ideal for industrial applications requiring fast access times and reliable data storage.

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75B by Micron Technology

JS28F640J3F75B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75E by Micron Technology

JS28F640J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words: 4194304 words;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

PC28F128J3F75B by Micron Technology

PC28F128J3F75B

Micron Technology

Micron Technology's PC28F128J3F75B is a 128Mb NOR Flash Memory with 8MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and 75ns access time. Ideal for applications requiring high-speed data storage in harsh environments.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F320J3F75A by Micron Technology

PC28F320J3F75A

Micron Technology

Micron Technology's PC28F320J3F75A is a 32Mb NOR Flash Memory with 2MX16 organization, operating at -40 to 85°C. It features a parallel interface, 1mm terminal pitch, and 80mA max supply current. Ideal for industrial applications requiring fast access times and reliable non-volatile memory storage.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F640J3F75A by Micron Technology

PC28F640J3F75A

Micron Technology

Micron Technology's PC28F640J3F75A is a 64-terminal NOR flash memory with 4MX16 organization, operating at 3V. With a sector size of 128K words and max access time of 75ns, it is ideal for industrial applications requiring fast and reliable non-volatile memory storage.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

RC28F320J3F75A by Micron Technology

RC28F320J3F75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

75 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

235

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn63Pb37)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

RC28F512M29EWHA by Micron Technology

RC28F512M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

100 ns

8

YES

YES

YES

R-PBGA-B64

e0

13 mm

536870912 bit

FLASH

16

1

512

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.000225 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

N25Q00AA11GSF40G by Micron Technology

N25Q00AA11GSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

108 MHz

R-PDSO-G16

10.3 mm

1073741824 bit

FLASH

1

1

16

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.5 mm

MT29F1G01AAADDH4-IT:D by Micron Technology

MT29F1G01AAADDH4-IT:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:D is a 1GX1 SLC NAND Flash Memory with 1073741824 bit memory density. It operates at 3.3V, has a clock frequency of 50 MHz, and supports serial communication. This industrial-grade memory chip is ideal for applications requiring high-speed data storage in compact devices.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F1G08ABADAWP:D by Micron Technology

MT29F1G08ABADAWP:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP:D is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in asynchronous mode. It features a page size of 2K words and sector size of 128K words, suitable for commercial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

1K

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

JS28F00AM29EWHA by Micron Technology

JS28F00AM29EWHA

Micron Technology

Micron Technology's JS28F00AM29EWHA is a NOR type Flash Memory with 64MX16 organization, operating at 3V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast access times and high memory density.

110 ns

8

YES

YES

YES

R-PDSO-G56

e4

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16/32

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

MT28F004B3VG-8B by Micron Technology

MT28F004B3VG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Boot Block: BOTTOM;

80 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F400B3SG-8BET by Micron Technology

MT28F400B3SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Sector Size (Words): 16K,8K,96K,128K;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3SG-8B by Micron Technology

MT28F400B3SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Type: NOR TYPE;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3SG-8TET by Micron Technology

MT28F400B3SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3SG-8T by Micron Technology

MT28F400B3SG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3WG-8BET by Micron Technology

MT28F400B3WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8B by Micron Technology

MT28F400B3WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8TET by Micron Technology

MT28F400B3WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP48,.8,20;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8T by Micron Technology

MT28F400B3WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

PC28F256P33BFE by Micron Technology

PC28F256P33BFE

Micron Technology

Micron Technology's PC28F256P33BFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes. Ideal for industrial applications, this thin-profile grid array package has a max operating temperature of 85°C.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33BFR by Micron Technology

PC28F256P33BFR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33TFE by Micron Technology

PC28F256P33TFE

Micron Technology

Micron Technology's PC28F256P33TFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes for industrial applications. With a max operating temperature of 85°C, this thin-profile grid array package has a parallel interface and supports common flash commands.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC48F4400P0TB0EE by Micron Technology

PC48F4400P0TB0EE

Micron Technology

Micron Technology's PC48F4400P0TB0EE is a 32MX16 Flash Memory with 536Mbit density. Operating at 3V, it offers synchronous mode and 95ns access time. Ideal for industrial applications, this memory has a temperature range of -40 to 85°C and features parallel interface with 1mm terminal pitch.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

PC48F4400P0TB0EH by Micron Technology

PC48F4400P0TB0EH

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

RC28F256P33TFE by Micron Technology

RC28F256P33TFE

Micron Technology

Micron Technology's RC28F256P33TFE is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers synchronous mode and industrial temperature grade. With 95ns access time, it suits applications requiring fast parallel data storage and retrieval.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC48F4400P0TB0EJ by Micron Technology

RC48F4400P0TB0EJ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT25QL02GCBA8E12-0SIT by Micron Technology

MT25QL02GCBA8E12-0SIT

Micron Technology

MT25QL02GCBA8E12-0SIT by Micron: NOR Flash Memory, 512Mx4 organization, 133MHz clock frequency. Ideal for industrial applications requiring high endurance and serial SPI interface.

MEMORY WIDTH CAN ALSO ORGANISED AS X1

2

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

4

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX4

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

60 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT28F128J3FS-12MET by Micron Technology

MT28F128J3FS-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

120 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3RG-12MET by Micron Technology

MT28F128J3RG-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

120 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F320J3FS-11MET by Micron Technology

MT28F320J3FS-11MET

Micron Technology

Micron Technology's MT28F320J3FS-11MET is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features a fast access time of 110ns and industrial temperature grade suitability. Ideal for applications requiring high-speed data storage in industrial environments.

110 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F640J3FS-115MET by Micron Technology

MT28F640J3FS-115MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

115 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

67108864 bit

FLASH

16

1

64

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3BS-12ET by Micron Technology

MT28F128J3BS-12ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

120 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3BS-12MET by Micron Technology

MT28F128J3BS-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

120 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3RP-12ET by Micron Technology

MT28F128J3RP-12ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: NOR TYPE;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F128J3RP-12MET by Micron Technology

MT28F128J3RP-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 16;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F320J3BS-11ET by Micron Technology

MT28F320J3BS-11ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

110 ns

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT28F320J3BS-11MET by Micron Technology

MT28F320J3BS-11MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

110 ns

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT28F640J3BS-115ET by Micron Technology

MT28F640J3BS-115ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

115 ns

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT28F640J3BS-115MET by Micron Technology

MT28F640J3BS-115MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

115 ns

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT28F800B3WP-9B by Micron Technology

MT28F800B3WP-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Additional Features: BOTTOM BOOT BLOCK;

90 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WP-9T by Micron Technology

MT28F800B3WP-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

90 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm