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Micron Technology Flash Memory 937

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
JS28F128P33BF70A by Micron Technology

JS28F128P33BF70A

Micron Technology

Micron Technology's JS28F128P33BF70A is a NOR type Flash Memory with 8MX16 organization, operating at 3V. It features a small outline package, synchronous mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

20 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

260

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

MT29F16G08AJADAWP-IT:D by Micron Technology

MT29F16G08AJADAWP-IT:D

Micron Technology

MT29F16G08AJADAWP-IT:D by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85°C. It features a page size of 2K words, sector size of 128K words, and parallel interface. Ideal for industrial applications requiring fast access time and low standby current.

25 ns

YES

NO

R-PDSO-G48

18.4 mm

17179869184 bit

FLASH

8

1

16K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F2G08ABBEAH4:E by Micron Technology

MT29F2G08ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAHC:E by Micron Technology

MT29F2G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 2147483648 bit;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G08ABBDAHC:D by Micron Technology

MT29F4G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABADAH4-IT:D by Micron Technology

MT29F4G16ABADAH4-IT:D

Micron Technology

MT29F4G16ABADAH4-IT:D by Micron Technology is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in industrial temperatures (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAH4:D by Micron Technology

MT29F4G16ABADAH4:D

Micron Technology

Micron Technology's MT29F4G16ABADAH4:D is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in asynchronous mode with a max access time of 25ns. Ideal for commercial applications requiring fast data storage and retrieval in compact devices.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAWP-IT:D by Micron Technology

MT29F4G16ABADAWP-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 16;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

16

1

4K

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F4G16ABADAWP:D by Micron Technology

MT29F4G16ABADAWP:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 256MX16;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

16

1

4K

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

260

3.3

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F4G16ABBDAH4:D by Micron Technology

MT29F4G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F4G16ABBDAHC-IT:D by Micron Technology

MT29F4G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 25 ns;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABBDAHC:D by Micron Technology

MT29F4G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F8G08ADBDAH4-IT:D by Micron Technology

MT29F8G08ADBDAH4-IT:D

Micron Technology

MT29F8G08ADBDAH4-IT:D by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, operating in industrial temperature range. Featuring 2K word page size and 128K word sector size, it offers fast access time of 25ns for applications requiring high-speed data storage and retrieval. With a low standby current of 0.00005A, it is suitable for power-sensitive devices.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F8G08ADBDAH4:D by Micron Technology

MT29F8G08ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADADAH4-IT:D by Micron Technology

MT29F8G16ADADAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3.3;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADBDAH4-IT:D by Micron Technology

MT29F8G16ADBDAH4-IT:D

Micron Technology

MT29F8G16ADBDAH4-IT:D by Micron is a 512MX16 SLC NAND flash memory with 1.8V supply, 85°C max temp, and 25ns access time. Ideal for industrial applications requiring fast, reliable data storage in a compact GRID ARRAY package.

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

PC28F320J3F75B by Micron Technology

PC28F320J3F75B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 33554432 bit;

75 ns

8

YES

YES

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

N25Q512A13GSFH0E by Micron Technology

N25Q512A13GSFH0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5 mm;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q512A83G12A0F by Micron Technology

N25Q512A83G12A0F

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G12H0F by Micron Technology

N25Q512A83G12H0F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

M25P32-VMW3GB by Micron Technology

M25P32-VMW3GB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Organization: 4MX8;

75 MHz

S-PDSO-G8

5.285 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

260

2.7

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

30

5.285 mm

N25Q032A13E1240E by Micron Technology

N25Q032A13E1240E

Micron Technology

Micron Technology's N25Q032A13E1240E is a NOR type Flash Memory with 32Mx1 organization, operating at 108MHz. It has a max supply voltage of 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact devices.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

FLASH

1

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11EF740E by Micron Technology

N25Q128A11EF740E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Length: 6 mm;

108 MHz

R-PDSO-N8

6 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.9 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

N25Q128A31EF840E by Micron Technology

N25Q128A31EF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Programming Voltage (V): 1.8;

108 MHz

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

1 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

M25P16-VMF6PBA by Micron Technology

M25P16-VMF6PBA

Micron Technology

M25P16-VMF6PBA by Micron Technology is a 2MX8 NOR type flash memory with 16777216 bit density. It operates at 75 MHz clock frequency, has 100000 write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring reliable data storage with low power consumption.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

16777216 bit

FLASH

8

1

16

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

2.7

Not Qualified

2.3 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

M25P16-VMN3YPB by Micron Technology

M25P16-VMN3YPB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P40-VMC6GB by Micron Technology

M25P40-VMC6GB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SON; Package Shape: RECTANGULAR; Technology: CMOS;

50 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

4194304 bit

FLASH

8

8

524288 words

512K

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

2.7

Not Qualified

SPI

.00001 Amp

Flash Memories

15 mA

YES

CMOS

INDUSTRIAL

NO LEAD

.8 mm

DUAL

30

NOR TYPE

HARDWARE/SOFTWARE

M25P40-VMN6PBA by Micron Technology

M25P40-VMN6PBA

Micron Technology

M25P40-VMN6PBA by Micron Technology is a NOR type Flash Memory with 512Kx8 organization, SPI serial bus type, and 50 MHz clock frequency. It is used in industrial applications for storing data securely with 100000 write/erase cycles endurance.

