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SN74ACT2236-60FN

Texas Instruments

SN74ACT2236-60FN by Texas Instruments

SN74ACT2236-60FN by Texas Instruments is a FIFO chip with 2Kx9 organization, operating at 16.7MHz clock frequency. It has a cycle time of 59.88ns and supports a memory density of 18432 bits. Ideal for industrial applications requiring bi-directional FIFO memory with synchronous operation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,332 parts In-Stock

1+ parts

-

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3,332

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Vyrian

USA . 2,558 parts In-Stock

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-

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2,558

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 655 parts In-Stock

1+ parts

$2.197

100+ parts

-

1k+ parts

$2.707

10k+ parts

-

655

$2.197

-

$2.707

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DigiPath Technology Company

USA . 1,017 parts In-Stock

1+ parts

$2.420

100+ parts

$2.226

1k+ parts

-

10k+ parts

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1,017

$2.420

$2.226

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ChromeModa Solutions

Germany . 2,809 parts In-Stock

1+ parts

$2.469

100+ parts

$2.025

1k+ parts

-

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2,809

$2.469

$2.025

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IDEA Electronic Components Group

UK . 2,369 parts In-Stock

1+ parts

$2.469

100+ parts

-

1k+ parts

$2.222

10k+ parts

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2,369

$2.469

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$2.222

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AZTECH Wire

Italy . 576 parts In-Stock

1+ parts

$7.593

100+ parts

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576

$7.593

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One Stop Electronics

USA . 167 parts In-Stock

1+ parts

$8.000

100+ parts

-

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167

$8.000

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Corphita

USA . 4,500 parts In-Stock

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4,500

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Overview

Experience seamless data transfer with the Texas Instruments SN74ACT2236-60FN FIFO chip carrier. Enjoy the reliability and precision that comes with a product from a trusted manufacturer like Texas Instruments. Whether you're working on industrial automation, telecommunications, or consumer electronics, this device offers high performance and efficiency. With a wide range of applications and top-notch quality, the SN74ACT2236-60FN provides unparalleled value to customers looking for a dependable solution for their FIFO needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the components inside, ensuring long-lasting performance.

Cycle Time: 59.88 ns

Fast cycle time allows for efficient operation and quick data retrieval, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes it compatible with a wide range of systems and easy to integrate.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this FIFO can withstand harsh environmental conditions and industrial settings.

Memory IC Type: BI-DIRECTIONAL FIFO

Bi-directional FIFO design allows for seamless data transfer in both directions, enhancing flexibility and performance.

Technical Specifications

FIFO SN74ACT2236-60FN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

Additional Features:

BYPASS XCVR

Maximum Clock Frequency (fCLK):

16.7 MHz

Cycle Time:

59.88 ns

JESD-30 Code:

S-PQCC-J44

Length:

16.5862 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

44

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC44,.7SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.0004 Amp

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

16.5862 mm

Trade Compliance

SN74ACT2236-60FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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