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MT29F8G08ADBFAH4-AAT:FTR

Micron Technology

MT29F8G08ADBFAH4-AAT:FTR by Micron Technology

Micron Technology's MT29F8G08ADBFAH4-AAT:FTR is a SLC NAND flash memory with 1GX8 organization, 8-bit memory width, and 8589934592 bit density. It operates in ASYNCHRONOUS mode with a temperature range of -40 to 105 °C. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

MT29F8G08ADBFAH4-AAT:FTR by Micron Technology
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Vyrian

USA . 5,763 parts In-Stock

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Digiode

USA . 1,057 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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AZTECH Wire

Italy . 538 parts In-Stock

1+ parts

$14.703

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538

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Ampacity Inc.

Singapore . 886 parts In-Stock

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$30.000

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886

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 2,348 parts In-Stock

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Argo Parts USA

USA . 1,140 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 534 parts In-Stock

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Overview

Experience the next level of performance and reliability with the MT29F8G08ADBFAH4-AAT:FTR by Micron Technology. As a leading manufacturer in the industry, Micron Technology has consistently delivered top-quality flash memory products. Ideal for a wide range of applications, this flash memory device offers unparalleled value and benefits to customers. Whether you're looking to enhance the speed and efficiency of your devices or improve overall performance, the MT29F8G08ADBFAH4-AAT:FTR is the perfect solution for all your memory needs. Trust Micron Technology to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Surface Mount: YES

This feature allows for easy and convenient installation on circuit boards, making it ideal for applications where space is limited.

Operating Mode: ASYNCHRONOUS

The asynchronous operation provides flexibility and efficiency in data transfer, making it suitable for various applications that require quick and efficient performance.

Package Style (Meter): GRID ARRAY

The grid array package style offers high density and reliability, perfect for applications that demand high performance and durability.

Maximum Operating Temperature: 105 °C

With a high operating temperature range, this flash memory can withstand harsh environments and extended use without compromising performance.

Organization: 1GX8

The 1GX8 organization allows for efficient data storage and retrieval, making it a reliable choice for applications that require high-speed data processing.

Minimum Operating Temperature: -40 °C

Able to operate in low temperatures, this flash memory is suitable for a wide range of environments and applications, providing consistent performance in challenging conditions.

Terminal Position: BOTTOM

The bottom terminal position offers easy and secure connections, ensuring a stable and reliable connection in various electronic devices.

Type: SLC NAND TYPE

SLC NAND type technology provides fast and efficient data storage, making it an excellent choice for applications that require high reliability and performance.

Technology: CMOS

Incorporating CMOS technology ensures low power consumption and high speed, making this flash memory suitable for battery-powered devices and applications that require energy efficiency.

Terminal Form: BALL

The ball terminal form offers a secure and reliable connection, making it ideal for applications that require stable and durable performance.

No. of Words: 1073741824 words

With a large number of words, this flash memory can store and process a vast amount of data efficiently, making it suitable for data-intensive applications.

Memory Width: 8

An 8-bit memory width provides high-speed data transfer and processing capabilities, making this flash memory ideal for applications that require quick response times.

No. of Words Code: 1G

The 1G code denotes a large storage capacity, making this flash memory suitable for applications that require extensive data storage capabilities.

Memory Density: 8589934592 bit

With a high memory density, this flash memory can store a large amount of data in a compact package, making it a space-saving and efficient choice.

Memory IC Type: FLASH

The flash memory IC type offers fast read and write speeds, making it ideal for applications that require high performance and reliability.

Technical Specifications

Flash Memory MT29F8G08ADBFAH4-AAT:FTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

X-PBGA-B

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX8

Package Body Material:

UNSPECIFIED

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

SLC NAND TYPE

Trade Compliance

MT29F8G08ADBFAH4-AAT:FTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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