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SN54ABT3614GB

Texas Instruments

SN54ABT3614GB by Texas Instruments

SN54ABT3614GB by Texas Instruments is a FIFO with 128x36 organization, operating at 5V. It features a cycle time of 20ns and operates in synchronous mode. Ideal for military applications due to its MIL-STD temperature range and BICMOS technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,211 parts In-Stock

1+ parts

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4,211

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Vyrian

USA . 3,604 parts In-Stock

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3,604

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 674 parts In-Stock

1+ parts

$2.715

100+ parts

-

1k+ parts

$3.199

10k+ parts

-

674

$2.715

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$3.199

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DigiPath Technology Company

USA . 1,629 parts In-Stock

1+ parts

$2.990

100+ parts

$2.751

1k+ parts

-

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1,629

$2.990

$2.751

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ChromeModa Solutions

Germany . 3,630 parts In-Stock

1+ parts

$3.051

100+ parts

$2.502

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-

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3,630

$3.051

$2.502

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IDEA Electronic Components Group

UK . 1,505 parts In-Stock

1+ parts

$3.051

100+ parts

-

1k+ parts

$2.746

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1,505

$3.051

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$2.746

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AZTECH Wire

Italy . 785 parts In-Stock

1+ parts

$9.104

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785

$9.104

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One Stop Electronics

USA . 1,191 parts In-Stock

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$16.000

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1,191

$16.000

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Corphita

USA . 2,841 parts In-Stock

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2,841

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Overview

Experience superior performance and reliability with the SN54ABT3614GB FIFO by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and cutting-edge technology in all their products. Designed for synchronous operation, this FIFO is perfect for applications requiring fast and efficient data storage and retrieval. With a military-grade temperature range and 3-state output characteristics, the SN54ABT3614GB offers unmatched value and benefits to customers looking for a dependable solution to their FIFO needs. Trust Texas Instruments to deliver excellence in every product.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material provides excellent durability and resistance to harsh environmental conditions, making this FIFO a reliable choice for industrial applications.

Cycle Time: 20 ns

With a fast cycle time of 20 nanoseconds, this FIFO can handle high-speed data processing efficiently, making it suitable for time-critical tasks.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise timing control, which is essential for synchronized data transfer in applications requiring strict timing requirements.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard 5V supply voltage, this FIFO is compatible with a wide range of systems and can be easily integrated into existing setups.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this FIFO can reliably operate in environments with elevated temperatures, ensuring consistent performance under challenging conditions.

Technical Specifications

FIFO SN54ABT3614GB attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Additional Features:

MAILBOX; PARITY GENERATOR/CHECKER

Cycle Time:

20 ns

JESD-30 Code:

S-CPGA-P132

Length:

37.084 mm

Memory Density:

4608 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

128X36

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.21 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Width:

37.084 mm

Trade Compliance

SN54ABT3614GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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