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32 Flash Memory 85

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
AT49F002AT-55JI by Atmel

AT49F002AT-55JI

Atmel

AT49F002AT-55JI by Atmel is a 256Kx8 NOR flash memory chip with 262144 words, offering 10000 write/erase cycles. Operating at an industrial temperature grade of -40 to 85 °C, it supports asynchronous mode and has a max access time of 55 ns. Ideal for applications requiring fast data polling and reliable non-volatile memory storage.

55 ns

TOP

YES

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

25 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

AT29C040A-10TC by Atmel

AT29C040A-10TC

Atmel

Atmel's AT29C040A-10TC is a 512Kx8 NOR flash memory with 2K sectors, operating at 5V. It features a page size of 256 words, parallel interface, and fast access time of 100ns. Ideal for commercial applications requiring high-speed data storage in compact devices.

100 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

240

5

5

Not Qualified

1.2 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

M50FLW040AK5G by STMicroelectronics

M50FLW040AK5G

STMicroelectronics

M50FLW040AK5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11 ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring fast data storage and retrieval.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080AK5G by STMicroelectronics

M50FLW080AK5G

STMicroelectronics

M50FLW080AK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features fast access times of 11 ns, operates b/w -20 °C to 85 °C, and is ideal for embedded applications. Its compact chip carrier design ensures efficient surface mounting in various electronic devices.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080ANB5G by STMicroelectronics

M50FLW080ANB5G

STMicroelectronics

M50FLW080ANB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW080BK5G by STMicroelectronics

M50FLW080BK5G

STMicroelectronics

M50FLW080BK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.3V, features a quad terminal position, and supports applications in embedded systems. With a temp range of -20 °C to 85 °C, it's ideal for reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080BNB5G by STMicroelectronics

M50FLW080BNB5G

STMicroelectronics

M50FLW080BNB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

CAT28F512H-12 by Catalyst Semiconductor

CAT28F512H-12

Catalyst Semiconductor

CAT28F512H-12 by Catalyst Semiconductor is a 64KX8 NOR Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 120 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

2A

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

12

Not Qualified

1.2 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

8 mm

CAT28F512HI-90 by Catalyst Semiconductor

CAT28F512HI-90

Catalyst Semiconductor

CAT28F512HI-90 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 90ns. Ideal for industrial applications requiring reliable non-volatile memory solutions.

90 ns

YES

NO

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

2A

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

12

Not Qualified

1.2 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

8 mm

CAT28F512L-12 by Catalyst Semiconductor

CAT28F512L-12

Catalyst Semiconductor

CAT28F512L-12 by Catalyst Semiconductor is a 64Kx8 NOR Flash Memory with 100000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 120ns and supports asynchronous mode. Ideal for applications requiring high endurance and fast data access in commercial temperature environments.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDIP-T32

e3

42.03 mm

524288 bit

FLASH

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12

Not Qualified

5.08 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

NOR TYPE

15.24 mm

CAT28F512LI-12 by Catalyst Semiconductor

CAT28F512LI-12

Catalyst Semiconductor

CAT28F512LI-12 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit memory density. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 120 ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDIP-T32

e3

42.03 mm

524288 bit

FLASH

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12

Not Qualified

5.08 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

NOR TYPE

15.24 mm

M50FW080K5G by STMicroelectronics

M50FW080K5G

STMicroelectronics

M50FW080K5G from STMicroelectronics is a NOR flash memory with 1M words capacity, operating at 3.3V. It features a fast access time of 11 ns and supports asynchronous mode. Ideal for embedded applications, it operates b/w -20 °C to 85 °C in a compact chip carrier package.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW080NB5G by STMicroelectronics

M50FW080NB5G

STMicroelectronics

M50FW080NB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a compact SOIC package, operating at 3.3V. It features fast access times of 11 ns and supports asynchronous operation, making it ideal for embedded applications. With a wide temp range (-20 °C to 85 °C), it's perfect for diverse environments.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FW040K5G by STMicroelectronics

M50FW040K5G

STMicroelectronics

M50FW040K5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW040NB5G by STMicroelectronics

M50FW040NB5G

STMicroelectronics

M50FW040NB5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC-32 package, ideal for space-constrained applications. With a temp range of -20 °C to 85 °C, it's perfect for industrial use.

11 ns

YES

NO

R-PDSO-G32

e3/e6

14 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

AT29BV010A-12JU by Atmel

AT29BV010A-12JU

Atmel

Atmel's AT29BV010A-12JU is a 128Kx8 NOR flash memory chip with 3V nominal voltage. Operating in asynchronous mode, it offers fast access time of 120ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3/3.3

2.7

Not Qualified

3.556 mm

8K,112K,8K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29C040A-90TU by Atmel

AT29C040A-90TU

Atmel

Atmel's AT29C040A-90TU is a 512Kx8 NOR flash memory with 2K sectors and 256-word pages. Operating at 5V, it offers fast access time of 90ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in small outline packages.

90 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29LV020-10TU by Atmel

AT29LV020-10TU

Atmel

Atmel's AT29LV020-10TU is a 256Kx8 NOR flash memory with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 100ns access time, and 1K sectors. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in compact designs.

