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TNETV2685FIDZUT9

Texas Instruments

TNETV2685FIDZUT9 by Texas Instruments

TNETV2685FIDZUT9 by Texas Instruments is a DSP with 32-bit external data bus, 900 MHz clock frequency, and 14-bit address bus width. Ideal for digital signal processing applications due to its low power mode, CMOS technology, and peak reflow temperature of 245°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,589 parts In-Stock

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Digiode

USA . 4,224 parts In-Stock

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AZTECH Wire

Italy . 264 parts In-Stock

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$18.060

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Parana Technologies

USA . 965 parts In-Stock

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$19.689

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$19.682

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ChromeModa Solutions

Germany . 2,812 parts In-Stock

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$22.123

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$18.141

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IDEA Electronic Components Group

UK . 691 parts In-Stock

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$21.017

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$19.911

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Corohmni

South Africa . 654 parts In-Stock

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$30.430

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One Stop Electronics

USA . 1,187 parts In-Stock

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Advanced Electronics

New Zealand . 900 parts In-Stock

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$59.629

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$54.262

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Component Stockers USA

USA . 493 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 25,937 parts In-Stock

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Corphita

USA . 3,471 parts In-Stock

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DigiPath Technology Company

USA . 1,527 parts In-Stock

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Microchip USA

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Overview

Unleash the power of cutting-edge technology with the TNETV2685FIDZUT9 by Texas Instruments. As a leader in digital signal processors, Texas Instruments delivers unparalleled quality and reliability in every product. This DSP is perfect for applications requiring high-speed processing and low power consumption. Experience seamless performance and enhanced efficiency with the TNETV2685FIDZUT9, giving you the edge you need to stay ahead in today's competitive market. Elevate your projects with Texas Instruments and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product suitable for portable applications.

Maximum Supply Voltage: 1.26 V

Efficient power consumption with a maximum supply voltage of 1.26 V helps in reducing energy usage and extending battery life.

Maximum Clock Frequency: 900 MHz

High clock frequency allows for fast processing of digital signals, making the product ideal for real-time applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency of the digital signal processor.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

Specifically designed as a digital signal processor, ensuring optimized performance for signal processing tasks.

Technical Specifications

Digital Signal Processors (DSPs) TNETV2685FIDZUT9 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

14

Barrel Shifter:

NO

Boundary Scan:

YES

Maximum Clock Frequency:

900 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B520

JESD-609 Code:

e1

Length:

19 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

520

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

245

Maximum Seated Height:

3.3 mm

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

19 mm

Peripheral IC Type:

Trade Compliance

TNETV2685FIDZUT9 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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