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Micron Technology Flash Memory 937

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M45PE10S-VMN6P by Micron Technology

M45PE10S-VMN6P

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

75 MHz

R-PDSO-G8

4.9 mm

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

1.75 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

23 ms

M45PE10S-VMP6G by Micron Technology

M45PE10S-VMP6G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

75 MHz

R-PDSO-N8

6 mm

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

23 ms

N25Q256A13EF840E by Micron Technology

N25Q256A13EF840E

Micron Technology

Micron Technology's N25Q256A13EF840E is a NOR type Flash Memory with 256Mx1 organization, operating in synchronous mode at up to 108MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268435456 bits and supports SPI serial bus communication.

108 MHz

20

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG

SERIAL

260

Not Qualified

1 mm

SPI

.00025 Amp

20 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A13EF840F by Micron Technology

N25Q256A13EF840F

Micron Technology

N25Q256A13EF840F by Micron Technology is a NOR flash memory with 32MX8 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85 °C and has an endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact devices.

SPI-COMPATIBLE SERIAL BUS INTERFACE

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

NAND128W3AABN6E by Micron Technology

NAND128W3AABN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

35 ns

R-PDSO-G48

e3

18.4 mm

134217728 bit

FLASH

8

1

48

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MTFDDAC128MAM-1J1 by Micron Technology

MTFDDAC128MAM-1J1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Programming Voltage (V): 5; No. of Functions: 1; Package Body Material: UNSPECIFIED;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

9.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAC256MAM-1K1 by Micron Technology

MTFDDAC256MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Terminal Form: NO LEAD; Package Body Material: UNSPECIFIED;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

9.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK128MAM-1J1 by Micron Technology

MTFDDAK128MAM-1J1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Length: 100.2 mm; Surface Mount: YES; No. of Functions: 1;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK256MAM-1K1 by Micron Technology

MTFDDAK256MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Length: 100.2 mm; Surface Mount: YES; Width: 69.85 mm;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK512MAM-1K1 by Micron Technology

MTFDDAK512MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; No. of Functions: 1; Technology: CMOS; Maximum Seated Height: 7 mm;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

M29W800FB70ZA3SE by Micron Technology

M29W800FB70ZA3SE

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

M29W800FT70ZA3SE by Micron Technology

M29W800FT70ZA3SE

Micron Technology

M29W800FT70ZA3SE by Micron Technology is a 512KX16 Flash Memory with an operating mode of asynchronous and a max access time of 70 ns. It is commonly used in automotive applications due to its temperature grade and thin profile package style.

70 ns

TOP BOOT BLOCK

8

TOP

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

PC28F00AP30TFA by Micron Technology

PC28F00AP30TFA

Micron Technology

Micron Technology's PC28F00AP30TFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 64M words capacity and supports parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

4,1023

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

JS28F064M29EWHA by Micron Technology

JS28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

128

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

PC28F512M29EWHA by Micron Technology

PC28F512M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

100 ns

8

YES

YES

YES

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

512

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.000225 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

M25P80-VMC6G by Micron Technology

M25P80-VMC6G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VSON; Package Shape: RECTANGULAR; Qualification: Not Qualified;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

4 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

VSON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

AEC-Q100

.6 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

.8 mm

DUAL

NOT SPECIFIED

NOR TYPE

3 mm

15 ms

HARDWARE/SOFTWARE

M25P80-VMN3PB by Micron Technology

M25P80-VMN3PB

Micron Technology

M25P80-VMN3PB by Micron Technology is a NOR flash memory with 8MX1 organization, 8388608-bit memory density, and SPI serial bus type. It operates at 75 MHz clock frequency and is suitable for automotive applications due to AEC-Q100 screening level. With 100000 write/erase cycles endurance, it offers reliable data storage in a compact small outline package.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

125 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

AEC-Q100

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

15 ms

HARDWARE/SOFTWARE

M25P80-VMN6PBA by Micron Technology

M25P80-VMN6PBA

Micron Technology

M25P80-VMN6PBA by Micron Technology is an 8MX1 NOR flash memory with 8388608-bit density. It operates in synchronous mode at a max clock frequency of 75 MHz and supports SPI serial bus type. Ideal for industrial applications, it offers 100000 write/erase cycles endurance and has a min data retention time of 20 years.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

AEC-Q100

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

15 ms

HARDWARE/SOFTWARE

JS28F128P30TF75A by Micron Technology

JS28F128P30TF75A

Micron Technology

Micron Technology's JS28F128P30TF75A is a NOR flash memory with 8MX16 organization, operating at 1.8V. It features synchronous operation, 8388608 words capacity, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

75 ns

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

N25Q032A11ESF40G by Micron Technology

N25Q032A11ESF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2 V;

108 MHz

R-PDSO-G16

10.3 mm

33554432 bit

FLASH

32

1

16

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX32

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

7.5 mm

N25Q064A13EF840E by Micron Technology

N25Q064A13EF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VSON; Package Shape: RECTANGULAR; Qualification: Not Qualified;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

67108864 bit

FLASH

64

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

VSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q064A13ESE40E by Micron Technology

N25Q064A13ESE40E

Micron Technology

Micron Technology's N25Q064A13ESE40E is a NOR type Flash Memory with 1MX64 organization, 108 MHz clock frequency, and SPI serial bus. It operates at -40 to 85 °C, has 100K Write/Erase cycles endurance, and is ideal for industrial applications requiring high-speed data storage in compact devices.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

