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N25Q064A13ESED0G

Micron Technology

N25Q064A13ESED0G by Micron Technology

The Micron Technology N25Q064A13ESED0G is a NOR type Flash Memory with 64Mx1 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85°C and has a small outline package style. Ideal for industrial applications requiring high-speed data storage with up to 100,000 write/erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 13,700 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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13,700

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-

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Vyrian

USA . 7,492 parts In-Stock

1+ parts

-

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-

1k+ parts

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10k+ parts

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7,492

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Digiode

USA . 2,436 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,436

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-

-

-

Nova Conductors

Japan . 92 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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92

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,211 parts In-Stock

1+ parts

$13.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,211

$13.000

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-

-

AZTECH Wire

Italy . 367 parts In-Stock

1+ parts

$16.673

100+ parts

-

1k+ parts

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10k+ parts

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367

$16.673

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-

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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25,000

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-

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Corphita

USA . 1,151 parts In-Stock

1+ parts

-

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1,151

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,000

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-

-

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Microchip USA

USA . 223 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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223

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Overview

Unlock the power of reliable data storage with the N25Q064A13ESED0G by Micron Technology. As a trusted manufacturer in the industry, Micron delivers high-quality flash memory products that are ideal for a wide range of applications. Whether you're looking to boost the performance of your devices or enhance their storage capabilities, this product offers unparalleled value, benefits, and advantages. Experience seamless operation, superior endurance, and maximum supply voltage of 3.6V, making it the perfect solution for industrial-grade projects. Elevate your technology with Micron's N25Q064A13ESED0G and enjoy peace of mind knowing you have a reliable partner in data storage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer product lifespan.

Surface Mount: YES

Easy to install and more compact, making it suitable for various devices and applications.

Operating Mode: SYNCHRONOUS

Allows for faster data transfer and improved performance, ideal for high-speed read/write operations.

Nominal Supply Voltage / Vsup (V): 3

Compatible with a common supply voltage, making it easier to integrate into existing systems.

Write Protection: HARDWARE/SOFTWARE

Offers additional security features to prevent accidental data loss or unauthorized access.

Endurance: 100000 Write/Erase Cycles

Provides reliability and longevity, ensuring the product can withstand frequent read/write operations.

Technical Specifications

Flash Memory N25Q064A13ESED0G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

2.16 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

5.285 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q064A13ESED0G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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