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SN74ACT72231L-15RJR

Texas Instruments

SN74ACT72231L-15RJR by Texas Instruments

SN74ACT72231L-15RJR by Texas Instruments is a 2Kx9 FIFO chip with 15ns cycle time, operating at 5V. It features synchronous operation, 3-STATE output characteristics, and parallel interface. This FIFO is ideal for applications requiring fast data transfer and temporary storage in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,081 parts In-Stock

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Digiode

USA . 727 parts In-Stock

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Parana Technologies

USA . 1,974 parts In-Stock

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$4.535

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$4.981

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1,974

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$4.981

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IDEA Electronic Components Group

UK . 1,615 parts In-Stock

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$5.095

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$4.586

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$5.095

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ChromeModa Solutions

Germany . 1,159 parts In-Stock

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$5.095

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$4.178

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$5.095

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AZTECH Wire

Italy . 310 parts In-Stock

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$8.905

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One Stop Electronics

USA . 679 parts In-Stock

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$19.000

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Corphita

USA . 1,234 parts In-Stock

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DigiPath Technology Company

USA . 251 parts In-Stock

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$4.594

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Overview

Enhance your electronic designs with the SN74ACT72231L-15RJR by Texas Instruments, a top-quality FIFO memory device that offers fast cycle times and operates in synchronous mode for efficient data transfer. With a commercial temperature grade and 3-state output characteristics, this chip carrier package is perfect for various applications requiring reliable memory storage and retrieval. Trust in Texas Instruments' renowned expertise in semiconductor technology to deliver products that exceed expectations. Upgrade your systems now with the SN74ACT72231L-15RJR for seamless parallel data processing and enhanced performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the FIFO, ensuring longevity and reliability.

Cycle Time: 15 ns

The fast cycle time of 15 nanoseconds allows for quick data transfer, making this FIFO ideal for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5 volts provides compatibility with standard power sources, making integration easier.

Organization: 2KX9

With an organization of 2KX9, this FIFO can store 2048 words with a width of 9 bits each, offering ample memory capacity for data storage.

Technology: CMOS

Using CMOS technology ensures low power consumption and high noise immunity, making this FIFO efficient and reliable for various applications.

Technical Specifications

FIFO SN74ACT72231L-15RJR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

10 ns

Cycle Time:

15 ns

JESD-30 Code:

R-PQCC-J32

Length:

13.995 mm

Memory Density:

18432 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4554 mm

Trade Compliance

SN74ACT72231L-15RJR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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