64

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q064A13ESE40G by Micron Technology

N25Q064A13ESE40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

64

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q064A13ESF40F by Micron Technology

N25Q064A13ESF40F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

67108864 bit

FLASH

64

1

16

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q064A13ESF40G by Micron Technology

N25Q064A13ESF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Length: 10.3 mm;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

67108864 bit

FLASH

64

1

16

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

JS28F064M29EWBA by Micron Technology

JS28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

PC48F4400P0VB0EE by Micron Technology

PC48F4400P0VB0EE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

ASYNCHRONOUS READ MODE

BOTTOM/TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

8, 510

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00042 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F128P30BF65A by Micron Technology

PC28F128P30BF65A

Micron Technology

Micron Technology's PC28F128P30BF65A is a 1.8V NOR Flash Memory with 8MX16 organization, operating from -40 to 85°C. Featuring 8388608 words and 134217728 bits memory density, it offers fast access time of 65ns for industrial applications requiring reliable non-volatile storage solutions.

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F00BM29EWHA by Micron Technology

PC28F00BM29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Data Polling: YES;

100 ns

8

YES

YES

YES

R-PBGA-B64

e1

13 mm

2147483648 bit

FLASH

16

1

2K

64

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00048 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

JS28F128P33TF70A by Micron Technology

JS28F128P33TF70A

Micron Technology

Micron Technology's JS28F128P33TF70A is a NOR flash memory with 8MX16 organization, 8388608 words capacity, and 16K/64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring high-density memory with fast access speeds.

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

PC28F00AG18FE by Micron Technology

PC28F00AG18FE

Micron Technology

Micron Technology's PC28F00AG18FE is a 64MX16 NOR flash memory with 512 sectors, operating at 1.8V. It features synchronous operation, AEC-Q100 screening, and industrial temperature grade. With a max access time of 96ns and memory density of 1073741824 bits, it is ideal for automotive applications requiring high-speed data storage in compact spaces.

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

512

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.000185 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F128G18FE by Micron Technology

PC28F128G18FE

Micron Technology

Micron Technology's PC28F128G18FE is a 1.8V NOR Flash Memory with 8MX16 organization, 128K sector size, and 8388608 words capacity. Operating in synchronous mode with a programming voltage of 2.7V, it offers fast access time of 96ns. Ideal for applications requiring high-density memory storage and common flash interface integration.

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

64

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-30 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

1.2 mm

128K

.000115 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F256G18FE by Micron Technology

PC28F256G18FE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

128

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.00013 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F512G18FE by Micron Technology

PC28F512G18FE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

96 ns

SUBGROUP FL1.8V

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

256

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

AEC-Q100

1.2 mm

128K

.00016 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

N25Q128A11E1240E by Micron Technology

N25Q128A11E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11E1241E by Micron Technology

N25Q128A11E1241E

Micron Technology

Micron Technology's N25Q128A11E1241E is a 128M NOR flash memory with 108 MHz clock frequency, suitable for industrial applications. It operates at 1.8V, has 100000 write/erase cycles endurance, and uses SPI serial bus type. The package is rectangular in shape with a thin profile and terminal finish of tin silver copper.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11EF840E by Micron Technology

N25Q128A11EF840E

Micron Technology

Micron Technology's N25Q128A11EF840E is a NOR type Flash Memory with 128Mx1 organization, operating at 108MHz clock frequency. It has a small outline package style and is suitable for industrial temperature grade applications requiring high endurance of 100000 write/erase cycles.

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8

1.8

Not Qualified

1 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11ESE40G by Micron Technology

N25Q128A11ESE40G

Micron Technology

N25Q128A11ESE40G by Micron Technology is a NOR flash memory with 128Mx1 organization, operating at 108MHz. It features a programming voltage of 3V and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact form factors.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

1.8

3

Not Qualified

2.16 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q128A11ESF40G by Micron Technology

N25Q128A11ESF40G

Micron Technology

Micron Technology's N25Q128A11ESF40G is a NOR type Flash Memory with 128Mx1 organization, operating at 108MHz clock frequency. It has a small outline package style and supports SPI serial bus type for industrial applications. With 100000 write/erase cycles endurance, it offers high performance in a compact form factor.

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

1

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

1.8

Not Qualified

2.65 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

PC28F128P30TF65A by Micron Technology

PC28F128P30TF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC28F128J3F75G by Micron Technology

RC28F128J3F75G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

75 ns

8

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

10 mm

RC28F640P33BF60A by Micron Technology

RC28F640P33BF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

60 ns

BOTTOM

YES

YES

NO

R-PBGA-B64

e0

10 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

NOT SPECIFIED

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

8 mm

PC28F640P30TF65B by Micron Technology

PC28F640P30TF65B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F512P30BFB by Micron Technology

PC28F512P30BFB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

100 ns

BOTTOM BOOT

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

4,511

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,20

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

PC28F512M29EWHG by Micron Technology

PC28F512M29EWHG

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

100 ns

8

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

RC28F256P30TFE by Micron Technology

RC28F256P30TFE

Micron Technology

Micron Technology's RC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous operation, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP

YES

YES

NO

R-PBGA-B64

e0

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC28F00AP30TFA by Micron Technology

RC28F00AP30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Technology: CMOS;

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

4,1023

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

235

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC28F256P30BFF by Micron Technology

PC28F256P30BFF

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

ASYNCHRONOUS READ MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm