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SN74ABT3612-15PQG4

Texas Instruments

SN74ABT3612-15PQG4 by Texas Instruments

SN74ABT3612-15PQG4 by Texas Instruments is a FIFO memory with 64x36 organization, operating at 66.7 MHz clock frequency and 15 ns cycle time. It is ideal for applications requiring fast synchronous data transfer in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,570 parts In-Stock

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7,570

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Digiode

USA . 3,284 parts In-Stock

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3,284

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Distributors (Availability)

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Parana Technologies

USA . 2,197 parts In-Stock

1+ parts

$2.099

100+ parts

$194.889

1k+ parts

$1.889

10k+ parts

-

2,197

$2.099

$194.889

$1.889

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DigiPath Technology Company

USA . 274 parts In-Stock

1+ parts

$2.311

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-

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274

$2.311

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ChromeModa Solutions

Germany . 5,130 parts In-Stock

1+ parts

$2.358

100+ parts

$1.934

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-

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5,130

$2.358

$1.934

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IDEA Electronic Components Group

UK . 467 parts In-Stock

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$2.358

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-

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$2.122

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467

$2.358

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$2.122

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AZTECH Wire

Italy . 462 parts In-Stock

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$13.217

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462

$13.217

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One Stop Electronics

USA . 360 parts In-Stock

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$24.000

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360

$24.000

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Corphita

USA . 653 parts In-Stock

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Overview

Experience seamless data transfer and reliable performance with the SN74ABT3612-15PQG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and innovation in their products. The SN74ABT3612-15PQG4 is a high-speed FIFO memory that offers fast cycle times and a synchronous operating mode for efficient data handling. Perfect for a wide range of applications, this FIFO memory provides customers with exceptional value, benefits, and advantages in their designs. Upgrade your system with the SN74ABT3612-15PQG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FIFO, ensuring reliable performance over time.

Cycle Time: 15 ns

The fast cycle time of 15 ns allows for quick data transfer, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup: 5V

Operating at a standard 5V supply voltage makes integration into existing systems easier and more efficient.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this FIFO can withstand higher temperatures, suitable for industrial environments.

Memory IC Type: BI-DIRECTIONAL FIFO

The bi-directional functionality of this FIFO allows for simultaneous read and write operations, increasing data throughput and efficiency.

Technical Specifications

FIFO SN74ABT3612-15PQG4 attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

10 ns

Maximum Clock Frequency (fCLK):

66.7 MHz

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G132

JESD-609 Code:

e4

Length:

24.13 mm

Memory Density:

2304 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

4

No. of Functions:

1

No. of Terminals:

132

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SPQFP132,1.1SQ

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

FIFOs

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

24.13 mm

Trade Compliance

SN74ABT3612-15PQG4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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