50 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4194304 bit

FLASH

8

8

524288 words

512K

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

2.7

Not Qualified

SPI

.00001 Amp

Flash Memories

15 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

HARDWARE/SOFTWARE

M29W640GB7AN6E by Micron Technology

M29W640GB7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

8

BOTTOM

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NOR TYPE

12 mm

M25P10-AVMN6PYA by Micron Technology

M25P10-AVMN6PYA

Micron Technology

Micron Technology's M25P10-AVMN6PYA is a 128Kx8 NOR Flash Memory with 1048576-bit memory density. Operating at up to 50MHz, it supports synchronous mode and has a programming voltage of 2.7V. Ideal for industrial applications requiring reliable data storage in temperatures ranging from -40°C to 85°C.

50 MHz

R-PDSO-G8

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.7

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

DUAL

30

NOR TYPE

M25P10-V6D11 by Micron Technology

M25P10-V6D11

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; Package Code: DIE; Package Shape: UNSPECIFIED; Terminal Form: NO LEAD; Nominal Supply Voltage / Vsup (V): 3;

50 MHz

X-XUUC-N

1048576 bit

FLASH

8

1

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

SERIAL

NOT SPECIFIED

2.7

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

NOR TYPE

M29W512GH7AN6E by Micron Technology

M29W512GH7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

80 ns

8

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

2.7

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

N25Q512A13G1241E by Micron Technology

N25Q512A13G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 512MX1;

108 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

MT29F2G08AADWP-ET:DTR by Micron Technology

MT29F2G08AADWP-ET:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

JS28F640P33BF70A by Micron Technology

JS28F640P33BF70A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 4M;

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

4,63

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

N25Q064A13ESEH0E by Micron Technology

N25Q064A13ESEH0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.285 mm

MT29F1G08ABBDAH4-IT:DTR by Micron Technology

MT29F1G08ABBDAH4-IT:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

25 ns

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABBFAH4-IT:F by Micron Technology

MT29F2G08ABBFAH4-IT:F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MT29F16G08ABACAWP-IT:C by Micron Technology

MT29F16G08ABACAWP-IT:C

Micron Technology

Micron Technology's MT29F16G08ABACAWP-IT:C is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85°C. It features a 4K page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

30 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

N25Q128A13E1440E by Micron Technology

N25Q128A13E1440E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

108 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT29F128G08CEAAAC5:A by Micron Technology

MT29F128G08CEAAAC5:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

R-PBGA-B52

18 mm

137438953472 bit

FLASH

8

1

52

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BUTT

BOTTOM

30

MLC NAND TYPE

14 mm

MT29F128G08CECABH1-10Z:A by Micron Technology

MT29F128G08CECABH1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12:A by Micron Technology

MT29F128G08CECABH1-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12ITZ:A by Micron Technology

MT29F128G08CECABH1-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Type: MLC NAND TYPE;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12Z:A by Micron Technology

MT29F128G08CECABH1-12Z:A

Micron Technology

Micron Technology's MT29F128G08CECABH1-12Z:A is a 16GX8 MLC NAND flash memory with 137.4Gb density and operates at 3.3V. It features synchronous operation, very thin profile grid array package, and commercial temperature grade suitability for various applications requiring high-density storage in compact devices.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWP:A by Micron Technology

MT29F128G08CFAAAWP:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWP:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating in asynchronous mode. It features a memory density of 137.4Gb and is suitable for commercial applications requiring high-speed parallel data processing at temperatures ranging from 0 to 70°C.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWPIT:A by Micron Technology

MT29F128G08CFAAAWPIT:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWPIT:A is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 3.3V and -40 to 85°C. It features a small outline package, parallel interface, and industrial temperature grade suitable for various embedded applications.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWPITZ:A by Micron Technology

MT29F128G08CFAAAWPITZ:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWPITZ:A is a 16GX8 MLC NAND Flash Memory with 137.4Gb density, operating at 3.3V and -40 to 85°C. It features a small outline package, parallel interface, and is ideal for industrial applications requiring high memory capacity in compact designs.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm