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N25Q128A11EF840E

Micron Technology

N25Q128A11EF840E by Micron Technology

Micron Technology's N25Q128A11EF840E is a NOR type Flash Memory with 128Mx1 organization, operating at 108MHz clock frequency. It has a small outline package style and is suitable for industrial temperature grade applications requiring high endurance of 100000 write/erase cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 23,800 parts In-Stock

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Vyrian

USA . 4,493 parts In-Stock

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4,493

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Digiode

USA . 2,041 parts In-Stock

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2,041

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Infinite Electronics LLP

India . 284 parts In-Stock

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284

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Cyclops Electronics Ltd

UK . 80 parts In-Stock

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80

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Connect4Technologies Inc.

Canada . 17 parts In-Stock

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17

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Prism Electronics

USA . 8 parts In-Stock

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8

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EPE Components Inc.

USA . 2 parts In-Stock

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2

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Bristol Electronics

USA . 2 parts In-Stock

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2

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NexGen Digital

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 35 parts In-Stock

1+ parts

$9.040

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35

$9.040

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Ampacity Inc.

Singapore . 750 parts In-Stock

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$17.000

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750

$17.000

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S.R.D Solutions

India . 42,000 parts In-Stock

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Perfect Parts

USA . 12,526 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,556 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 469 parts In-Stock

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469

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Sternenhof Electronics (Excess)

Switzerland . 448 parts In-Stock

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448

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Kepictronics

USA . 434 parts In-Stock

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434

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Corphita

USA . 254 parts In-Stock

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254

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iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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EMSNET (Excess)

USA . 34 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the N25Q128A11EF840E by Micron Technology. As a leading manufacturer in the industry, Micron Technology's Flash Memory offers unparalleled quality and reliability. Ideal for a wide range of applications, this product provides seamless performance and enhanced functionality. With a focus on value and customer satisfaction, the N25Q128A11EF840E delivers undeniable benefits to users looking for top-notch memory solutions. Trust Micron Technology to elevate your experience with advanced memory technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the flash memory, ensuring it can withstand various environmental conditions.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for faster and more efficient data transfer, making this flash memory a suitable choice for high-performance applications.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps in reducing power consumption and extending the battery life of devices using this flash memory.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory is suitable for use in industrial environments where temperature fluctuations may occur.

Memory Density: 134217728 bit

The high memory density of 134217728 bits allows for storing a large amount of data in a compact form factor, making this flash memory ideal for devices with limited space.

Technical Specifications

Flash Memory N25Q128A11EF840E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A11EF840E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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