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SN54ACT7811HVR

Texas Instruments

SN54ACT7811HVR by Texas Instruments

SN54ACT7811HVR by Texas Instruments is a 1Kx18 FIFO with synchronous operation and 35.08 ns cycle time. It features a 3-STATE output, operates in parallel mode, and has a memory density of 18432 bits. Ideal for military applications requiring fast data transfer and reliable storage in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 4,190 parts In-Stock

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Vyrian

USA . 2,552 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 151 parts In-Stock

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$4.709

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$5.198

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151

$4.709

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$5.198

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DigiPath Technology Company

USA . 1,652 parts In-Stock

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$5.185

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$4.770

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$4.770

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ChromeModa Solutions

Germany . 6,814 parts In-Stock

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$5.291

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$4.339

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$5.291

$4.339

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IDEA Electronic Components Group

UK . 1,632 parts In-Stock

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$5.291

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$4.762

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AZTECH Wire

Italy . 743 parts In-Stock

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$14.154

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One Stop Electronics

USA . 1,464 parts In-Stock

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$21.000

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Corphita

USA . 2,052 parts In-Stock

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Overview

Experience the reliability and precision of Texas Instruments with the SN54ACT7811HVR FIFO. Designed with top-quality ceramic and glass-sealed materials, this synchronous FIFO offers seamless operation in a compact square package. Ideal for military-grade applications, this 1Kx18 memory device boasts a cycle time of just 35.08 ns, ensuring efficient performance even in extreme temperatures. Benefit from the 3-STATE output characteristics, parallel organization, and 3.86 mm seated height for a versatile solution that delivers unparalleled value and performance to customers.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring reliable performance in various operating conditions.

Cycle Time: 35.08 ns

Fast cycle time allows for quick processing and transfer of data, making the product efficient for FIFO operations.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transmitted and processed at a consistent rate, reducing the risk of data loss or errors.

Minimum Operating Temperature: -55 °C

Wide operating temperature range makes the product suitable for use in extreme environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption, making the product energy-efficient and cost-effective in long-term use.

Technical Specifications

FIFO SN54ACT7811HVR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Cycle Time:

35.08 ns

JESD-30 Code:

S-GQFP-F68

Length:

12.51 mm

Memory Density:

18432 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

68

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

QFF

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.86 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

12.51 mm

Trade Compliance

SN54ACT7811HVR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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