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SN54ACT3632HFP

Texas Instruments

SN54ACT3632HFP by Texas Instruments

SN54ACT3632HFP by Texas Instruments is a 512x36 CMOS FIFO memory IC with 20ns cycle time, operating at 5V. It features synchronous operation, 3-STATE output, and supports a max clock frequency of 50MHz. Ideal for military-grade applications requiring fast data storage and retrieval in parallel mode.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,828 parts In-Stock

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8,828

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Digiode

USA . 814 parts In-Stock

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814

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Distributors (Availability)

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Parana Technologies

USA . 526 parts In-Stock

1+ parts

$4.836

100+ parts

-

1k+ parts

$5.354

10k+ parts

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526

$4.836

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$5.354

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ChromeModa Solutions

Germany . 5,610 parts In-Stock

1+ parts

$5.434

100+ parts

$4.456

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5,610

$5.434

$4.456

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IDEA Electronic Components Group

UK . 1,081 parts In-Stock

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$5.434

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$4.891

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1,081

$5.434

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$4.891

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One Stop Electronics

USA . 735 parts In-Stock

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$14.000

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735

$14.000

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AZTECH Wire

Italy . 573 parts In-Stock

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$17.620

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573

$17.620

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Corphita

USA . 3,016 parts In-Stock

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3,016

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DigiPath Technology Company

USA . 2,291 parts In-Stock

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$4.899

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$4.899

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Microchip USA

USA . 326 parts In-Stock

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Overview

Unlock the power of seamless data transfer with the SN54ACT3632HFP by Texas Instruments. Crafted with precision and expertise, this FIFO device guarantees top-notch quality and reliability. Ideal for a wide range of applications, this product offers unparalleled value with its fast cycle time, synchronous operation, and 3-STATE output characteristics. Whether you're in the military sector or require high-speed memory solutions, this CMOS technology marvel is your go-to choice. Experience the benefits of efficiency and accuracy with the SN54ACT3632HFP - a game-changer in the world of parallel memory ICs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body material provides durability and protection for the components inside, making the product suitable for rugged environments.

Cycle Time: 20 ns

The fast cycle time of 20 ns ensures efficient data processing and quick response times, making it ideal for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise timing and coordination between data inputs and outputs, reducing the risk of errors and ensuring reliable performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, the product can withstand elevated temperatures and is suitable for use in demanding industrial or military environments.

Memory IC Type: BI-DIRECTIONAL FIFO

The bi-directional FIFO memory IC type allows for simultaneous read and write operations, increasing data transfer efficiency and overall system performance.

Technical Specifications

FIFO SN54ACT3632HFP attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

MAILBOX

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-GQFP-F132

JESD-609 Code:

e0

Length:

24.13 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X36

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

QFF

Package Equivalence Code:

QFL132,.95SQ,25

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.81 mm

Sub-Category:

FIFOs

Maximum Supply Current:

.4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN54ACT3632HFP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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