100 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

256

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

8 mm

20 ms

AT29LV512-12TU by Atmel

AT29LV512-12TU

Atmel

Atmel's AT29LV512-12TU is a 64KX8 NOR flash memory with 512 sectors, operating at 3.3V. It offers 10000 write/erase cycles, 120ns access time, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

120 ns

NO

YES

10000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

3

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

128

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

128

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

20 ms

AT29C512-70JU by Atmel

AT29C512-70JU

Atmel

AT29C512-70JU by Atmel is a 64KX8 NOR type flash memory chip with 512 sectors of 128 words each. Operating at 5V, it offers fast access time of 70ns and endurance of 10k write/erase cycles. Ideal for industrial applications requiring reliable parallel memory storage in compact form factor.

70 ns

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-90JU by Atmel

AT29C512-90JU

Atmel

AT29C512-90JU by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It has an endurance of 10k write/erase cycles, max access time of 90ns, and supports data polling. Ideal for industrial applications requiring reliable non-volatile memory with fast access times.

90 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-90JU by Atmel

AT29C010A-90JU

Atmel

AT29C010A-90JU by Atmel is a 128Kx8 NOR flash memory chip with asynchronous operation, 90 ns access time, and 5V programming voltage. It is ideal for industrial applications requiring fast data polling and 3-STATE output characteristics in a compact chip carrier package.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C020-70TU by Atmel

AT29C020-70TU

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Toggle Bit: YES;

70 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C010A-70JU by Atmel

AT29C010A-70JU

Atmel

Atmel's AT29C010A-70JU is a 128Kx8 NOR flash memory chip with 131,072 words. Operating at 5V, it has a max access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring fast data polling and parallel programming with a temperature range of -40 to 85°C.

70 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

MX29LV040CQI-90G by Macronix

MX29LV040CQI-90G

Macronix

MX29LV040CQI-90G by Macronix is a 512KX8 NOR flash memory with a max access time of 90 ns. It operates at a nominal voltage of 3V and has a temperature grade of industrial. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

90 ns

YES

YES

YES

R-PQCC-J32

e3

14.05 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

3

Not Qualified

3.55 mm

64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

MX29F040CQC-70G by Macronix

MX29F040CQC-70G

Macronix

Macronix MX29F040CQC-70G is a 512Kx8 NOR flash memory chip with 70ns access time and 100,000 write/erase cycles. Ideal for commercial applications requiring fast data polling and asynchronous operation in a compact chip carrier package.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

14.05 mm

4194304 bit

FLASH

8

3

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

5

5

Not Qualified

3.55 mm

64K

.000005 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B70K6E by STMicroelectronics

M29F010B70K6E

STMicroelectronics

M29F010B70K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and 70 ns max access time. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B45K6E by STMicroelectronics

M29F010B45K6E

STMicroelectronics

M29F010B45K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B70N6E by STMicroelectronics

M29F010B70N6E

STMicroelectronics

M29F010B70N6E from STMicroelectronics is a NOR flash memory with 128K x 8 organization, operating at 5V. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29F040B45K6E by STMicroelectronics

M29F040B45K6E

STMicroelectronics

M29F040B45K6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous operating mode, max access time of 45 ns, and supports up to 100k write/erase cycles. This compact chip carrier design ensures reliable performance in harsh environments.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F040B70N6E by STMicroelectronics

M29F040B70N6E

STMicroelectronics

M29F040B70N6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous mode, operates b/w -40 °C to 85 °C, and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B55K6E by STMicroelectronics

M29W040B55K6E

STMicroelectronics

M29W040B55K6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous mode, 100k write/erase cycles, and operates b/w -40 °C to 85 °C. Its compact design ensures efficient surface mounting in various devices.

55 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B70N6E by STMicroelectronics

M29W040B70N6E

STMicroelectronics

M29W040B70N6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous operating mode, 70 ns max access time, and supports up to 100K write/erase cycles. Its compact SOIC package ensures efficient space utilization in designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B90K1E by STMicroelectronics

M29W040B90K1E

STMicroelectronics

M29W040B90K1E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles, making it ideal for embedded applications. With its compact chip carrier design and commercial temperature grade, it's perfect for space-constrained devices.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

3

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W010B70K6E by STMicroelectronics

M29W010B70K6E

STMicroelectronics

M29W010B70K6E from STMicroelectronics is a NOR flash memory with a 128Kx8 organization, operating at 3.3V and supporting asynchronous mode. It features an industrial temperature range of -40 °C to 85 °C and offers up to 100,000 write/erase cycles. Ideal for embedded applications, it ensures reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W010B70N6E by STMicroelectronics

M29W010B70N6E

STMicroelectronics

M29W010B70N6E from STMicroelectronics is a NOR flash memory with a 128K x 8 organization, operating at 3.3V and featuring a max access time of 70 ns. It supports asynchronous operation and offers industrial-grade temperature range (-40 °C to 85 °C). Ideal for embedded applications, it ensures high endurance with up to 100k write/erase cycles.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

SST39SF010A-70-4C-WHE-T by Microchip Technology

SST39SF010A-70-4C-WHE-T

Microchip Technology

SST39SF010A-70-4C-WHE-T by Microchip is a NOR flash memory with 128Kx8 organization, operating at 5V. It offers 100000 Write/Erase cycles, 70ns access time, and supports asynchronous mode. Ideal for applications requiring fast data access and reliable non-volatile storage in commercial temperature environments.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

1048576 bit

FLASH

8

1

1

32

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm