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SN54ACT7881PN

Texas Instruments

SN54ACT7881PN by Texas Instruments

SN54ACT7881PN by Texas Instruments is a FIFO with 1KX18 organization, operating at 5V. It features a cycle time of 20ns, output enable function, and 3-STATE output characteristics. Ideal for military applications due to its temperature grade and CMOS technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,761 parts In-Stock

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Digiode

USA . 644 parts In-Stock

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644

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Distributors (Availability)

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Parana Technologies

USA . 1,047 parts In-Stock

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$2.198

100+ parts

-

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$2.708

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1,047

$2.198

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$2.708

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DigiPath Technology Company

USA . 560 parts In-Stock

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$2.421

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$2.227

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$2.227

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ChromeModa Solutions

Germany . 4,506 parts In-Stock

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$2.470

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$2.025

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$2.470

$2.025

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IDEA Electronic Components Group

UK . 784 parts In-Stock

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$2.470

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$2.223

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784

$2.470

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AZTECH Wire

Italy . 551 parts In-Stock

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$9.896

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551

$9.896

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One Stop Electronics

USA . 1,346 parts In-Stock

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$22.000

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Corphita

USA . 3,900 parts In-Stock

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Overview

Unlock the power of seamless data transfer with the Texas Instruments SN54ACT7881PN FIFO. Manufactured by a trusted leader in semiconductor technology, this FIFO device offers unparalleled reliability and performance. Ideal for a wide range of applications, this product features fast cycle times, synchronous operation, and 3-STATE output characteristics. Its military-grade temperature rating ensures durability in challenging environments. Embrace efficiency and precision with the SN54ACT7881PN, delivering value and benefits that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the internal components of the product, ensuring a longer lifespan.

Cycle Time: 20 ns

Fast cycle time of 20 ns allows for quick data input and output, making this FIFO an efficient choice for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this FIFO compatible with a wide range of systems and power sources.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this FIFO can withstand high heat conditions, ideal for rugged environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this FIFO energy-efficient and reliable for data storage.

Technical Specifications

FIFO SN54ACT7881PN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G80

Length:

12 mm

Memory Density:

18432 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

12 mm

Trade Compliance

SN54ACT7881PN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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